Interfacial Tuning of Anisotropic Gilbert Damping.

Tuning of the anisotropic Gilbert damping Δα has been realized in ultrathin single-crystalline Fe films grown on GaAs (001). A nonmonotonic dependence of Δα on film thickness t is observed upon varying t about 10 ML (∼1.4 nm). Δα increases for 16 ML>t>8.5 ML, and then decreases for 8.5 ML>t>6.5 ML accompanied by a sign reversal of Δα for t=6.5 ML. The sign reversal of Δα is captured by first-principle calculations, which show that the anisotropic density of states changes sign upon decreasing t. Moreover, t^{-1} dependence of the anisotropic damping indicates the emergence of an anisotropic effective spin mixing conductance according to the theory of spin pumping. The results establish new opportunities for controlling the Gilbert damping and for fundamental studies of magnetization dynamics in reduced dimension.

Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature.

Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate-due to strong spin-orbit interaction-spin currents via the spin Hall effect and induce a torque at the interface to the ferromagnet. Here we report the observation of robust SOT occuring at a single crystalline Fe/GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation.

Anisotropic Polar Magneto-Optic Kerr Effect of Ultrathin Fe/GaAs(001) Layers due to Interfacial Spin-Orbit Interaction.

We report the observation of the anisotropic polar magneto-optical Kerr effect in thin layers of epitaxial Fe/GaAs(001) at room temperature. A clear twofold symmetry of the Kerr rotation angle depending on the orientation of the linear polarization of the probing laser beam with respect to the crystallographic directions of the sample is detected for ultrathin magnetic films saturated out of the film plane. The amplitude of the anisotropy decreases with increasing Fe film thickness, suggesting that the interfacial region is the origin of the anisotropy. The twofold symmetry is fully reproduced by model calculations based on an interference of interfacial Bychkov-Rashba and Dresselhaus spin-orbit coupling.

Electrical spin injection into high mobility 2D systems.

We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would require the spin polarization of the injected current to be much larger than 100%, which is unphysical. A strong correlation of the spin signal with contact width and electron mean free path suggests that ballistic transport in the 2D region below ferromagnetic contacts should be taken into account to fully describe the results.

Characterization of qubit dephasing by Landau-Zener-Stückelberg-Majorana interferometry.

Controlling coherent interaction at avoided crossings and the dynamics there is at the heart of quantum information processing. A particularly intriguing dynamics is observed in the Landau-Zener regime, where periodic passages through the avoided crossing result in an interference pattern carrying information about qubit properties. In this Letter, we demonstrate a straightforward method, based on steady-state experiments, to obtain all relevant information about a qubit, including complex environmental influences. We use a two-electron charge qubit defined in a lateral double quantum dot as test system and demonstrate a long coherence time of T2 ≃ 200 ns, which is limited by electron-phonon interaction.

Transmission-grating-photomasked transient spin grating and its application to measurement of electron-spin ambipolar diffusion in (110) GaAs quantum wells.

A circular dichromatic transient absorption difference spectroscopy of transmission-grating-photomasked transient spin grating is developed and formularized. It is very simple in experimental setup and operation, and has high detection sensitivity. It is applied to measure spin diffusion dynamics and excited electron density dependence of spin ambipolar diffusion coefficient in (110) GaAs quantum wells. It is found that the spin ambipolar diffusion coefficient of (110) and (001) GaAs quantum wells is close to each other, but has an opposite dependence tendency on excited electron density. This spectroscopy is expected to have extensive applicability in the measurement of spin transport.

Ultrastrong coupling of the cyclotron transition of a 2D electron gas to a THz metamaterial.

Artificial cavity photon resonators with ultrastrong light-matter interactions are attracting interest both in semiconductor and superconducting systems because of the possibility of manipulating the cavity quantum electrodynamic ground state with controllable physical properties. We report here experiments showing ultrastrong light-matter coupling in a terahertz (THz) metamaterial where the cyclotron transition of a high-mobility two-dimensional electron gas (2DEG) is coupled to the photonic modes of an array of electronic split-ring resonators. We observe a normalized coupling ratio, Ω/ω(c) = 0.58, between the vacuum Rabi frequency, Ω, and the cyclotron frequency, ω(c). Our system appears to be scalable in frequency and could be brought to the microwave spectral range with the potential of strongly controlling the magnetotransport properties of a high-mobility 2DEG.

Fingerprints of the anisotropic spin-split hole dispersion in resonant inelastic light scattering in two-dimensional hole systems.

