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Polarization rotation and wavelength filtering are key functionalities used to build complex photonic integrated circuits. Both these functionalities have been demonstrated in various material and device platforms. We propose, for the first time, a fully passive wavelength selective polarization rotation in silicon nitride/amorphous silicon hybrid waveguide. We demonstrate TE0 â TM0 and TM0 â TE0 wavelength selective polarization rotator-cum-filter with a measured 3dB bandwidth of 14.8 nm. Further, we experimentally demonstrate a proof of concept for simultaneous coarse wavelength division multiplexing and polarization rotation for the first time in a passive configuration. We also show the feasibility of bandwidth engineering from 0.59 nm to 81 nm, enabled by the unique flexibility of the proposed hybrid waveguide.
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In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in the GaN-on-sapphire platform. We provide a detailed demonstration of the material characterization, device simulation, and experimental results. We achieve a grating coupler efficiency of -5.2 dB/coupler with a 1 dB and 3 dB bandwidth of 40 nm and 80 nm, respectively. We measure a single-mode waveguide loss of -6 dB/cm. The losses measured here are the lowest in a GaN-on-sapphire photonic circuit. This demonstration provides opportunities for the development of on-chip linear and non-linear optical processes using the GaN-on-sapphire platform. To the best of our knowledge, this is the first demonstration of an integrated photonic device using a GaN HEMT stack with 2D electron gas.
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We demonstrate a miniaturized wafer-scale optical gas sensor that combines the gas cell, an optical filter, and integrated flow channels. We present the design, fabrication and characterization of an integrated cavity-enhanced sensor. Using the module, we demonstrate absorption sensing of ethylene down to 100 ppm level.
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We demonstrate an on-chip in-plane polarization independent multi-spectral color filter in the visible to near-infrared wavelength band. We experimentally show a four-channel transmission and in-plane spectral filter characteristics spanning a 400-nm spectral range. Engineered 2D guided mode resonance structures in a silicon nitride-on-sapphire substrate are used to realize the filters. The in-plane color filters could provide the necessary impetus for developing robust integrated photonic platforms for on-chip devices and applications.
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The interaction of light with collective charge oscillations, called plasmon-polariton, and with polar lattice vibrations, called phonon-polariton, are essential for confining light at deep subwavelength dimensions and achieving strong resonances. Traditionally, doped-semiconductors and conducting metal oxides (CMO) are used to achieve plasmon-polaritons in the near-to-mid infrared (IR), while polar dielectrics are utilized for realizing phonon-polaritons in the long-wavelength IR (LWIR) spectral regions. However, demonstrating low-loss plasmon- and phonon-polaritons in one host material will make it attractive for practical applications. Here, we demonstrate high-quality tunable short-wavelength IR (SWIR) plasmon-polariton and LWIR phonon-polariton in complementary metal-oxide-semiconductor compatible group III-V polar semiconducting scandium nitride (ScN) thin films. We achieve both resonances by utilizing n-type (oxygen) and p-type (magnesium) doping in ScN that allows modulation of carrier concentration from 5 × 1018 to 1.6 × 1021 cm-3. Our work enables infrared nanophotonics with an epitaxial group III semiconducting nitride, opening the possibility for practical applications.
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We present silicon nitride grating enabled fiber-chip coupling in the sub-near-infrared band. We present a comprehensive design and simulation and experimental demonstration of uniform and apodized grating couplers, with and without bottom reflectors. The mode engineering yields a best efficiency of -1.6 dB for apodized grating design, which is further improved to -0.66 dB with a bottom reflector. Experimentally, we demonstrate a coupling efficiency of -2.2 dB for the optimized design. Furthermore, we present a detailed simulation and measurement comparison of various grating parameters and the effect of fabrication tolerances on the grating performance.
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We present an on-chip photodetector integrated wavelength filter on a SiN-on-silicon-on-insulator (SOI) platform in the 850 nm wavelength window. The wavelength filter is designed using an echelle grating with a distributed Bragg reflector as the grating reflectors. We present the design and experimental realization of a six-channel wavelength filter with a channel spacing of 10 nm. Experimentally, we achieve an insertion loss of 4.3 dB and an adjacent channel cross talk of 22 dB. We demonstrate a silicon nano-slab waveguide integrated metal-semiconductor-metal photodetector with a maximum responsivity of 0.56 A/W and dark current of 217 nA. Furthermore, we demonstrate the integration of the echelle grating with the detector and show the feasibility of a CMOS compatible SiN-on-SOI platform for various applications, including short-reach communication and sensing applications.
