First-Principles Analysis of the Effects of Halogen Variation on the Properties of Lead-Free Novel Perovskites AlGeX3 (X = F, Cl, Br, and I).

To commercialize optoelectronic products and perovskite-based solar cells, nontoxic inorganic cubic metal halide perovskites have gained popularity. This study presents the structural, mechanical, electronic, and optical properties of novel lead-free metal cubic halide perovskites AlGeX3 (X = F, Cl, Br, and I) using the first-principles Density Functional Theory (DFT) approach. The verification of the mechanical stability of all compounds is conducted through Born stability criteria and formation energy. All of the compounds in the elastic investigations exhibit anisotropy, ductility, and elastic stability. The electronic band structures estimated by HSE06 and GGA-PBE functional demonstrate indirect to direct band gap transformation after substituting the halide F with the halides Cl, Br, and I. The tunability of halide-dependent energy bandgaps and the underestimation of energy band gaps are also noticed for the studied compounds by comparing the results obtained from the GGA-PBE functional and HSE06 investigations. The origins of bandgap transformation as well as halide-dependent energy gap modulation are explained by both the partial and total density of states (PDOS and TDOS). The results presented here suggest that all the compounds show low reflectivity, a high absorption coefficient, and also high optical conductivity in the visible and UV regions, making these materials suitable for multijunctional solar cells. Also, these materials have a greater impact on other optoelectronic device applications. Compared to other compounds, the optical investigation reported here demonstrates that AlGeI3 exhibits excellent optical conductivity and absorption in the visible region.

Pressure-induced structural, electronic, optical, and mechanical properties of lead-free GaGeX3 (X = Cl, Br and, I) perovskites: First-principles calculation.

Researchers are now focusing on inorganic halide-based cubic metal perovskites that are not toxic as they strive to commercialize optoelectronic products and solar cells derived from perovskites. This study explores the properties of new lead-free compounds, specifically GaGeX3 (where X = Cl, Br, and I), by executing first-principles Density Functional Theory (DFT) to analyze their optical, electronic, mechanical, and structural characteristics under pressure. Assessing the reliability of all compounds is done meticulously by applying the criteria of Born stability and calculating the formation energy. As discovered through elastic investigations, these materials showed anisotropic behavior, flexibility, and excellent elastic stability. The electronic band structures, calculated using both HSE06 and GGA-PBE functionals at 0 GPa, reveal fascinating behavior. However, computed band structures with non-zero pressures using GGA-PBE. Here, the conduction band moved to the lower energy when the halide Cl was changed with Br or I. In addition, the application of hydrostatic pressure can lead to tunable band gap properties in all compounds such as from 0.779 eV to 0 eV for GaGeCl3, from 0.462 eV to 0 eV for GaGeBr3 and from 0.330 eV to 0 eV for GaGeI3, resulting transformation from semiconductor to metallic. Understanding the origins of bandgap changes can be illuminated by examining the partial and total density of states (PDOS & TDOS). When subjected to pressure, all the studied compounds showed an impactful increase in absorption coefficients and displayed exceptional optical conductivity in both the visible and UV zones. Yet, GaGeCl3 is a more effective UV absorber because it absorbs light more strongly in the UV area. Moreover, GaGeI3 stands out among the compounds examined due to its impressive visible absorption and optical conductivity, which remain consistent under varying pressure conditions. Besides, GaGeI3 exhibits higher reflectivity when subjected to pressure making them suitable for UV shielding applications. At last, these metal cubic halide perovskites without lead present promising opportunities for advancing optoelectronic technologies. With their tunable properties and favorable optical characteristics, these materials are highly sought after for their potential in solar cells, multi-junctional solar cells, and different optoelectronic functions.

Band gap engineering in lead free halide cubic perovskites GaGeX3 (X = Cl, Br, and I) based on first-principles calculations.

Lead-free inorganic Ge-based perovskites GaGeX3 (X = Cl, Br, and I) are promising candidates for solar cell applications due to their structural, mechanical, electrical, and optical properties. In this work, we performed density functional theory (DFT) calculations using the CASTEP module to investigate these properties in detail. We found that the lattice parameters and cell volumes increase with the size of the halogen atoms, and that all the compounds are stable and ductile. GaGeBr3 has the highest ductility, machinability, and lowest hardness, while GaGeCl3 has the highest anisotropy. The band gap values, calculated using the GGA-PBE and HSE06 functionals, show a direct band gap at the R-R point, ranging from 0.779 eV and 1.632 eV for GaGeCl3 to 0.330 eV and 1.140 eV for GaGeI3. The optical properties, such as absorption coefficient, conductivity, reflectivity, refractive index, extinction coefficient, and dielectric function, are also computed and discussed. We observed that the optical properties improve with the redshift of the band gap as Cl is replaced by Br and I. GaGeI3 has the highest dielectric constant, indicating the lowest recombination rate of electron-hole pairs. Our results suggest that GaGeX3 (X = Cl, Br, and I) can be used as effective and non-toxic materials for multijunction solar cells and other semiconductor devices.