Optoelectronic Properties of Tin-Lead Halide Perovskites.

Mixed tin-lead halide perovskites have recently emerged as highly promising materials for efficient single- and multi-junction photovoltaic devices. This Focus Review discusses the optoelectronic properties that underpin this performance, clearly differentiating between intrinsic and defect-mediated mechanisms. We show that from a fundamental perspective, increasing tin fraction may cause increases in attainable charge-carrier mobilities, decreases in exciton binding energies, and potentially a slowing of charge-carrier cooling, all beneficial for photovoltaic applications. We discuss the mechanisms leading to significant bandgap bowing along the tin-lead series, which enables attractive near-infrared bandgaps at intermediate tin content. However, tin-rich stoichiometries still suffer from tin oxidation and vacancy formation which often obscures the fundamentally achievable performance, causing high background hole densities, accelerating charge-carrier recombination, lowering charge-carrier mobilities, and blue-shifting absorption onsets through the Burstein-Moss effect. We evaluate impacts on photovoltaic device performance, and conclude with an outlook on remaining challenges and promising future directions in this area.

Ultrafast Excited-State Localization in Cs2AgBiBr6 Double Perovskite.

Cs2AgBiBr6 is a promising metal halide double perovskite offering the possibility of efficient photovoltaic devices based on lead-free materials. Here, we report on the evolution of photoexcited charge carriers in Cs2AgBiBr6 using a combination of temperature-dependent photoluminescence, absorption and optical pump-terahertz probe spectroscopy. We observe rapid decays in terahertz photoconductivity transients that reveal an ultrafast, barrier-free localization of free carriers on the time scale of 1.0 ps to an intrinsic small polaronic state. While the initially photogenerated delocalized charge carriers show bandlike transport, the self-trapped, small polaronic state exhibits temperature-activated mobilities, allowing the mobilities of both to still exceed 1 cm2 V-1 s-1 at room temperature. Self-trapped charge carriers subsequently diffuse to color centers, causing broad emission that is strongly red-shifted from a direct band edge whose band gap and associated exciton binding energy shrink with increasing temperature in a correlated manner. Overall, our observations suggest that strong electron-phonon coupling in this material induces rapid charge-carrier localization.

Charge-Carrier Trapping Dynamics in Bismuth-Doped Thin Films of MAPbBr3 Perovskite.

Successful chemical doping of metal halide perovskites with small amounts of heterovalent metals has attracted recent research attention because of its potential to improve long-term material stability and tune absorption spectra. However, some additives have been observed to impact negatively on optoelectronic properties, highlighting the importance of understanding charge-carrier behavior in doped metal halide perovskites. Here, we present an investigation of charge-carrier trapping and conduction in films of MAPbBr3 perovskite chemically doped with bismuth. We find that the addition of bismuth has no effect on either the band gap or exciton binding energy of the MAPbBr3 host. However, we observe a substantial enhancement of electron-trapping defects upon bismuth doping, which results in an ultrafast charge-carrier decay component, enhanced infrared emission, and a notable decrease of charge-carrier mobility. We propose that such defects arise from the current approach to Bi-doping through addition of BiBr3, which may enhance the presence of bromide interstitials.

Charge-Carrier Cooling and Polarization Memory Loss in Formamidinium Tin Triiodide.

Reports of slow charge-carrier cooling in hybrid metal halide perovskites have prompted hopes of achieving higher photovoltaic cell voltages through hot-carrier extraction. However, observations of long-lived hot charge carriers even at low photoexcitation densities and an orders-of-magnitude spread in reported cooling times have been challenging to explain. Here we present ultrafast time-resolved photoluminescence measurements on formamidinum tin triiodide, showing fast initial cooling over tens of picoseconds and demonstrating that a perceived secondary regime of slower cooling instead derives from electronic relaxation, state-filling, and recombination in the presence of energetic disorder. We identify limitations of some widely used approaches to determine charge-carrier temperature and make use of an improved model which accounts for the full photoluminescence line shape. Further, we do not find any persistent polarization anisotropy in FASnI3 within 270 fs after excitation, indicating that excited carriers rapidly lose both polarization memory and excess energy through interactions with the perovskite lattice.