Rare-earth-incorporated ternary Ce x Cd1-x S quantum dot-sensitized solar cells.

This work presents a new absorber material - rare-earth-doped ternary Ce x Cd1-x S quantum dots (QDs) - for solar cells. Ce x Cd1-x S QDs were synthesized by partially replacing the cation Cd in the binary sulfide CdS with Ce using a two-step solution processing process. First, Ce-S QDs were grown on a mesoporous TiO2 electrode. Second, Cd-S QDs were grown on top of the Ce-S QDs. Post annealing transformed the Ce-S/Cd-S double layers into the ternary Ce x Cd1-x S structure. The synthesized Ce x Cd1-x S QDs have the same hexagonal structure as the host CdS, with an average particle size of 11.8 nm. X-ray diffraction reveals a slight lattice expansion in Ce x Cd1-x S relative to CdS. The band gap E g of Ce x Cd1-x S exhibits a monotonic decrease from 2.40 to 2.24 eV with increasing Ce content x from 0 to 0.20, indicating an E g tunable by controlling the dopant content. Ce x Cd1-x S QDSCs were fabricated with a polysulfide electrolyte and CuS counter electrode. The best Ce x Cd1-x S cell yields a J sc of 8.16 mA cm-2, a V oc of 0.73 V, a fill factor of 62.5%, and an efficiency of 3.72% under 1 sun. The efficiency increases to 4.24% under the reduced light intensity of 0.25 sun. The efficiency of the Ce x Cd1-x S cell is 25% higher than that of the host CdS cell. The improved performance is attributed to the broader absorption range resulting from Ce doping. These results suggest the potential of using Ce as a dopant in CdS to tune the E g and improve the photovoltaic performance.

Growth of Less than 20 nm SnO Nanowires Using an Anodic Aluminum Oxide Template for Gas Sensing.

Stannous oxide (SnO) nanowires were synthesized by a template and catalyst-free thermal oxidation process. After annealing a Sn nanowires-embedded anodic aluminum oxide (AAO) template in air, we obtained a large amount of SnO nanowires. SnO nanowires were first prepared by electrochemical deposition and an oxidization method based on an AAO template. The preparation of SnO nanowires used aluminum sheet (purity 99.999%) and then a two-step anodization procedure to obtain a raw alumina mold. Finally, transparent alumina molds (AAO template) were obtained by reaming, soaking with phosphoric acid for 20 min, and a stripping process. We got a pore size of < 20 nm on the transparent alumina mold. In order to meet electroplating needs, we produced a platinum film on the bottom surface of the AAO template by using a sputtering method as the electrode of electroplating deposition. The structure was characterized by X-ray diffraction (XRD). High resolution transmission electron microscopy (HRTEM) and field emission scanning electron microscopy (FESEM) with X-ray energy dispersive spectrometer (EDS) were used to observe the morphology. The EDS spectrum showed that components of the materials were Sn and O. FE-SEM results showed the synthesized SnO nanowires have an approximate length of ~10-20 µm with a highly aspect ratio of > 500. SnO nanowires with a Sn/O atomic ratio of ~1:1 were observed from EDS. The crystal structure of SnO nanowires showed that all the peaks within the spectrum lead to SnO with a tetragonal structure. This study may lead to the use of the 1D structure nanowires into electronic nanodevices and/or sensors, thus leading to nano-based functional structures.

Bandgap Tunable Ternary Cd x Sb2-y S3-δ Nanocrystals for Solar Cell Applications.

