Edge-Rich 3D Structuring of Metal Chalcogenide/Graphene with Vertical Nanosheets for Efficient Photocatalytic Hydrogen Production.

Constructing pertinent nanoarchitecture with abundant exposed active sites is a valid strategy for boosting photocatalytic hydrogen generation. However, the controllable approach of an ideal architecture comprising vertically standing transition metal chalcogenides (TMDs) nanosheets on a 3D graphene network remains challenging despite the potential for efficient photocatalytic hydrogen production. In this study, we fabricated edge-rich 3D structuring photocatalysts involving vertically grown TMDs nanosheets on a 3D porous graphene framework (referred to as 3D Gr). 2D TMDs (MoS2 and WS2)/3D Gr heterostructures were produced by location-specific photon-pen writing and metal-organic chemical vapor deposition for maximum edge site exposure enabling efficient photocatalytic reactivity. Vertically aligned 2D Mo(W)S2/3D Gr heterostructures exhibited distinctly boosted hydrogen production because of the 3D Gr caused by synergetic impacts associated with the large specific surface area and improved density of exposed active sites in vertically standing Mo(W)S2. The heterostructure involving graphene and TMDs corroborates an optimum charge transport pathway to rapidly separate the photogenerated electron-hole pairs, allowing more electrons to contribute to the photocatalytic hydrogen generation reaction. Consequently, the size-tailored heterostructure showed a superior hydrogen generation rate of 6.51 mmol g-1 h-1 for MoS2/3D graphene and 7.26 mmol g-1 h-1 for WS2/3D graphene, respectively, which were 3.59 and 3.76 times greater than that of MoS2 and WS2 samples. This study offers a promising path for the potential of 3D structuring of vertical TMDs/graphene heterostructure with edge-rich nanosheets for photocatalytic applications.

Dual Catalytic and Self-Assembled Growth of Two-Dimensional Transition Metal Dichalcogenides Through Simultaneous Predeposition Process.

The recent introduction of alkali metal halide catalysts for chemical vapor deposition (CVD) of transition metal dichalcogenides (TMDs) has enabled remarkable two-dimensional (2D) growth. However, the process development and growth mechanism require further exploration to enhance the effects of salts and understand the principles. Herein, simultaneous predeposition of a metal source (MoO3 ) and salt (NaCl) by thermal evaporation is adopted. As a result, remarkable growth behaviors such as promoted 2D growth, easy patterning, and potential diversity of target materials can be achieved. Step-by-step spectroscopy combined with morphological analyses reveals a reaction path for MoS2 growth in which NaCl reacts separately with S and MoO3 to form Na2 SO4 and Na2 Mo2 O7 intermediates, respectively. These intermediates provide a favorable environment for 2D growth, including an enhanced source supply and liquid medium. Consequently, large grains of monolayer MoS2 are formed by self-assembly, indicating the merging of small equilateral triangular grains on the liquid intermediates. This study is expected to serve as an ideal reference for understanding the principles of salt catalysis and evolution of CVD in the preparation of 2D TMDs.

Surface Passivation of Layered MoSe2 via van der Waals Stacking of Amorphous Hydrocarbon.

Development of efficient surface passivation methods for semiconductor devices is crucial to counter the degradation in their electrical performance owing to scattering or trapping of carriers in the channels induced by molecular adsorption from the ambient environment. However, conventional dielectric deposition involves the formation of additional interfacial defects associated with broken covalent bonds, resulting in accidental electrostatic doping or enhanced hysteretic behavior. In this study, centimeter-scaled van der Waals passivation of transition metal dichalcogenides (TMDCs) is demonstrated by stacking hydrocarbon (HC) dielectrics onto MoSe2 field-effect transistors (FETs), thereby enhancing the electric performance and stability of the device, accompanied with the suppression of chemical disorder at the HC/TMDCs interface. The stacking of HC onto MoSe2 FETs enhances the carrier mobility of MoSe2 FET by over 50% at the n-branch, and a significant decrease in hysteresis, owing to the screening of molecular adsorption. The electron mobility and hysteresis of the HC/MoSe2 FETs are verified to be nearly intact compared to those of the fabricated HC/MoSe2 FETs after exposure to ambient environment for 3 months. Consequently, the proposed design can act as a model for developing advanced nanoelectronics applications based on layered materials for mass production.

Improved Photoelectrochemical Performance of MoS2 through Morphology-Controlled Chemical Vapor Deposition Growth on Graphene.