In resonant inelastic light scattering experiments on two-dimensional hole systems in GaAs-Al(x)Ga(1-x)As single quantum wells we find evidence for the strongly anisotropic spin-split hole dispersion at finite in-plane momenta. In all our samples we detect a low-energy spin-density excitation of a few meV, stemming from excitation of holes of the spin-split ground state. The detailed spectral shape of the excitation depends sensitively on the orientations of the linear light polarizations with respect to the in-plane crystal axes. In particular, we observe a doublet structure, which is most pronounced if the polarization of the incident light is parallel to the [110] in-plane direction. Theoretical calculations of the Raman spectra based on a multiband k · p approach confirm that the observed doublet structure is due to the anisotropic spin-split hole dispersion.

Proximity induced enhancement of the Curie temperature in hybrid spin injection devices.

We investigate the increase of the Curie temperature T(C) in a lateral spin injection geometry where the ferromagnetic (Ga,Mn)As injector and detector contacts are capped by a thin iron film. Because of interlayer coupling between Fe and (Ga,Mn)As T(C) gets enhanced by nearly 100% for the thinnest (Ga,Mn)As films. The use of the proximity effect might pave the way for practical implementation of spintronic devices.

Determination of energy scales in few-electron double quantum dots.

The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately, this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays.

Density enhanced diffusion of dipolar excitons within a one-dimensional channel.

We experimentally investigate the lateral diffusion of dipolar excitons in coupled quantum wells in two (2D) and one (1D) dimensions. In 2D, the exciton expansion obeys nonlinear temporal dynamics due to the repulsive dipole pressure at a high exciton density, in accordance with recent reports. In contrast, the observed 1D expansion behaves linearly in time even at high exciton densities. The corresponding 1D diffusion coefficient exceeds the one in 2D by far and depends linearly on the exciton density. We attribute the findings to screening of quantum well disorder by the dipolar excitons.

Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential.

We report on the observation of the Seebeck ratchet effect. The effect is measured in semiconductor heterostructures with a one-dimensional lateral potential excited by terahertz radiation. The photocurrent generation is based on the combined action of a spatially periodic in-plane potential and a spatially modulated light, which gives rise to a modulation of the local temperature. In addition to the polarization-independent current due to the Seebeck ratchet effect, we observe a photon helicity dependent response and propose a microscopic mechanism to interpret the experimental findings.

Symmetry and spin dephasing in (110)-grown quantum wells.

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal; therefore, these structures set the upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer positions.

Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures.

Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon interaction.

Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions.

We report the observation of tunneling anisotropic magnetoresistance effect in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed twofold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

Dispersion of the composite-fermion cyclotron-resonance mode.

The dispersion of the composite-fermion cyclotron-resonance mode is measured with an optical detection scheme under the combined excitation of microwave radiation and a surface acoustic wave from an interdigital transducer. The slowly traveling surface wave defines the transferred wave vector. Momenta up to 10;{8} m;{-1} are accessible. The cyclotron-resonance mode exhibits strong negative dispersion, which suggests predominant short range residual interaction among composite fermions. From an extrapolation, the cyclotron mass at k=0 is obtained and investigated as a function of electron density.

Direct observation of controlled coupling in an individual quantum dot molecule.

We report the direct observation of quantum coupling in individual quantum dot molecules and its manipulation using static electric fields. A pronounced anticrossing of different excitonic transitions is observed as the electric field is tuned. A comparison of our experimental results with theory shows that the observed anticrossing occurs between excitons with predominant spatially direct and indirect character and reveals a field driven transition of the nature of the molecular ground state exciton wave function. Finally, the interdot quantum coupling strength is deduced optically and its dependence on the interdot separation is calculated.

Anomalous spin dephasing in (110) GaAs quantum wells: anisotropy and intersubband effects.

A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As quantum wells grown on a (110) oriented substrate. The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared to spins along [110]. The spin lifetimes of both spin orientations decrease monotonically above temperatures of 80 and 120 K, respectively. The decrease is very surprising for spins along the [110] direction and cannot be explained by the usual Dyakonov-Perel dephasing mechanism. A novel spin dephasing mechanism is put forward that is based on scattering of electrons between different quantum well subbands.

Coulomb drag as a probe of the nature of compressible States in a magnetic field.

Magnetodrag reveals the nature of compressible states and the underlying interplay of disorder and interactions. At nu=3/2 clear T(4/3) dependence is observed, which signifies the metallic nature of the N=0 Landau level. In contrast, drag in higher Landau levels reveals an additional contribution, which anomalously grows with decreasing T before turning to zero following a thermal activation law. The anomalous drag is discussed in terms of electron-hole asymmetry arising from disorder and localization, and the crossover to normal drag at high fields as due to screening of disorder.