Low connector-to-connector loss through silicon photonic chips using ultra-low loss splicing of SMF-28 to high numerical aperture fibers.

Here we present extremely low connector-to-connector loss (≤3 dB) through silicon photonic chips using ultra-low loss (≤0.15 dB) splicing between SMF-28 and ultra-high numerical aperture (UHNA) fibers. The small MFD from the UHNA fibers enables strong coupling to hybrid TE/TM edge couplers achieving TM (TE) losses of 1.25 (2.35) dB per coupler and low polarization-dependent loss. Mode coupling simulations and tolerance are investigated to understand performance.

Thermal radiation control from hot graphene electrons coupled to a photonic crystal nanocavity.

Controlling thermal radiation is central in a range of applications including sensing, energy harvesting, and lighting. The thermal emission spectrum can be strongly modified through the electromagnetic local density of states (EM LDOS) in nanoscale-patterned metals and semiconductors. However, these materials become unstable at high temperature, preventing improvements in radiative efficiency and applications such as thermophotovoltaics. Here, we report stable high-temperature thermal emission based on hot electrons (>2000 K) in graphene coupled to a photonic crystal nanocavity, which strongly modifies the EM LDOS. The electron bath in graphene is highly decoupled from lattice phonons, allowing a comparatively cool temperature (700 K) of the photonic crystal nanocavity. This thermal decoupling of hot electrons from the LDOS-engineered substrate opens a broad design space for thermal emission control that would be challenging or impossible with heated nanoscale-patterned metals or semiconductor materials.

Fast thermal relaxation in cavity-coupled graphene bolometers with a Johnson noise read-out.

High sensitivity, fast response time and strong light absorption are the most important metrics for infrared sensing and imaging. The trade-off between these characteristics remains the primary challenge in bolometry. Graphene with its unique combination of a record small electronic heat capacity and a weak electron-phonon coupling has emerged as a sensitive bolometric medium that allows for high intrinsic bandwidths1-3. Moreover, the material's light absorption can be enhanced to near unity by integration into photonic structures. Here, we introduce an integrated hot-electron bolometer based on Johnson noise readout of electrons in ultra-clean hexagonal-boron-nitride-encapsulated graphene, which is critically coupled to incident radiation through a photonic nanocavity with Q = 900. The device operates at telecom wavelengths and shows an enhanced bolometric response at charge neutrality. At 5 K, we obtain a noise equivalent power of about 10 pW Hz-1/2, a record fast thermal relaxation time, <35 ps, and an improved light absorption. However the device can operate even above 300 K with reduced sensitivity. We work out the performance mechanisms and limits of the graphene bolometer and give important insights towards the potential development of practical applications.

Ultrafast Graphene Light Emitters.

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge-carrier dynamics in graphene and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460% enhancement compared to the gray-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2000 K under ambient conditions as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes under electrical excitation. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

High-resolution optical spectroscopy using multimode interference in a compact tapered fibre.

Optical spectroscopy is a fundamental tool in numerous areas of science and technology. Much effort has focused on miniaturizing spectrometers, but thus far at the cost of spectral resolution and broad operating range. Here we describe a compact spectrometer that achieves both high spectral resolution and broad bandwidth. The device relies on imaging multimode interference from leaky modes along a multimode tapered optical fibre, resulting in spectrally distinguishable spatial patterns over a wide range of wavelengths from 500 to 1,600 nm. This tapered fibre multimode interference spectrometer achieves a spectral resolution down to 40 pm in the visible spectrum and 10 pm in the near-infrared spectrum (corresponding to resolving powers of 10(4)-10(5)). Multimode interference spectroscopy is suitable in a variety of device geometries, including planar waveguides in a broad range of transparent materials.

Photonic crystal cavity-assisted upconversion infrared photodetector.

We describe an upconversion infrared photodetector assisted by a gallium phosphide photonic crystal nanocavity directly coupled to a silicon photodiode. The strongly cavity-enhanced second harmonic signal radiating from the gallium phosphide membrane can thus be efficiently collected by the silicon photodiode, which promises a high photoresponsivity of the upconversion detector as 0.81 A/W with the coupled power of 1W. The integrated upconversion photodetector also functions as a compact autocorrelator with sub-ps resolution for measuring pulse width and chirp.

High-speed electro-optic modulator integrated with graphene-boron nitride heterostructure and photonic crystal nanocavity.

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.

Controlling the spontaneous emission rate of monolayer MoS2 in a photonic crystal nanocavity.

