Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers.

For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin III-Sb layers as quantum wells or in superlattices are well known. However, these alloys suffer from severe surface segregation problems, so that the actual profiles are very different from the nominal ones. Here, by inserting AlAs markers within the structure, state-of-the-art transmission electron microscopy techniques were used to precisely monitor the incorporation/segregation of Sb in ultrathin GaAsSb films (from 1 to 20 monolayers (MLs)). Our rigorous analysis allows us to apply the most successful model for describing the segregation of III-Sb alloys (three-layer kinetic model) in an unprecedented way, limiting the number of parameters to be fitted. The simulation results show that the segregation energy is not constant throughout the growth (which is not considered in any segregation model) but has an exponential decay from 0.18 eV to converge asymptotically towards 0.05 eV. This explains why the Sb profiles follow a sigmoidal growth model curve with an initial lag in Sb incorporation of 5 MLs and would be consistent with a progressive change in surface reconstruction as the floating layer is enriched.

Direct geometric probe of singularities in band structure.

A quantum system's energy landscape may have points where multiple energy surfaces are degenerate and that exhibit singular geometry of the wave function manifold, with major consequences for the system's properties. Ultracold atoms in optical lattices have been used to indirectly characterize such points in the band structure. We measured the non-Abelian transformation produced by transport directly through the singularities. We accelerated atoms along a quasi-momentum trajectory that enters, turns, and then exits the singularities at linear and quadratic band-touching points of a honeycomb lattice. Measurements after transport identified the topological winding numbers of these singularities to be 1 and 2, respectively. Our work introduces a distinct method for probing singularities that enables the study of non-Dirac singularities in ultracold-atom quantum simulators.

Interaction-Enhanced Group Velocity of Bosons in the Flat Band of an Optical Kagome Lattice.

Geometric frustration of particle motion in a kagome lattice causes the single-particle band structure to have a flat s-orbital band. We probe this band structure by placing a Bose-Einstein condensate into excited Bloch states of an optical kagome lattice, and then measuring the group velocity through the atomic momentum distribution. We find that interactions renormalize the band structure, greatly increasing the dispersion of the third band, which is nearly non-dispersing the single-particle treatment. Calculations based on the lattice Gross-Pitaevskii equation indicate that band structure renormalization is caused by the distortion of the overall lattice potential away from the kagome geometry by interactions.