We report the synthesis and photovoltaic performance of a new nonstoichiometric ternary metal sulfide alloyed semiconductor-Cd x Sb2-y S3-δ nanocrystals prepared by the two-stage sequential ionic layer adsorption reaction technique. The synthesized Cd x Sb2-y S3-δ nanocrystals retain the orthorhombic structure of the host Sb2S3 with Cd substituting a fraction (x = 0-0.15) of the cationic element Sb. The Cd x Sb2-y S3-δ lattice expands relative to the host, Sb2S3, with its lattice constant a increasing linearly with Cd content x. Optical and external quantum efficiency (EQE) spectra revealed that the bandgap E g of Cd x Sb2-y S3-δ decreased from 1.99 to 1.69 eV (i.e., 625-737 nm) as x increased from 0 to 0.15. Liquid-junction Cd x Sb2-y S3-δ quantum dot-sensitized solar cells were fabricated using the polyiodide electrolyte. The best cell yielded a power conversion efficiency (PCE) of 3.72% with the photovoltaic parameters of J sc = 15.97 mA/cm2, V oc = 0.50 V, and FF = 46.6% under 1 sun. The PCE further increased to 4.86%, a respectable value for a new solar material, under a reduced light intensity of 10% sun. The PCE (4.86%) and J sc (15.97 mA/cm2) are significantly larger than that (PCE = 1.8%, J sc = 8.55 mA/cm2) of the Sb2S3 host. Electrochemical impedance spectroscopy showed that the ZnSe passivation coating increased the electron lifetime by three times. The EQE spectrum of Cd x Sb2-y S3-δ has a maximal EQE of 82% at λ = 350 nm and covers the spectral range of 300-750 nm, which is significantly broader than that (300-625 nm) of the Sb2S3 host. The EQE-integrated current density yields a J ph of 11.76 mA/cm2. The tunable bandgap and a respectable PCE near 5% suggest that Cd x Sb2-y S3-δ could be a potential candidate for a solar material.

Manipulating the Temperature of Sulfurization to Synthesize α-NiS Nanosphere Film for Long-Term Preservation of Non-enzymatic Glucose Sensors.

In this study, alpha nickel sulfide (α-NiS) nanosphere films have been successfully synthesized by electroplating the nickel nanosheet film on the indium tin oxide (ITO) glass substrate and sulfuring nickel-coated ITO glass substrate. First, we electrodeposited the nickel nanosheet films on the ITO glass substrates which were cut into a 0.5 × 1 cm2 size. Second, the nanosheet nickel films were annealed in vacuum-sealed glass ampoules with sulfur sheets at different annealing temperatures (300, 400, and 500 °C) for 4 h in vacuum-sealed glass ampoules. The α-NiS films were investigated by using X-ray diffraction (XRD), variable vacuum scanning electron microscopy (VVSEM), field emission scanning electron microscopy/energy dispersive spectrometer (FE-SEM/EDS), cyclic voltammogram (CV), electrochemical impedance spectroscopy (EIS), ultraviolet/visible/near-infrared (UV/Visible/NIR) spectra, and photoluminescence (PL) spectra. Many nanospheres were observed on the surface of the α-NiS films at the annealing temperature 400 °C for 4 h. We also used the high-resolution transmission electron microscopy (HR-TEM) for the analysis of the α-NiS nanospheres. We demonstrated that our α-NiS nanosphere film had a linear current response to different glucose concentrations. Additionally, our α-NiS nanosphere films were preserved at room temperature for five and a half years and were still useful for detecting glucose at low concentration.

Ag8SnS6: a new IR solar absorber material with a near optimal bandgap.

We report the synthesis and photovoltaic properties of a new ternary solar absorber - Ag8SnS6 nanocrystals prepared by successive ionic layer adsorption reaction (SILAR) technique. The synthesized Ag8SnS6 nanocrystals have a bandgap E g of 1.24-1.41 eV as revealed from UV-Vis and external quantum efficiency (EQE) measurements. Its photovoltaic properties were characterized by assembling a liquid-junction Ag8SnS6 sensitized solar cell for the first time. The best cell yielded a J sc of 9.29 mA cm-2, a V oc of 0.23 V, an FF of 31.3% and a power conversion efficiency (PCE) of 0.64% under 100% incident light illumination using polysulfide electrolyte and Au counter electrode. The efficiency improved to 1.43% at a reduced light intensity of 10% sun. When the polysulfide was replaced by a cobalt electrolyte with a lower redox level, the V oc increased to 0.54 V and PCE increased to 2.29% under 0.1 sun, a respectable efficiency for a new solar material. The EQE spectrum covers the spectral range of 300-1000 nm with a maximum EQE of 77% at λ = 600 nm. The near optimal E g and the respectable photovoltaic performance suggest that Ag8SnS6 nanocrystals have potential to be an efficient IR solar absorber.

