Structure Optimization of Planar Nanoscale Vacuum Channel Transistor.

Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.

Optimization of a Field Emission Electron Source Based on Nano-Vacuum Channel Structures.

Recent discoveries in the field of nanoscale vacuum channel (NVC) structures have led to potential on-chip electron sources. However, limited research has reported on the structure or material parameters, and the superiority of a nanoscale vacuum channel in an electron source has not been adequately demonstrated. In this paper, we perform the structural optimization design of an NVC-based electron source. First, the structure parameters of a vertical NVC-based electron source are investigated. Moreover, the symmetrical NVC structure is further demonstrated to improve the emission current and effective electron efficiency. Finally, a symmetrical nano-vacuum channel structure is successfully fabricated based on simulations. The results show that the anode current exceeds 15 nA and that the effective electron efficiency exceeds 20%. Further miniaturizing the NVC structures in high integration can be utilized as an on-chip electron source, thereby, illustrating the potential in applications of electron microscopes, miniature X-ray sources and on-chip traveling wave tubes.

High-Performance Blue Quantum Dot Light Emitting Diode via Solvent Optimization Strategy for ZnO Nanoparticles.

Here, we report on the high-performance blue quantum dots (QDs) light-emitting diodes (QLEDs), in which the ZnO nanoparticles (NPs) are employed as the electron transport layer (ETL) and optimized with different alcohol solvents. The experimental results demonstrate that the properties of solvent used for ZnO NPs-such as polarity, viscosity and boiling point-play a crucial role in the quality of film where they modulate the electron injection across the QDs/ETL interface. The maximum current efficiency of 3.02 cd/A and external quantum efficiency (EQE) of 3.3% are achieved for blue QLEDs with ZnO NPs dispersed in butanol, exhibiting obvious enhancement compared with the other solvents. This work provides a new method to select proper solvent for ETL which can further improve the device performance.

Reply to the 'Comment on "Design and circuit simulation of nanoscale vacuum channel transistors"' by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D.

Prof. Forbes takes a critical view of our paper on nanoscale vacuum channel transistors (NVCTs), arguing mainly about the weaknesses in the theory of field electron emission. On the one hand, we agree with the theoretical derivation details given by Prof. Forbes, and we would correct the "simplified formula" accordingly (eqn (2)-(5)). On the other hand, the main part of our work focuses on the simulation results of structural parameters and circuit behavior, which is not involved with eqn (2)-(5). Thus, the reported results and conclusions remain reliable.

Nanoscale vacuum channel transistor with in-plane collection structure.

High quality nanoscale vacuum channel transistors (NVCTs) enable carriers to transport ballistically through the vacuum nanogap, achieving high speed and frequency characteristic which are essential for on-chip vacuum electronic devices. However, the studies to date have been largely confined to explore the common electrical performance, while the fast response characteristic of NVCTs remains a challenge. We report the fabrication of metal-based NVCT, with sub-100 nm vacuum channel and specific designed in-plane collection structure which can enhance the emission or collection efficiency of the electrons simultaneously. Importantly, the demonstration of a rise/fall time of less than 100 ns is achieved, which is compatible with those high-quality solid-state transistors based on low-dimensional materials. Moreover, the device can also retain excellent electrical performance, exhibiting a high drive current (>10 µA), low work voltage (<10 V) and high on/off current ratio (>104). The verification of fast temporal response of NVCT makes a significant step towards on-chip vacuum electronics with high speed and integration.

Design and circuit simulation of nanoscale vacuum channel transistors.

Nanoscale vacuum channel transistors (NVCTs) are promising candidates in electronics due to their high frequency, fast response and high reliability, and have attracted considerable attention for structural design and optimization. However, conventional modeling for vacuum devices tends to focus on the work function or electric field distribution for an individual structure. Therefore, it is desirable for a new simulation method to explore the function circuits of NVCTs, e.g. high-speed logic circuits. In this study, a complete simulation of the fabrication, structure design and circuit simulation of NVCTs is demonstrated. First, the fabrication process was designed to be compatible with current semiconductor technology. Then, the "fabricated" structure was directly employed to investigate the influence of the structure parameters on the electrical performance. Furthermore, we explore the possibility of implementing an invert circuit with a single optimal NVCT. To the best of our knowledge, this is the first demonstration of a vacuum-state invertor with a circuit-simulation module in which NVCT functions as a conventional triode or FET. These simulation results illustrate the feasibility of integrating NVCTs into functional circuits and provide a theoretical method for future on-chip vacuum transistors applied in logic or radio-frequency (RF) devices.