RESUMO
In order to adapt to the quick and large amount of necessity in data flow for 5G cloud generation, it is necessary to develop a technology of warm storage device in market which takes a great balance between the reading/writing performance and the price per storage capacity. The technologies of warm storage devices are assumed to adopt phase change memory (PCM), resistive random access memory or magnetoresistive random access memory which have the highest possibilities to 5G structures and magnetic properties of Co on non-hydrogenated diamond like carbon (DLC)/Si(100) films and Co/DLC interface are investigated. The self-assembled magnetic heterostructure is firstly reported in hexagonal close packing Co layers perpendicular magnetic anisotropy (PMA) on Co carbide layers (in-plane) during Co deposited on DLC/Si(100). A PMA/in-plane magnetic heterostructure is expected to have the highest switching current to the energy barrier ratio of near 4 in previous report, which has great potential for developing warm memory devices. Based on these unique characteristics, we provide a novel design called magnetic anisotropy-phase change memory (Mani-PCM) which can impact the developing blueprint of memory. The working process of Mani-PCM includes in set, reset and read states as a universal PCM. This brand new technology is highly promising as warm memory devices including high reading/writing performance and economical price per storage capacity.
RESUMO
In this work, three layers of transparent conductive films of WO3/Ag/WO3 (WAW) were deposited on a glass substrate by radio frequency (RF) magnetron sputtering. The thicknesses of WO3 (around 50~60 nm) and Ag (10~20 nm) films were mainly the changeable factors to achieve the optimal transparent conductivity attempting to replace the indium tin oxide (ITO) in cost consideration. The prepared films were cardinally subjected to physical and electrical characteristic analyses by means of X-ray diffraction analysis (XRD), field-emission scanning electron microscope (FE-SEM), and Keithley 4200 semiconductor parameter analyzer. The experimental results show as the thickness of the Ag layer increases from 10 nm to 20 nm, the resistance becomes smaller. While the thickness of the WO3 layer increases from 50 nm to 60 nm, its electrical resistance becomes larger.