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Polymer photonic circuits offer a versatile platform for various applications, including communication, sensing and optical signal processing. Though polymers offer broadband, linear and nonlinear optical properties, the coupling between an optical fibre and a polymer waveguide has been a challenge. In this work, we propose and demonstrate a wafer-scale vertical coupling scheme for polymer waveguides. The scheme uses a silicon nitride grating coupler with an inverse taper to couple between an optical fibre and a SU8 polymer waveguide. We demonstrate a maximum coupling efficiency of -3.55 dB in the C-band and -2.92 dB in the L-band with a 3-dB bandwidth of 74 and 80 nm, respectively. A detailed design and simulation, fabrication, and characterisation results are presented. The scheme demonstrates a scalable and efficient surface grating approach for polymer photonic integrated circuits.
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We present a compact, highly sensitive and scalable on-chip photonic vibration measurement scheme for vibration sensing. The scheme uses a silicon photonic diffraction-grating based sensor integrated underneath a silicon cantilever. We demonstrate a static and dynamic measurement sensitivity (ΔT/Δgap) of 0.6 % change in intensity per nm displacement. The electrostatically driven dynamic response measurement of the grating based sensor shows an excellent agreement with commercial Laser Doppler Vibrometer (LDV) measurement. We demonstrate the thermo-mechanical noise measurement on the cantilever in ambience, which is verified using LDV. A minimum displacement of 1.9 pm is measured with a displacement sensitivity of 10 µW/nm for a measurement bandwidth of 16 Hz. The demonstrated sensitivity is 2 orders of magnitude better than that obtained from measurements of static displacement. We also present a detailed 2D-FDTD simulation and optimization of the grating-based sensor to achieve maximum displacement sensitivity.
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We utilize adaptive optimization to enhance the spectral broadening of an amplified electro-optic frequency comb with a 25 GHz repetition rate in a highly nonlinear fiber and subsequently generate sub-picosecond pulses. The spectral phase of the comb is adaptively optimized by a Fourier pulse shaper in a closed control loop with the HNLF output spectrum as the process variable to be optimized. Enhanced spectral broadening also increases the stimulated Brillouin scattering threshold allowing increased power scaling and thereby boosting the bandwidth by a factor of more than 13 times over the initial comb. System versatility to varying conditions is demonstrated by achieving consistent bandwidth enhancement (nearly or more than 100 lines) in varying operating conditions that distort the temporal profile of the comb. In all cases, the optimization yields a near transform limited pulse that enters the nonlinear fiber. Sub-picosecond pulse generation is achieved with a short length of single mode fiber post the nonlinear fiber.
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We demonstrate a technique to continuously tune center frequency and repetition rate of optical frequency combs generated in silicon microring modulators and bandwidth scale them. We utilize a drive frequency dependent, microwave power induced shifting of the microring modulator resonance. In this work, we demonstrate center frequency tunability of frequency combs generated in silicon microring modulators over a wide range (â¼8nm) with fixed number of lines. We also demonstrate continuously tunable repetition rates from 7.5GHz to 15GHz. Further, we use this effect to demonstrate a proof-of-principle experiment to bandwidth scale an 8-line (20dB band) comb generated from a single ring modulator driven at 10GHz to a comb with 12 and 15 lines by cascading two and three ring modulators, respectively. This is accomplished by merging widely spaced ring modulator resonances to a common location, thus coupling light simultaneously into multiple cascaded ring modulators.
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We present a continuously tunable silicon photonics assisted radio frequency (RF) phase shifter using a coupled microring resonator. Using the coupled cavity, we demonstrate a sub-1 dB power penalty for a RF bandwidth of 34.5 GHz (9-43.5 GHz) and a phase shift of π over the reported frequency range. Rigorous optimization of the cavity design using the coupled-mode theory is carried out to realize ultranarrow resonance peaks with a low-extinction ratio and large phase shift. Thermal tuning of the cavity is used to tune the phase while all-optical tuning is exploited to achieve broadband operation. We present a detailed simulation and experimental study of the proposed configuration. The proposed device configuration exhibits a configurable resonance linewidth and extinction ratio that allows for a broad bandwidth and an extremely low power penalty microwave phase shifter. We believe the demonstration would allow better integration of the on-chip functional elements of integrated microwave photonics.
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We demonstrate a versatile technique to generate a broadband optical frequency comb source in the C-band. This is accomplished by nonlinear spectral broadening of a phase modulated comb source driven by dual frequency offset locked carriers. The locking is achieved by setting up a heterodyne optical frequency locked loop to lock two phase modulated electro-optic 25 GHz frequency combs sourced from individual seed carriers offset by 100 GHz, to within 6.7 MHz of each other. We realize spectral broadening in highly nonlinear fiber after suitable amplification to obtain an equalized, nonlinearly broadened frequency comb. We obtain $\sim 86 $â¼86 lines in a 20 dB band spanning over 2 THz.
