Nonequilibrium Dynamics of Electron Emission from Cold and Hot Graphene under Proton Irradiation.

Characteristic properties of secondary electrons emitted from irradiated two-dimensional materials arise from multi-length and multi-time-scale relaxation processes that connect the initial nonequilibrium excited electron distribution with their eventual emission. To understand these processes, which are critical for using secondary electrons as high-resolution thermalization probes, we combine first-principles real-time electron dynamics with irradiation experiments. Our data for cold and hot proton-irradiated graphene show signatures of kinetic and potential emission and generally good agreement for electron yields between experiment and theory. The duration of the emission pulse is about 1.5 fs, which indicates high time resolution when used as a probe. Our newly developed method to predict kinetic energy spectra shows good agreement with electron and ion irradiation experiments and prior models. We find that the lattice temperature significantly increases secondary electron emission, whereas electron temperature has a negligible effect.

Identifying native point defect configurations inα-alumina.

Intimately intertwined atomic and electronic structures of point defects govern diffusion-limited corrosion and underpin the operation of optoelectronic devices. For some materials, complex energy landscapes containing metastable defect configurations challenge first-principles modeling efforts. Here, we thoroughly reevaluate native point defect geometries for the illustrative case ofα-Al2O3by comparing three methods for sampling candidate geometries in density functional theory calculations: displacing atoms near a naively placed defect, initializing interstitials at high-symmetry points of a Voronoi decomposition, and Bayesian optimization. We find symmetry-breaking distortions for oxygen vacancies in some charge states, and we identify several distinct oxygen split-interstitial geometries that help explain literature discrepancies involving this defect. We also report a surprising and, to our knowledge, previously unknown trigonal geometry favored by aluminum interstitials in some charge states. These new configurations may have transformative impacts on our understanding of defect migration pathways in aluminum-oxide scales protecting metal alloys from corrosion. Overall, the Voronoi scheme appears most effective for sampling candidate interstitial sites because it always succeeded in finding the lowest-energy geometry identified in this study, although no approach found every metastable configuration. Finally, we show that the position of defect levels within the band gap can depend strongly on the defect geometry, underscoring the need to conduct careful searches for ground-state geometries in defect calculations.

Bend-Induced Ferroelectric Domain Walls in α-In2Se3.

The low bending stiffness of atomic membranes from van der Waals ferroelectrics such as α-In2Se3 allow access to a regime of strong coupling between electrical polarization and mechanical deformation at extremely high strain gradients and nanoscale curvatures. Here, we investigate the atomic structure and polarization at bends in multilayer α-In2Se3 at high curvatures down to 0.3 nm utilizing atomic-resolution scanning transmission electron microscopy, density functional theory, and piezoelectric force microscopy. We find that bent α-In2Se3 produces two classes of structures: arcs, which form at bending angles below ∼33°, and kinks, which form above ∼33°. While arcs preserve the original polarization of the material, kinks contain ferroelectric domain walls that reverse the out-of-plane polarization. We show that these kinks stabilize ferroelectric domains that can be extremely small, down to 2 atoms or ∼4 Å wide at their narrowest point. Using DFT modeling and the theory of geometrically necessary disclinations, we derive conditions for the formation of kink-induced ferroelectric domain boundaries. Finally, we demonstrate direct control over the ferroelectric polarization using templated substrates to induce patterned micro- and nanoscale ferroelectric domains with alternating polarization. Our results describe the electromechanical coupling of α-In2Se3 at the highest limits of curvature and demonstrate a strategy for nanoscale ferroelectric domain patterning.

Angstrom-scale imaging of magnetization in antiferromagnetic Fe2As via 4D-STEM.

We demonstrate a combination of computational tools and experimental 4D-STEM methods to image the local magnetic moment in antiferromagnetic Fe2As with 6 angstrom spatial resolution. Our techniques utilize magnetic diffraction peaks, common in antiferromagnetic materials, to create imaging modes that directly visualize the magnetic lattice. Using this approach, we show that center-of-mass analysis can determine the local magnetization component in the plane perpendicular to the path of the electron beam. Moreover, we develop Magnstem, a quantum mechanical electron scattering simulation code, to model electron scattering of an angstrom-scale probe from magnetic materials. Using these tools, we identify optimal experimental conditions for separating weak magnetic signals from the much stronger interactions of an angstrom-scale probe with electrostatic potentials. Our techniques should be useful for characterizing the local magnetic order in systems such in thin films, interfaces, and domain boundaries of antiferromagnetic materials, which are difficult to probe with existing methods.

Carrier-Specific Hot Phonon Bottleneck in CH3NH3PbI3 Revealed by Femtosecond XUV Absorption.

