Ultrasensitive Acoustic Detection Using an Enlarged Fabry-Perot Cavity with a Graphene Diaphragm.

For exerting high sensitivity of ultrathin graphene to detection deformation, an enlarged backing air cavity (EBC) structure is developed to further enhance the mechanical sensitivity (SM) of a graphene-based Fabry-Perot (F-P) acoustic sensor. COMSOL acoustic field simulation on the air cavity size-dependent SM confirms the optimal length and radius of the EBC of 0.2 and 1.5 mm, respectively, with the maximum simulation SM of 26.16 nm/Pa@1 kHz. Acoustic experiments further demonstrate that the frequency response of the fabricated graphene-based F-P acoustic sensor after the use of the EBC is enhanced by 5.73-79.33 times in the range of 0.5-18 kHz, compared with the conventional one without the EBC. Especially the maximum SM is up to 187.32 nm/Pa@16 kHz, which is at least 17% higher than the SM values ranging from 1.1 to 160 nm/Pa in previously reported F-P acoustic sensors using various diaphragm materials. More acoustic characteristics are examined to highlight various merits of the EBC structure, including a signal-to-noise ratio (SNR) of 60-75 dB@0.5-18 kHz, a time stability of less than ±1.3% for 90 min, a detection resolution of 0.01 Hz, and a high-fidelity speech detection with a cross-correlation coefficient of greater than 0.9, thereby revealing its high-performance weak acoustic sensing and speech recognition applications.

Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System.

In this work, Ga2O3 films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O2) plasma. To improve the quality of Ga2O3 films, they were annealed in an O2 ambient furnace system for 15 min at 700, 800, and 900 °C, respectively. The performance improvement was verified from the measurement results of X-ray diffraction, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The optical bandgap energy of the Ga2O3 films decreased with an increase of annealing temperatures. Metal-semiconductor-metal ultraviolet C photodetectors (MSM UVC-PDs) with various Ga2O3 active layers were fabricated and studied in this work. The cut-off wavelength of the MSM UVC-PDs with the Ga2O3 active layers annealed at 800 °C was 250 nm. Compared with the performance of the MSM UVC-PDs with the as-grown Ga2O3 active layers, the MSM UVC-PDs with the 800 °C-annealed Ga2O3 active layers under a bias voltage of 5 V exhibited better performances including photoresponsivity of 22.19 A/W, UV/visible rejection ratio of 5.98 × 104, and detectivity of 8.74 × 1012 cmHz1/2W-1.