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films.

Bi0.8Pr0.2Fe0.95Mn0.05O3/Bi3.96Gd0.04Ti2.95W0.05O12 (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm³ and 62 µC/cm², respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS.

Lead tin sulfide (Pb1-xSnxS) nanocrystals: A potential solar absorber material.

We present a new ternary semiconductor absorber material - Pb1-xSnxS - for solar cells. Pb1-xSnxS nanocrystals (NCs) were synthesized using the successive ionic layer adsorption reaction (SILAR) process. Energy-dispersive X-ray spectroscopy revealed the Sn ratio for a sample prepared with five SILAR cycles to be x=0.55 (i.e. non-stoichiometric formula Pb0.45Sn0.55S). The optical spectra revealed that the energy gap Eg of the Pb1-xSnxS NCs decreased with an increasing number of SILAR cycles n, with Eg=1.67eV for the sample with n=5. Liquid-junction Pb1-xSnxS quantum dot-sensitized solar cells were fabricated using the polysulfide electrolyte. The best cell yielded a short-circuit current density Jsc of 10.1mA/cm2, an open circuit voltage of 0.43V, a fill factor FF of 50% and an efficiency of 2.17% under 1 sun. The external quantum efficiency spectrum (EQE) covered a spectral range of 300-800nm with a maximum EQE of ∼67% at λ=650nm. At the reduced light of 0.1 sun, the efficiency increased to 3.31% (with a normalized Jsc=17.7mA/cm2) - a respectable efficiency for a new sensitizer. This work demonstrates that Pb1-xSnxS shows potential as a solar cell absorber.

Ternary CuBiS2 nanoparticles as a sensitizer for quantum dot solar cells.

This work investigates the synthesis and application in solar cells of a novel solar absorber material CuBiS2. Ternary copper chalcogenide CuBiS2 nanoparticles were grown on a mesoporous TiO2 electrode by the chemical bath deposition (CBD) method. The synthesized CuBiS2 nanoparticles, size 5-10nm, have an energy gap Eg of 2.1eV. Liquid-junction quantum dot-sensitized solar cells were fabricated from the CuBiS2-sensitized electrode using a polysulfide electrolyte. Three types of counter electrodes (CEs) - Pt, Au and Cu2S - were tested. The photovoltaic performance depends on the CBD reaction time and the CE. The best cell, obtained with the Cu2S CE, exhibited the photovoltaic performance of a short-circuit current density Jsc of 6.87mA/cm(2), an open-circuit voltage Voc of 0.25V, a fill factor FF of 36% and a power conversion efficiency η of 0.62%. The present work demonstrates the feasibility of CuBiS2 as a solar energy material.

Synthesis and characterization of single-crystalline zinc tin oxide nanowires.

Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 µm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

Synthesis and Characterization of Tin Disulfide (SnS(2)) Nanowires.

The ordered tin disulfide (SnS(2)) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS(2) nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS(2) nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS(2) nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).

Anodic Aluminum Oxide Membrane-Assisted Fabrication of beta-In(2)S(3) Nanowires.

In this study, beta-In(2)S(3) nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, beta-In(2)S(3) nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the beta-In(2)S(3) nanowires is about 60 nm with the length of about 6-8 mum. Moreover, the aspect ratio of beta-In(2)S(3) nanowires is up to 117. An EDS analysis revealed the beta-In(2)S(3) nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the beta-In(2)S(3) nanowire is tetragonal polycrystalline. The direct band gap energy (E(g)) is 2.40 eV from the optical measurement, and it is reasonable with literature.