The morphology of MoS2 nanostructures was manipulated from thin films to vertically aligned few-layer nanosheets on graphene, in a controllable and practical manner, using metalorganic chemical vapor deposition. The effects of graphene layer and MoS2 morphology on photoelectrochemical (PEC) performance were systematically studied on the basis of electronic structure and transitions, carrier dynamic behavior, and PEC measurements. The heterojunction quality of the graphene/vertical few-layer MoS2 nanosheets was ensured by low-temperature growth at 250-300 °C, resulting in significantly improved charge transfer properties. As a result, the PEC photocurrent density and photoconversion efficiency of the few-layer MoS2 nanosheets significantly increased upon the insertion of a graphene layer. Among the graphene/MoS2 samples, the few-layer MoS2 nanosheet samples exhibited shorter carrier lifetimes and smaller charge transfer resistances than the thin film samples, suggesting that vertically aligned nanosheets provide highly conductive edges as an efficient pathway for photo-generated carriers and have better electronic contact with graphene. In addition, the height of vertical MoS2 nanosheets on graphene should be controlled within the carrier diffusion length (~200 nm) to achieve the optimal PEC performance. These results can be utilized effectively to exploit the full potential of two-dimensional MoS2 for various PEC applications.

Efficient Visible-Light Photocatalysis of TiO2-δ Nanobelts Utilizing Self-Induced Defects and Carbon Doping.

Efficient visible-light photocatalysis was realized by exploring self-induced defect states, including the abundant surface states of TiO2-δ nanobelts synthesized through metal-organic chemical vapor deposition (MOCVD). The TiO2-δ nanobelts exhibited two strong defect-induced absorption peaks at 2.91 and 1.92 eV, overlapping with the conduction band states so that photoexcited carriers can contribute effectively for the photocatalysis reaction. To further enhance visible-light photocatalytic activity, carbon atoms, the by-product of the MOCVD reaction, were self-doped at the judiciously determined growth conditions. The resulting visible-light photocatalysis suggests that the large surface area and consequent high concentration of the surface states of the TiO2-δ nanobelts can be effectively utilized in a wide range of photocatalysis applications.

Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature.

Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS strongly depend on its surface defects. Therefore, understanding the effects of its surface defects on its electronic and gas-sensing properties is a key factor in developing low-temperature SnS gas sensors. Herein, using thin SnS films annealed at different temperatures, we demonstrate that SnS exhibits n-type semiconducting behavior upon the appearance of S vacancies. Furthermore, the presence of S vacancies imparts the n-type SnS sensor with better sensing performance under UV illumination at room temperature (25 °C) than that of a p-type SnS sensor. These results are thoroughly investigated using various experimental analysis techniques and theoretical calculations using density functional theory. In addition, n-type SnS deposited on a polyimide substrate can be used to fabricate high-stability flexible sensors, which can be further developed for real applications.

Plasmonic Ag-Decorated Few-Layer MoS2 Nanosheets Vertically Grown on Graphene for Efficient Photoelectrochemical Water Splitting.

A controllable approach that combines surface plasmon resonance and two-dimensional (2D) graphene/MoS2 heterojunction has not been implemented despite its potential for efficient photoelectrochemical (PEC) water splitting. In this study, plasmonic Ag-decorated 2D MoS2 nanosheets were vertically grown on graphene substrates in a practical large-scale manner through metalorganic chemical vapor deposition of MoS2 and thermal evaporation of Ag. The plasmonic Ag-decorated MoS2 nanosheets on graphene yielded up to 10 times higher photo-to-dark current ratio than MoS2 nanosheets on indium tin oxide. The significantly enhanced PEC activity could be attributed to the synergetic effects of SPR and favorable graphene/2D MoS2 heterojunction. Plasmonic Ag nanoparticles not only increased visible-light and near-infrared absorption of 2D MoS2, but also induced highly amplified local electric field intensity in 2D MoS2. In addition, the vertically aligned 2D MoS2 on graphene acted as a desirable heterostructure for efficient separation and transportation of photo-generated carriers. This study provides a promising path for exploiting the full potential of 2D MoS2 for practical large-scale and efficient PEC water-splitting applications.

Acute renal failure associated with a minimal change nephrotic syndrome in a systemic lupus erythematosus patient.

In systemic lupus erythematosus (SLE), acute renal failure (ARF) is usually associated with severe lupus nephritis and ARF associated with other glomerular diseases is extremely rare. We recently encountered a patient with ARF that was associated with a minimal change nephrotic syndrome (MCNS) in SLE. A 41-year-old woman presented with a nephrotic syndrome and ARF. She fulfilled four of the American College of Rheumatology criteria for the classification of SLE. However, a renal biopsy revealed that there were no glomerular abnormalities and no deposition of immune complex. The generalized edema disappeared and the high creatinine levels decreased after prednisolone therapy.