Coherent Control of a Few-Channel Hole Type Gatemon Qubit.

Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained using a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junction is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions.

Edge Contacts to Atomically Precise Graphene Nanoribbons.

Bottom-up-synthesized graphene nanoribbons (GNRs) are an emerging class of designer quantum materials that possess superior properties, including atomically controlled uniformity and chemically tunable electronic properties. GNR-based devices are promising candidates for next-generation electronic, spintronic, and thermoelectric applications. However, due to their extremely small size, making electrical contact with GNRs remains a major challenge. Currently, the most commonly used methods are top metallic electrodes and bottom graphene electrodes, but for both, the contact resistance is expected to scale with overlap area. Here, we develop metallic edge contacts to contact nine-atom-wide armchair GNRs (9-AGNRs) after encapsulation in hexagonal boron-nitride (h-BN), resulting in ultrashort contact lengths. We find that charge transport in our devices occurs via two different mechanisms: at low temperatures (9 K), charges flow through single GNRs, resulting in quantum dot (QD) behavior with well-defined Coulomb diamonds (CDs), with addition energies in the range of 16 to 400 meV. For temperatures above 100 K, a combination of temperature-activated hopping and polaron-assisted tunneling takes over, with charges being able to flow through a network of 9-AGNRs across distances significantly exceeding the length of individual GNRs. At room temperature, our short-channel field-effect transistor devices exhibit on/off ratios as high as 3 × 105 with on-state current up to 50 nA at 0.2 V. Moreover, we find that the contact performance of our edge-contact devices is comparable to that of top/bottom contact geometries but with a significantly reduced footprint. Overall, our work demonstrates that 9-AGNRs can be contacted at their ends in ultra-short-channel FET devices while being encapsulated in h-BN.

Current-Phase Relation of a WTe2 Josephson Junction.

When a topological insulator is incorporated into a Josephson junction, the system is predicted to reveal the fractional Josephson effect with a 4π-periodic current-phase relation. Here, we report the measurement of a 4π-periodic switching current through an asymmetric SQUID, formed by the higher-order topological insulator WTe2. Contrary to the established opinion, we show that a high asymmetry in critical current and negligible loop inductance are not sufficient by themselves to reliably measure the current-phase relation. Instead, we find that our measurement is heavily influenced by additional inductances originating from the self-formed PdTex inside the junction. We therefore develop a method to numerically recover the current-phase relation of the system and find the 1.5 µm long junction to be best described in the short ballistic limit. Our results highlight the complexity of subtle inductance effects that can give rise to misleading topological signatures in transport measurements.

Origin of Subgap States in Normal-Insulator-Superconductor van der Waals Heterostructures.

Superconductivity in van der Waals materials, such as NbSe2 and TaS2, is fundamentally novel due to the effects of dimensionality, crystal symmetries, and strong spin-orbit coupling. In this work, we perform tunnel spectroscopy on NbSe2 by utilizing MoS2 or hexagonal boron nitride (hBN) as a tunnel barrier. We observe subgap excitations and probe their origin by studying various heterostructure designs. We show that the edge of NbSe2 hosts many defect states, which strongly couple to the superconductor and form Andreev bound states. Furthermore, by isolating the NbSe2 edge we show that the subgap states are ubiquitous in MoS2 tunnel barriers but absent in hBN tunnel barriers, suggesting defects in MoS2 as their origin. Their magnetic nature reveals a singlet- or a doublet-type ground state, and based on nearly vanishing g factors or avoided crossings of subgap excitations, we highlight the role of strong spin-orbit coupling.

Spin cross-correlation experiments in an electron entangler.

Correlations are fundamental in describing many-body systems. However, in experiments, correlations are notoriously difficult to assess on a microscopic scale, especially for electron spins. Even though it is firmly established theoretically that the electrons in a Cooper pair1 of a superconductor form maximally spin-entangled singlet states with opposite spin projections2-4, no spin correlation experiments have been demonstrated so far. Here we report the direct measurement of the spin cross-correlations between the currents of a Cooper pair splitter5-13, an electronic device that emits electrons originating from Cooper pairs. We use ferromagnetic split-gates14,15, compatible with nearby superconducting structures, to individually spin polarize the transmissions of the quantum dots in the two electronic paths, which act as tunable spin filters. The signals are detected in standard transport and in highly sensitive transconductance experiments. We find that the spin cross-correlation is negative, consistent with spin singlet emission, and deviates from the ideal value mostly due to the overlap of the Zeeman split quantum dot states. Our results demonstrate a new route to perform spin correlation experiments in nano-electronic devices, especially suitable for those relying on magnetic field sensitive superconducting elements, like triplet or topologically non-trivial superconductors16-18, or to perform Bell tests with massive particles19,20.

Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots.

We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 µm lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.

Superconducting Contacts to a Monolayer Semiconductor.

We demonstrate superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS2), a layered semiconductor with highly relevant electronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS2 regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction-dependent gap characteristics, suggesting a superconducting proximity effect. Magnetoresistance measurements show that the bandstructure and the high intrinsic carrier mobility remain intact in the bulk of the MoS2. This type of VIA contact is applicable to a large variety of layered materials and superconducting contacts, opening up a path to monolayer semiconductors as a platform for superconducting hybrid devices.

Compact SQUID Realized in a Double-Layer Graphene Heterostructure.

2D systems that host 1D helical states are advantageous from the perspective of scalable topological quantum computation when coupled to a superconductor. Graphene is particularly promising for its high electronic quality, its versatility in van der Waals heterostructures, and its electron- and hole-like degenerate 0th Landau level. Here we study a compact double-layer graphene SQUID (superconducting quantum interference device), where the superconducting loop is reduced to the superconducting contacts connecting two parallel graphene Josephson junctions. Despite the small size of the SQUID, it is fully tunable by the independent gate control of the chemical potentials in both layers. Furthermore, both Josephson junctions show a skewed current-phase relationship, indicating the presence of superconducting modes with high transparency. In the quantum Hall regime, we measure a well-defined conductance plateau of 2e2/h indicative of counter-propagating edge channels in the two layers.

Magnetic-Field-Independent Subgap States in Hybrid Rashba Nanowires.

Subgap states in semiconducting-superconducting nanowire hybrid devices are controversially discussed as potential topologically nontrivial quantum states. One source of ambiguity is the lack of an energetically and spatially well defined tunnel spectrometer. Here, we use quantum dots directly integrated into the nanowire during the growth process to perform tunnel spectroscopy of discrete subgap states in a long nanowire segment. In addition to subgap states with a standard magnetic field dependence, we find topologically trivial subgap states that are independent of the external magnetic field, i.e., that are pinned to a constant energy as a function of field. We explain this effect qualitatively and quantitatively by taking into account the strong spin-orbit interaction in the nanowire, which can lead to a decoupling of Andreev bound states from the field due to a spatial spin texture of the confined eigenstates. This result constitutes an important step forward in the research on superconducting subgap states in nanowires, such as Majorana bound states.

Mobility Enhancement in Graphene by in situ Reduction of Random Strain Fluctuations.

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When ∼0.2% of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by ∼35% is observed while the residual doping reduces by ∼39%. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.

One-Dimensional Edge Transport in Few-Layer WTe2.

WTe2 is a layered transitional-metal dichalcogenide (TMD) with a number of intriguing topological properties. Recently, WTe2 has been predicted to be a higher-order topological insulator (HOTI) with topologically protected hinge states along the edges. The gapless nature of WTe2 complicates the observation of one-dimensional (1D) topological states in transport due to their small contribution relative to the bulk. Here, we study the behavior of the Josephson effect in magnetic field to distinguish edge from bulk transport. The Josephson effect in few-layer WTe2 reveals 1D states residing on the edges and steps. Moreover, our data demonstrates a combination of Josephson transport properties observed solely in another HOTI-bismuth, including Josephson transport over micrometer distances, extreme robustness in a magnetic field, and nonsinusoidal current-phase relation (CPR). Our observations strongly suggest the topological origin of the 1D states and that few-layer WTe2 is a HOTI.

Large spatial extension of the zero-energy Yu-Shiba-Rusinov state in a magnetic field.

Various promising qubit concepts have been put forward recently based on engineered superconductor subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a superconductor strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a superconductor. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy measurements. Moreover, we demonstrate that its spatial extension increases substantially in a magnetic field.

Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires.

We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd3As2 nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire. In these regimes, the device shows quantum dot behavior, whereas the device exhibits conductance plateaus in the n-n regime at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots.

We present a comprehensive electrical characterization of an InAs/InP nanowire (NW) heterostructure, comprising of two InP barriers forming a quantum dot (QD), two adjacent lead segments and two metallic contacts. We demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 µeV to >600 µeV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ∼350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs NWs, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

In Situ Strain Tuning in hBN-Encapsulated Graphene Electronic Devices.

Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the exceptional quality of pristine graphene for transport experiments. In addition, the on-substrate approach allows one to exploit strain effects in the full range of possible sample geometries and at the same time guarantees that changes in the gate capacitance remain negligible during the deformation process. We use Raman spectroscopy to spatially map the strain magnitude in devices with two different geometries and demonstrate the possibility to engineer a strain gradient, which is relevant for accessing the valley degree of freedom with pseudomagnetic fields. Comparing the transport characteristics of a suspended device with those of an on-substrate device, we demonstrate that our new approach does not suffer from the ambiguities encountered in suspended devices.

New Generation of Moiré Superlattices in Doubly Aligned hBN/Graphene/hBN Heterostructures.

The specific rotational alignment of two-dimensional lattices results in a moiré superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport signatures of such superlattices have been reported for graphene/hBN and graphene/graphene systems. Here we report moiré superlattices in fully hBN encapsulated graphene with both the top and the bottom hBN aligned to the graphene. In the graphene, two different moiré superlattices form with the top and the bottom hBN, respectively. The overlay of the two superlattices can result in a third superlattice with a period larger than the maximum period (14 nm) in the graphene/hBN system, which we explain in a simple model. This new type of band structure engineering allows one to artificially create an even wider spectrum of electronic properties in two-dimensional materials.

GHz nanomechanical resonator in an ultraclean suspended graphene p-n junction.

We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. In a graphene membrane with high built-in tension, but still of macroscopic size with dimensions 3 × 1 µm2, a record resonance frequency of 1.17 GHz is observed after the final current annealing step. We further compare the resonance response measured in the unipolar with the one in the bipolar regime. Remarkably, the resonant signals are strongly enhanced in the bipolar regime.

Charge transport in a single molecule transistor probed by scanning tunneling microscopy.

We report on the scanning tunneling microscopy/spectroscopy (STM/STS) study of cobalt phthalocyanine (CoPc) molecules deposited onto a back-gated graphene device. We observe a clear gate voltage (Vg) dependence of the energy position of the features originating from the molecular states. Based on the analysis of the energy shifts of the molecular features upon tuning Vg, we are able to determine the nature of the electronic states that lead to a gapped differential conductance. Our measurements show that capacitive couplings of comparable strengths exist between the CoPc molecule and the STM tip as well as between CoPc and graphene, thus facilitating electronic transport involving only unoccupied molecular states for both tunneling bias polarities. These findings provide novel information on the interaction between graphene and organic molecules and are of importance for further studies, which envisage the realization of single molecule transistors with non-metallic electrodes.

Quantum-Confined Stark Effect in a MoS2 Monolayer van der Waals Heterostructure.

The optics of dangling-bond-free van der Waals heterostructures containing transition metal dichalcogenides are dominated by excitons. A crucial property of a confined exciton is the quantum confined Stark effect (QCSE). Here, such a heterostructure is used to probe the QCSE by applying a uniform vertical electric field across a molybdenum disulfide (MoS2) monolayer. The photoluminescence emission energies of the neutral and charged excitons shift quadratically with the applied electric field, provided that the electron density remains constant, demonstrating that the exciton can be polarized. Stark shifts corresponding to about half the homogeneous linewidth were achieved. Neutral and charged exciton polarizabilities of (7.8 ± 1.0) × 10-10 and (6.4 ± 0.9) × 10-10 D m V-1 at relatively low electron density (∼1012 cm-2) have been extracted, respectively. These values are one order of magnitude lower than the previously reported values but in line with theoretical calculations. The methodology presented here is versatile and can be applied to other semiconducting layered materials.