Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 3 de 3
Filtrar
Mais filtros










Base de dados
Assunto principal
Intervalo de ano de publicação
1.
Methods Appl Fluoresc ; 10(3)2022 May 25.
Artigo em Inglês | MEDLINE | ID: mdl-35580579

RESUMO

The luminescence properties of NaMgF3:Sm and NaMgF3:Ce,Sm were studied in the vacuum ultraviolet spectral region. Excitation bands corresponding to the charge transfer processes F- â†’ Sm3+, O2- â†’ Sm3+, and O2- â†’ Ce3+, and the energy transfer processes Ce3+ â†’ Sm3+and O2- â†’ Sm3+, were observed. The energies of the Sm3+charge transfer transitions and the crystal field split Ce3+4f05d1transitions were used to construct a complete host referred binding energy diagram for the series of lanthanide-doped NaMgF3:Ln compounds. We demonstrate that the optical and luminescence properties predicted by the binding energy diagram are in good agreement with those predicted by the binding energy diagram constructed via the alternative impurity-informed method, and all available experimental data regarding the NaMgF3:Ln compounds. We demonstrate that NaMgF3:Ln compounds are model systems for the study of charge trapping phenomena and divalent lanthanide luminescence. Ultimately, we validate that the impurity-informed method can be used to establish the energy levels of lanthanides in fluoride systems.

2.
J Phys Condens Matter ; 32(2): 025703, 2020 Jan 09.
Artigo em Inglês | MEDLINE | ID: mdl-31530766

RESUMO

Photoluminescence (PL) and radioluminescence (RL) measurements were made on NaMgF3:Sm before, during and after exposure to high doses of ionising radiation. Magnetic measurements prior to irradiation showed that approximately 10% of the total Sm concentration was in the divalent state. The RL from Sm3+ was found to increase while the Sm2+ RL decreased with increasing x-ray dose before reaching steady-state values for high doses. This behaviour is opposite to that previously reported for Sm3+ and Sm2+ PL. We show that this apparent discrepancy can be accounted for by a RL model where there is a hole trap, an electron trap, and direct x-ray induced carrier recombination at Sm2+ and Sm3+. Furthermore, a good fit to the dose-dependence of all of the Sm RL emissions can be obtained by assuming that the relevant electron and hole traps are close to Sm3+. Our model accounts for F3-centre production during irradiation that affects some of the Sm3+ RL emissions via reabsorption of the RL by the F3-centres. Thus, the rate of F3-centre production can be conveniently monitored by the RL intensity ratio, I RL(567 nm)/I RL(650 nm). Additionally, the Sm2+ RL emissions may be expressed as [1.94 × I RL(721 nm)] - I RL(695 nm) to determine the real-time dose rate, independent of dose history.

SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA
...