Femtosecond carrier cooling in the organohalide perovskite semiconductor CH3NH3PbI3 is measured using extreme ultraviolet (XUV) and optical transient absorption spectroscopy. XUV absorption between 44 and 58 eV measures transitions from the I 4d core to the valence and conduction bands and gives distinct signals for hole and electron dynamics. The core-to-valence-band signal directly maps the photoexcited hole distribution and provides a quantitative measurement of the hole temperature. The combination of XUV and optical probes reveals that upon excitation at 400 nm, the initial hole distribution is 3.5 times hotter than the electron distribution. At an initial carrier density of 1.4 × 1020 cm-3 both carriers are subject to a hot phonon bottleneck, but at 4.2 × 1019 cm-3 the holes cool to less than 1000 K within 400 fs. This result places significant constraints on the use of organohalide perovskites in hot-carrier photovoltaics.

Real-Time Exciton Dynamics with Time-Dependent Density-Functional Theory.

Linear-response time-dependent density-functional theory (TDDFT) can describe excitonic features in the optical spectra of insulators and semiconductors, using exchange-correlation (xc) kernels behaving as -1/k^{2} to leading order. We show how excitons can be modeled in real-time TDDFT, using an xc vector potential constructed from approximate, long-range corrected xc kernels. We demonstrate, for various materials, that this real-time approach is consistent with frequency-dependent linear response, gives access to femtosecond exciton dynamics following short-pulse excitations, and can be extended with some caution into the nonlinear regime.

Anomalous Stopping and Charge Transfer in Proton-Irradiated Graphene.

We use first-principles calculations to uncover and explain a new type of anomalous low-velocity stopping effect in proton-irradiated graphene. We attribute a shoulder feature that occurs exclusively for channeling protons to enhanced electron capture from σ- and π-orbitals. Our analysis of electron emission indicates that backward emission is more sensitive to proton trajectory than forward emission and could thus produce higher contrast images in ion microscopy. For slow protons, we observe a steep drop in emission, consistent with predictions from analytical models.

Deep Learning Enabled Strain Mapping of Single-Atom Defects in Two-Dimensional Transition Metal Dichalcogenides with Sub-Picometer Precision.

Two-dimensional (2D) materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so far limited electron microscopy methods to probe these atomic-scale strain fields. Here, we demonstrate an approach to probe single-atom defects with sub-picometer precision in a monolayer 2D transition metal dichalcogenide, WSe2-2xTe2x. We utilize deep learning to mine large data sets of aberration-corrected scanning transmission electron microscopy images to locate and classify point defects. By combining hundreds of images of nominally identical defects, we generate high signal-to-noise class averages which allow us to measure 2D atomic spacings with up to 0.2 pm precision. Our methods reveal that Se vacancies introduce complex, oscillating strain fields in the WSe2-2xTe2x lattice that correspond to alternating rings of lattice expansion and contraction. These results indicate the potential impact of computer vision for the development of high-precision electron microscopy methods for beam-sensitive materials.

Tuning Electronic Structure in Layered Hybrid Perovskites with Organic Spacer Substitution.

Two-dimensional layered halide organic perovskites (LHOPs) are promising candidates for many optoelectronic applications due to their interesting tunable properties. They provide a unique opportunity to control energy and charge dynamics via the independent tunability of the energy levels within the perovskite and the organic spacer for various optoelectronic applications. In the perovskite layer alone, one can replace the Pb (Sn), the halide (X = I, Br, Cl), the organic component, and the number of layers between the organic spacer layers. In addition, there are many possibilities for organic spacer layers between the perovskite layers, making it difficult for experimental methods to comprehensively explore such an extensive combinatorial space. Of particular technological interest is alignment of electronic levels between the perovskite layer and the organic spacer layer, leading to desired transfer of energy or charge carriers between perovskite and organic components. For example, as band edge absorption is almost entirely attributed to the perovskite layer, one way to demonstrate energy transfer is to observe triplet emission from organic spacers. State-of-the-art computational chemistry tools can be used to predict the properties of many stoichiometries in search for LHOPs that have the most promising electronic-structure features. In this first-principles study, we survey a group of π-conjugated organic spacer candidates for use in triplet light-emitting LHOPs. Utilizing density functional theory (DFT) and time-dependent DFT, we calculate the first singlet (S1) and triplet (T1) excitation energy in the ground-state geometry and the first triplet excitation energy in the excited-triplet-state relaxed geometry (T1*). By comparing these energies to the known lowest exciton energy level of PbnX3n+1 perovskite layers (X = I, Br, Cl), we can identify organic spacer and perovskite layer pairings for possible transfer of Wannier excitons from the inorganic perovskite lattice to spin-triplet Frenkel excitons located on the organic cation. We successfully identify ten organic spacer candidates for possible pairing with perovskite layers of specific halide composition to achieve triplet light emission across the visible energy range. Molecular dynamics simulations predict that finite temperatures and perovskite environment have little influence on the average excitation energies of the two common organic spacers naphthylethylammonium (NEA) and phenelethylammonium (PEA). We find significant thermal broadening up to 0.5 eV of the optical excitation energies appearing due to finite temperature effects. The findings herein provide insights into alignment of electronic levels of the conjugated organic spacer with the layer.

