Sequential reduction of the silicon single-electron transistor structure to atomic scale.

Here we present an original CMOS compatible fabrication method of a single-electron transistor structure with extremely small islands, formed by solitary phosphorus dopants in the silicon nanobridge. Its key feature is the controllable size reduction of the nanobridge in sequential cycles of low energy isotropic reactive ion etching that results in a decreased number of active charge centers (dopants) in the nanobridge from hundreds to a single one. Electron transport through the individual phosphorous dopants in the silicon lattice was studied. The final transistor structure demonstrates a Coulomb blockade voltage of ∼30 mV and nanobridge size estimated as [Formula: see text]. Analysis of current stability diagrams shows that electron transport in samples after the final etching stage had a single-electron nature and was carried through three phosphorus atoms. The fabrication method of the demonstrated structure allows it to be modified further by various impurities in additional etching and implantation cycles.

Single-electron tunneling through an individual arsenic dopant in silicon.

We report the single-electron tunneling behaviour of a silicon nanobridge where the effective island is a single As dopant atom. The device is a gated silicon nanobridge with a thickness and width of ∼20 nm, fabricated from a commercially available silicon-on-insulator wafer, which was first doped with As atoms and then patterned using a unique CMOS-compatible technique. Transport measurements reveal characteristic Coulomb diamonds whose size decreases with gate voltage. Such a dependence indicates that the island of the single-electron transistor created is an individual arsenic dopant atom embedded in the silicon lattice between the source and drain electrodes, and furthermore, can be explained by the increase of the localisation region of the electron wavefunction when the higher energy levels of the dopant As atom become occupied. The charge stability diagram of the device shows features which can be attributed to adjacent dopants, localised in the nanobridge, acting as charge traps. From the measured device transport, we have evaluated the tunnel barrier properties and obtained characteristic device capacitances. The fabrication, control and understanding of such "single-atom" devices marks a further step towards the implementation of single-atom electronics.

[Frequency range of the auditory effect of UHF]. / Chastotnyi diapazon slukhovogo éffekta SVCh.

Zero beats of radiosound with an acoustic signal from an electrodynamic emitter in the frequency range up to 8 kHz were recorded in a natural experiment, which were not obtained earlier. It has been shown that the zero beats between the acoustic tonal signal and the first harmonics of the impulse succession of UHF are recorded in the points which correspond to low values on the threshold curve of UHF auditory effect.

[Study of the characteristics of the effect of radio-sound using spherical models]. / Issledovanie osobennostei éffekta radiozvuka s pomoshch'iu sfericheskoi modeli.

Experimental data are presented on sound wave excitement in liquid sphere models by pulse HF-fields and interpreted in relation to microwave auditory effects.

[A physical model of acoustic effects of ultrahigh frequency fields on biological systems]. / K voprosu o fizicheskom modelirovanii akusticheskikh éffektov pri deistvii SVCh-polei na biologicheskie sistemy.

A physical model of radiosound based on the stimulation of mechanical oscillations in liquid media at adsorption of SHF impulse energy is presented. It is shown that a limited liquid volume can be considered as an acoustic resonator with self oscillation frequency. At definite relationships between the succession frequency and impulse duration interference takes place. Oscillograms of recorded mechanical oscillations are presented. The low frequency type of radiosound is explained. A conclusion is made concerning the reliability of the proposed method for investigating radiosound.