Enhanced photoresponse of Cu2ZnSnS4 absorber thin films fabricated using multi-metallic stacked nanolayers.

Cu2ZnSnS4 (CZTS) thin films have attracted considerable attention as potential candidates for photovoltaic absorber materials. In a vacuum deposition technique, a sputtering stacked metallic layer followed by a thermal process for sulfur incorporation is used to obtain high-quality CZTS thin films. In this work, for fabricating CZTS thin films, we have done a 3LYS (3 layers), 6LYS, and 9LYS sequential deposition of Sn/ZnS/Cu metal stack (via. metallic stacked nanolayer precursors) onto Mo-coated corning glass substrate via. RF-sputtering. The prepared thin films were sulfurized in a tubular furnace at 550 °C in a gas mixture of 5% H2S + 95% Ar for 10 min. We further investigated the impact of the Sn/ZnS/Cu metal stacking layers on the quality of the thin film based on its response to light because metal inter-diffusion during sulfurization is unavoidable. The inter-diffusion of precursors is low in a 3-layer stack sample, limiting the fabricated film's performance. CZTS films with 6-layer and 9-layer stacks result in an improved photocurrent density of ∼38 µA cm-2 and ∼82 µA cm-2, respectively, compared to a 3-layer sample which has a photocurrent density of ∼19 µA cm-2. This enhancement can be attributed to the 9-layer approach's superior inter-diffusion of metallic precursors and compact, smooth CZTS microstructure evolution.

Self-biased photodetector using 2D layered bismuth triiodide (BiI3) prepared using the spin coating method.

Layered bismuth triiodide (BiI3) is a 2D material that has emerged as an ideal choice for optical sensors. Although BiI3 has been prepared using vacuum-based deposition techniques, there is a dearth of research studies on synthesizing this material using chemical route. The present work uses a facile spin coating method with varying rotation speeds (rpm) to fabricate BiI3 material thin films for photodetection applications. The structural, optical, and morphological study of BiI3 thin films prepared at 3000-6000 rpm were investigated. XRD analysis indicates formation of BiI3 films and revealed that BiI3 has a rhombohedral crystal structure. FESEM analysis showed that BiI3 films prepared at different rpm are homogeneous, dense, and free from cracks, flaws, and protrusions. In addition, films show an island-like morphology with grain boundaries having different grain sizes, micro gaps, and the evolution of the granular morphology of BiI3 particles. The UV spectroscopy and photoluminescence analysis revealed that BiI3 films strongly absorb light in the visible region of spectra with a high absorption coefficient of ∼104 cm-1, have an optical band gap of ∼1.51 eV. A photodetector was realised using fabricated BiI3 film obtained at an optimum spin speed of 4000 rpm. It showed rapid rise and decay times of 0.4 s and 0.5 s, a responsivity of ∼100 µA W-1, external quantum efficiency of 2.1 × 10-4%, and detectivity of ∼3.69 × 106 Jones at a bias voltage of 0 V. Our results point towards a new direction for layered 2D BiI3 materials for the application in self-biased photodetectors.

Synthesis, Structural and Optical Properties of ZrBi2Se6 Nanoflowers: A Next-Generation Semiconductor Alloy Material for Optoelectronic Applications.

ZrBi2Se6 nanoflower-like morphology was successfully prepared using a solvothermal method, followed by a quenching process for photoelectrochemical water splitting applications. The formation of ZrBi2Se6 was confirmed by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The estimated value of work function and band gap were found to be 5.5 and 2.26 eV measured using diffuse reflection spectroscopy and ultraviolet photoelectron spectroscopy, suggesting the potential candidate for water splitting. The highest current density of 9.7 µA/cm2 has been observed for the ZrBi2Se6 photoanode for the applied potential of 0.5 V vs SCE. The flat-band potential value was -0.46 V, and the 1.85 nm width of the depletion region is estimated from the Mott-Schottky (MS) analysis. It also reveals that the charge carrier density for the ZrBi2Se6 nanoflowers is 4.8 × 1015 cm-3. The negative slope of the MS plot indicates that ZrBi2Se6 is a p-type semiconductor. It was observed that ZrBi2Se6 nanoflowers had a high charge transfer resistance of ∼730 kΩ and equivalent capacitance of ∼40 nF calculated using electrochemical impedance spectroscopy (EIS) measurements. Using chronoamperometry, the estimated rise time and decay time were 50 ms and 0.25 s, respectively, which reveals the fast photocurrent response and excellent PEC performance of the ZrBi2Se6 photoanode. Furthermore, an attempt has been made to explain the PEC activity of ZrBi2Se6 nanoflowers using an energy band diagram. Thus, the initial results on ZrBi2Se6 nanoflowers appear promising for the PEC activity toward water splitting.