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Silicon Nitride (SiN) is emerging as a promising material for a variety of integrated photonic applications. Given its low index contrast however, a key challenge remains to design efficient couplers for the numerous platforms in SiN photonics portfolio. Using a combination of bottom reflector and a chirp generating algorithm, we propose and demonstrate high efficiency, grating couplers on two distinct SiN platforms. For a partially etched grating on 500 nm thick SiN, a calculated peak efficiency of -0.5 dB/coupler is predicted, while for a fully etched grating on 400 nm thick SiN, an efficiency of -0.4 dB/coupler is predicted. Experimentally measured coupling efficiencies are observed to be -1.17 and -1.24 dB/coupler for the partial and fully etched grating couplers respectively in the C-L band region. Furthermore, through numerical simulations, it is shown that the chirping algorithm can be implemented in eight additional combinations comprising SiN film thickness between 300-700 nm as well as alternate claddings, to achieve a per coupler loss between -0.33 to -0.65 dB.
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We experimentally demonstrate a broadband, fabrication-tolerant compact silicon waveguide taper (34.2 µm) in a silicon-on-insulator wire waveguide. The taper works on multimode interference along the length of the taper. A single taper design has broadband operation with coupling efficiency >70% over 700 nm that can be used in O-, C-, and L-bands. The compact taper is highly tolerant to fabrication variations; ±100 nm change in the taper and end waveguide width varies the taper transmission by <5%. The footprint of the device, i.e., the taper along with linear gratings, is ≈442 µm2, 11.5× smaller than the adiabatic taper. The taper with linear gratings provides coupling efficiency comparable to standard focusing gratings. We have also experimentally compared the translational and rotational alignment tolerance of the focusing grating with linear grating couplers.
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We present a waveguide integrated high-speed Si photodetector integrated with a silicon nitride (SiN) waveguide on an silicon-on-insulator (SOI) platform for short reach data communication in a 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by the coupling of a femtosecond laser source through an SiN grating coupler of the integrated photodetector. We estimate a 3 dB bandwidth of 14 GHz at 20 V bias which, to the best of our knowledge, is the highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterization of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity.
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We demonstrate an ultra-compact waveguide taper on a silicon nitride platform. The proposed taper provides a coupling efficiency of 95% at a length of 19.5 µm in comparison to the standard linear taper of length 50 µm, which connects a 10 µm wide waveguide to a 1 µm wide photonic wire. The taper has a spectral response >75% spanning over 800 nm and resilience to fabrication variations; ±200 nm change in taper and end waveguide width varies transmission by <5%. We experimentally demonstrate taper insertion loss of <0.1 dB/transition for a taper as short as 19.5 µm, and reduce the footprint of the photonic device by 50.8% compared to the standard adiabatic taper. To the best of our knowledge, the proposed taper is the shortest waveguide taper ever reported in silicon nitride.
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We experimentally demonstrate tunable, highly-stable frequency combs with high repetition-rates using a single, charge injection based silicon PN modulator. In this work, we demonstrate combs in the C-band with over eight lines in a 20-dB bandwidth. We demonstrate continuous tuning of the center frequency in the C-band and tuning of the repetition-rate from 7.5GHz to 12.5GHz. We also demonstrate through simulations the potential for bandwidth scaling using an optimized silicon PIN modulator. We find that the time varying free carrier absorption due to carrier injection, an undesirable effect in data modulators, assists here in enhancing flatness in the generated combs.
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We present a novel photonic wire-to-slot waveguide coupler in SOI. The phase matching between a wire and slot mode is achieved using a mode transformer. The architecture consists of a balanced 50/50 power splitter and a tunable phase matched taper combiner forming a slot waveguide. We show a theoretical wire-to-slot coupling efficiency of 99 % is achievable and experimentally, we demonstrate a coupling efficiency of 99 % in the 1550 nm band. Based on the coupling scheme, we also show excitation of a slot mode in a slotted ring resonator and verified the excitation through the thermo-optic response of the rings. We show a nearly athermal behaviour of a PMMA filled slot ring with a thermo-optic response of 12.8 pm/°C compare to 43.5 pm/°C for an air clad slot waveguide.
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We propose and demonstrate a self-coupled micro-ring resonator for resonance splitting by mutual mode coupling of a cavity mode and a counter-propagating mode in a silicon-on-insulator platform. The resonator is constructed with a self-coupling region that can excite a counter-propagating mode. We experimentally study the effect of self-coupling on the resonance splitting, resonance extinction, and quality-factor evolution and stability. Based on the coupling, we achieve 72% of the free spectral range (FSR) splitting for a cavity with an FSR of 2.1 nm with <5% variation in the cavity quality factor. The self-coupled resonance splitting shows a highly robust spectral characteristic that can be exploited for sensing and optical signal processing.