Revealing the Sequence-Structure-Electronic Property Relation of Self-Assembling π-Conjugated Oligopeptides by Molecular and Quantum Mechanical Modeling.

Self-assembled nanoaggregates of π-conjugated synthetic peptides present a biocompatible and highly tunable alternative to silicon-based optical and electronic materials. Understanding the relationship between structural morphology and electronic properties of these assemblies is critical for understanding and controlling their mechanical, optical, and electronic responses. In this work, we combine all-atom classical molecular simulations with quantum mechanical electronic structure calculations to ascertain the sequence-structure-electronic property relationship within a family of Asp-X-X-quaterthiophene-X-X-Asp (DXX-OT4-XXD) oligopeptides in which X is one of the five amino acids {Ala, Phe, Gly, Ile, Val} ({A, F, G, I, V}). Molecular dynamics simulations reveal that smaller amino acid substituents (A, G) favor linear stacking within a peptide dimer, whereas larger groups (F, I, V) induce larger twist angles between the peptides. Density functional theory calculations on the dimer show the absorption spectrum to be dominated by transitions between carbon and sulfur p orbitals. Although the absorption spectrum is largely insensitive to the relative twist angle, the highest occupied molecular orbital strongly localizes onto one molecule within the dimer at large twist angles, impeding the efficiency of transport between molecules. Our results provide a fundamental understanding of the relation between peptide orientation and electronic structure and offer design precepts for rational engineering of these systems.

Hot-Electron-Mediated Ion Diffusion in Semiconductors for Ion-Beam Nanostructuring.

Ion-beam-based techniques are widely utilized to synthesize, modify, and characterize materials at the nanoscale, with applications from the semiconductor industry to medicine. Interactions of the beam with the target are fundamentally interesting, as they trigger multilength and time-scale processes that need to be quantitatively understood to achieve nanoscale precision. Here we demonstrate for magnesium oxide, as a testbed semiconductor material, that in a kinetic-energy regime in which electronic effects are usually neglected, a proton beam efficiently excites oxygen-vacancy-related electrons. We quantitatively describe the excited-electron distribution and the emerging ion dynamics using first-principles techniques. Contrary to the common picture of charging the defect, we discover that most of the excited electrons remain locally near the oxygen vacancy. Using these results, we bridge time scales from ultrafast electron dynamics directly after impact to ion diffusion over migration barriers in semiconductors and discover a diffusion mechanism that is mediated by hot electrons. Our quantitative simulations predict that this mechanism strongly depends on the projectile-ion velocity, suggesting the possibility of using it for precise sample manipulation via nanoscale diffusion enhancement in semiconductors with a deep, neutral, intrinsic defect.

Optical determination of crystal phase in semiconductor nanocrystals.

Optical, electronic and structural properties of nanocrystals fundamentally derive from crystal phase. This is especially important for polymorphic II-VI, III-V and I-III-VI2 semiconductor materials such as cadmium selenide, which exist as two stable phases, cubic and hexagonal, each with distinct properties. However, standard crystallographic characterization through diffraction yields ambiguous phase signatures when nanocrystals are small or polytypic. Moreover, diffraction methods are low-throughput, incompatible with solution samples and require large sample quantities. Here we report the identification of unambiguous optical signatures of cubic and hexagonal phases in II-VI nanocrystals using absorption spectroscopy and first-principles electronic-structure theory. High-energy spectral features allow rapid identification of phase, even in small nanocrystals (∼2 nm), and may help predict polytypic nanocrystals from differential phase contributions. These theoretical and experimental insights provide simple and accurate optical crystallographic analysis for liquid-dispersed nanomaterials, to improve the precision of nanocrystal engineering and improve our understanding of nanocrystal reactions.

Optical-helicity-driven magnetization dynamics in metallic ferromagnets.

