Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam.

X-ray topography is a powerful method for analyzing crystal defects and strain in crystalline materials non-destructively. However, conventional X-ray topography uses simple X-ray diffraction images, which means depth information on defects and dislocations cannot be obtained. We have therefor developed a novel three-dimensional micro-X-ray topography technique (3D µ-XRT) that combines Bragg-case section topography with focused sheet-shaped X-rays. The depth resolution of the 3D µ-XRT depends mainly on the focused X-ray beam size and enables non-destructive observation of internal defects and dislocations with an accuracy on the order of 1 µm. The demonstrative observation of SiC power device chips showed that stacking faults, threading screw, threading edge, and basal plane dislocations were clearly visualized three-dimensionally with a depth accuracy of 1.3 µm. 3D µ-XRT is a promising new approach for highly sensitive and non-destructive analysis of material crystallinity in a three-dimensional manner.

Advanced X-ray imaging at beamline 07 of the SAGA Light Source.

The SAGA Light Source provides X-ray imaging resources based on high-intensity synchrotron radiation (SR) emitted from the superconducting wiggler at beamline 07 (BL07). By combining quasi-monochromatic SR obtained by the newly installed water-cooled metal filter and monochromatic SR selected by a Ge double-crystal monochromator (DCM) with high-resolution lens-coupled X-ray imagers, fast and low-dose micro-computed tomography (CT), fast phase-contrast CT using grating-based X-ray interferometry, and 2D micro-X-ray absorption fine structure analysis can be performed. In addition, by combining monochromatic SR obtained by a Si DCM with large-area fiber-coupled X-ray imagers, high-sensitivity phase-contrast CT using crystal-based X-ray interferometry can be performed. Low-temperature CT can be performed using the newly installed cryogenic system, and time-resolved analysis of the crystallinity of semiconductor devices in operation can be performed using a time-resolved topography system. The details of each instrument and imaging method, together with exemplary measurements, are presented.