We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS2) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS2 monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS2 emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of the MoS2 SE rate exceeding a factor of 70.

Revealing anisotropic strain in exfoliated graphene by polarized Raman spectroscopy.

We report on a polarized Raman study on mechanically cleaved single-layer graphene films. Under a specific orientation of scattering measurement, the width and position of the G peak change with the incident polarization direction, while the integrated intensity of that is unaltered. This phenomenon is explained by a proposed mode in which the peak is contributed by a mixture of un-, compressive-, and tensile-strained G sub-modes. The compression and tension are both uniaxial and approximately perpendicular to each other. They are undesigned and located in either separated or overlapped sub-areas within the probed local region. Compared to the unstrained wavenumber of 1580 cm(-1), compression induces a blue shift while tension causes a red one. The sub-modes correlated with the light polarization through different relationships split the G peak into three sub-ones. We develop a method to quantitatively analyze the positions, widths, intensities, and polarization dependences of sub-peaks. This analysis quantitatively reveals local strain, which changes with the detected area of a graphene film. The method presented here can be extended to detect the strain distribution in the film and thus is a promising technology for graphene characterization.

High-contrast electrooptic modulation of a photonic crystal nanocavity by electrical gating of graphene.

We demonstrate high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A silicon air-slot nanocavity provides strong overlap between the resonant optical field and graphene. Tuning the Fermi energy of the graphene layer to 0.85 eV enables strong control of its optical conductivity at telecom wavelengths, which allows modulation of cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. The cavity resonance at 1570 nm is found to undergo a shift in wavelength of nearly 2 nm, together with a 3-fold increase in quality factor. These observations enable a cavity-enhanced determination of graphene's complex optical sheet conductivity at different doping levels. Our simple device demonstrates the feasibility of high-contrast, low-power, and frequency-selective electro-optic modulators in graphene-integrated silicon photonic integrated circuits.

Layer-dependent morphologies of silver on n-layer graphene.

The distributions of sizes of silver nanoparticles that were deposited on monolayer, bilayer, and trilayer graphene films were observed. Deposition was carried out by thermal evaporation and the graphene films, placed on SiO2/Si substrates, were obtained by the mechanical splitting of graphite. Before the deposition, optical microscopy and Raman spectroscopy were utilized to identify the number of the graphene layers. After the deposition, scanning electron microscopy was used to observe the morphologies of the particles. Systematic analysis revealed that the average sizes of the nanoparticles increased with the number of graphene layers. The density of nanoparticles decreased as the number of graphene layers increased, revealing a large variation in the surface diffusion strength of nanoparticles on the different substrates. The mechanisms of formation of these layer-dependent morphologies of silver on n-layer graphene are related to the surface free energy and surface diffusion of the n-layer graphene. The effect of the substrate such as SiO2/Si was investigated by fabricating suspended graphene, and the size and density were similar to those of supported graphene. Based on a comparison of the results, the different morphologies of the silver nanoparticles on different graphene layers were theorized to be caused only by the variation of the diffusion barriers with the number of layers of graphene.

Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates.

In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping, suppressed carrier scattering, and reduced thermal activation of resistivity at room temperature were observed. Most interestingly, the remarkable magnetotransport of graphene devices with pronounced quantum Hall effect, strong Shubnikov-de Haas oscillations, a nonzero Berry's phase, and a short carrier scattering time also confirms the high quality of graphene on this ultrasmooth organic SAM-modified platform. The high-performance graphene transistors on the solution-processable OTS SAM-functionalized SiO(2)/Si substrates are promising for the future development of large-area and low-cost fabrications of graphene-based nanoelectronics.

High-quality graphene p-n junctions via resist-free fabrication and solution-based noncovalent functionalization.

An essential issue in graphene nanoelectronics is to engineer the carrier type and density and still preserve the unique band structure of graphene. We report the realization of high-quality graphene p-n junctions by noncovalent chemical functionalization. A generic scheme for the graphene p-n junction fabrication is established by combining the resist-free approach and spatially selective chemical modification process. The effectiveness of the chemical functionalization is systematically confirmed by surface topography and potential measurements, spatially resolved Raman spectroscopic imaging, and transport/magnetotransport measurements. The transport characteristics of graphene p-n junctions are presented with observations of high carrier mobilities, Fermi energy difference, and distinct quantum Hall plateaus. The chemical functionalization of graphene p-n junctions demonstrated in this study is believed to be a feasible scheme for modulating the doping level in graphene for future graphene-based nanoelectronics.