Recent observations of switching of magnetic domains in ferromagnetic metals by circularly polarized light, so-called all-optical helicity dependent switching, has renewed interest in the physics that governs the interactions between the angular momentum of photons and the magnetic order parameter of materials. Here we use time-resolved-vectorial measurements of magnetization dynamics of thin layers of Fe, Ni and Co driven by picosecond duration pulses of circularly polarized light. We decompose the torques that drive the magnetization into field-like and spin-transfer components that we attribute to the inverse Faraday effect and optical spin-transfer torque, respectively. The inverse Faraday effect is approximately the same in Fe, Ni and Co, but the optical spin-transfer torque is strongly enhanced by adding a Pt capping layer. Our work provides quantitative data for testing theories of light-material interactions in metallic ferromagnets and multilayers.

Structural, Electronic, and Optical Properties of K2Sn3O7 with an Offset Hollandite Structure.

We present the compound K2Sn3O7, a Sn4+-containing oxide with a unique structure type among oxides. The compound is orthorhombic and reminiscent of an offset hollandite, where open channels hold a row of four K+ per channel per cell. UV-visible spectroscopy indicates a wide band gap semiconductor, which is confirmed by first-principles electronic-structure calculations of band structures, densities of states, and optical properties. The continued discovery of new structure types in ternary tin oxides should remain a priority for the identification of prospective ion conductors and transparent conducting compounds.

Quantum Dot Surface Engineering: Toward Inert Fluorophores with Compact Size and Bright, Stable Emission.

The surfaces of colloidal nanocrystals are complex interfaces between solid crystals, coordinating ligands, and liquid solutions. For fluorescent quantum dots, the properties of the surface vastly influence the efficiency of light emission, stability, and physical interactions, and thus determine their sensitivity and specificity when they are used to detect and image biological molecules. But after more than 30 years of study, the surfaces of quantum dots remain poorly understood and continue to be an important subject of both experimental and theoretical research. In this article, we review the physics and chemistry of quantum dot surfaces and describe approaches to engineer optimal fluorescent probes for applications in biomolecular imaging and sensing. We describe the structure and electronic properties of crystalline facets, the chemistry of ligand coordination, and the impact of ligands on optical properties. We further describe recent advances in compact coatings that have significantly improved their properties by providing small hydrodynamic size, high stability and fluorescence efficiency, and minimal nonspecific interactions with cells and biological molecules. While major progress has been made in both basic and applied research, many questions remain in the chemistry and physics of quantum dot surfaces that have hindered key breakthroughs to fully optimize their properties.

Role of Surface Termination on Hot Electron Relaxation in Silicon Quantum Dots: A First-Principles Dynamics Simulation Study.

The role of surface termination on phonon-mediated relaxation of an excited electron in quantum dots was investigated using first-principles simulations. The surface terminations of a silicon quantum dot with hydrogen and fluorine atoms lead to distinctively different relaxation behaviors, and the fluorine termination shows a nontrivial relaxation process. The quantum confined electronic states are significantly affected by the surface of the quantum dot, and we find that a particular electronic state dictates the relaxation behavior through its infrequent coupling to neighboring electronic states. Dynamical fluctuation of this electronic state results in a slow shuttling behavior within the manifold of unoccupied electronic states, controlling the overall dynamics of the excited electron with its characteristic frequency of this shuttling behavior. The present work revealed a unique role of surface termination, dictating the hot electron relaxation process in quantum-confined systems in the way that has not been considered previously.

Plane-wave pseudopotential implementation of explicit integrators for time-dependent Kohn-Sham equations in large-scale simulations.

Explicit integrators for real-time propagation of time-dependent Kohn-Sham equations are compared regarding their suitability for performing large-scale simulations. Four algorithms are implemented and assessed for both stability and accuracy within a plane-wave pseudopotential framework, employing the adiabatic approximation to the exchange-correlation functional. Simulation results for a single sodium atom and a sodium atom embedded in bulk magnesium oxide are discussed. While the first-order Euler scheme and the second-order finite-difference scheme are unstable, the fourth-order Runge-Kutta scheme is found to be conditionally stable and accurate within this framework. Excellent parallel scalability of the algorithm up to more than a thousand processors is demonstrated for a system containing hundreds of electrons, evidencing the suitability for large-scale simulations based on real-time propagation of time-dependent Kohn-Sham equations.

First-principles optical spectra for F centers in MgO.

The study of the oxygen vacancy (F center) in MgO has been aggravated by the fact that the positively charged and the neutral vacancy (F+ and F0, respectively) absorb at practically identical energies. Here we apply many-body perturbation theory in the G0W0 approximation and the Bethe-Salpeter approach to calculate the optical absorption and emission spectrum of the oxygen vacancy in all three charge states. We observe unprecedented agreement between the calculated and the experimental optical absorption spectra for the F0 and F+ center. Our calculations reveal that not only the absorption but also the emission spectra of different charge states peak at nearly the same energy, which leads to a reinterpretation of the F center's optical properties.