Continuous-wave GaAs/AlGaAs quantum cascade laser at 5.7 THz.

Design strategies for improving terahertz (THz) quantum cascade lasers (QCLs) in the 5-6 THz range are investigated numerically and experimentally, with the goal of overcoming the degradation in performance that occurs as the laser frequency approaches the Reststrahlen band. Two designs aimed at 5.4 THz were selected: one optimized for lower power dissipation and one optimized for better temperature performance. The active regions exhibited broadband gain, with the strongest modes lasing in the 5.3-5.6 THz range, but with other various modes observed ranging from 4.76 to 6.03 THz. Pulsed and continuous-wave (cw) operation is observed up to temperatures of 117 K and 68 K, respectively. In cw mode, the ridge laser has modes up to 5.71 THz - the highest reported frequency for a THz QCL in cw mode. The waveguide loss associated with the doped contact layers and metallization is identified as a critical limitation to performance above 5 THz.

Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation.

Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applications including remote sensing, heat seeking, spectroscopy, and more. In this study, we demonstrate room-temperature operation of nanowire-based photodetectors at MWIR composed of vertical selective-area InAsSb nanowire photoabsorber arrays on large bandgap InP substrate with nanoscale plasmonic gratings. We accomplish this by significantly suppressing the nonradiative recombination at the InAsSb nanowire surfaces by introducing ex situ conformal Al2O3 passivation shells. Transient simulations estimate an extremely low surface recombination velocity on the order of 103 cm/s. We further achieve room-temperature photoluminescence emission from InAsSb nanowires, spanning the entire MWIR regime from 3 to 5 µm. A dry-etching process is developed to expose only the top nanowire facets for metal contacts, with the sidewalls conformally covered by Al2O3 shells, allowing for a higher internal quantum efficiency. Based on these techniques, we fabricate nanowire photodetectors with an optimized pitch and diameter and demonstrate room-temperature spectral response with MWIR detection signatures up to 3.4 µm. The results of this work indicate that uncooled focal plane arrays at MWIR on low-cost InP substrates can be designed with nanostructured absorbers for highly compact and fully integrated detection platforms.

Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions.

Photodetection at short- and mid-wavelength infrared (SWIR and MWIR) enables various sensing systems used in heat seeking, night vision, and spectroscopy. As a result, uncooled photodetection at these wavelengths is in high demand. However, these SWIR and MWIR photodetectors often suffer from high dark current, causing them to require bulky cooling accessories for operation. In this study, we argue for the feasibility of improving the room-temperature detectivity by significantly suppressing dark current. To realize this, we propose using (1) a nanowire-based platform to reduce the photoabsorber volume, which in turn reduces trap state population and hence generation-recombination current, and (2) p-n heterojunctions to prevent minority carrier diffusion from the large bandgap substrate into the nanowire absorber. We prove these concepts by demonstrating a comprehensive three-dimensional photoresponse model to explore the level of detectivity offered by vertical InAs(Sb) nanowire photodetector arrays with self-assembled plasmonic gratings. The resultant electrical simulations show that the dark current can be reduced by three to four orders at room temperature, leading to a peak detectivity greater than 3.5 × 1010 cm Hz1/2 W-1 within the wavelength regime of 2.0-3.4 µm, making it comparable to the best commercial and research InAs p-i-n homojunction photodiodes. In addition, we show that the plasmonic resonance peaks can be easily tuned by simply varying the exposed nanowire height. Finally, we investigate the impact of nanowire material properties, such as carrier mobility and carrier lifetime, on the nanowire photodetector detectivity. This work provides a roadmap for the electrical design of nanowire optoelectronic devices and stimulates further experimental validation for uncooled photodetectors at SWIR and MWIR.