Waveguide-integrated twisted bilayer graphene photodetectors.

Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W-1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s-1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.

Versatile photonic molecule switch in multimode microresonators.

Harnessing optical supermode interaction to construct artificial photonic molecules has uncovered a series of fundamental optical phenomena analogous to atomic physics. Previously, the distinct energy levels and interactions in such two-level systems were provided by coupled microresonators. The reconfigurability is limited, as they often require delicate external field stimuli or mechanically altering the geometric factors. These highly specific approaches also limit potential applications. Here, we propose a versatile on-chip photonic molecule in a multimode microring, utilizing a flexible regulation methodology to dynamically control the existence and interaction strength of spatial modes. The transition between single/multi-mode states enables the "switched-off/on" functionality of the photonic molecule, supporting wider generalized applications scenarios. In particular, "switched-on" state shows flexible and multidimensional mode splitting control in aspects of both coupling strength and phase difference, equivalent to the a.c. and d.c. Stark effect. "Switched-off" state allows for perfect low-loss single-mode transition (Qi ~ 10 million) under an ultra-compact bend size (FSR ~ 115 GHz) in a foundry-based silicon microring. It breaks the stereotyped image of the FSR-Q factor trade-off, enabling ultra-wideband and high-resolution millimeter-wave photonic operations. Our demonstration provides a flexible and portable solution for the integrated photonic molecule system, extending its research scope from fundamental physics to real-world applications such as nonlinear optical signal processing and sixth-generation wireless communication.

Slow-light silicon modulator with 110-GHz bandwidth.

Silicon modulators are key components to support the dense integration of electro-optic functional elements for various applications. Despite numerous advances in promoting the modulation speed, a bandwidth ceiling emerges in practices and becomes an obstacle toward Tbps-level throughput on a single chip. Here, we demonstrate a compact pure silicon modulator that shatters present bandwidth ceiling to 110 gigahertz. The proposed modulator is built on a cascade corrugated waveguide architecture, which gives rise to a slow-light effect. By comprehensively balancing a series of merits, the modulators can benefit from the slow light for better efficiency and compact size while remaining sufficiently high bandwidth. Consequently, we realize a 110-gigahertz modulator with 124-micrometer length, enabling 112 gigabits per second on-off keying operation. Our work proves that silicon modulators with 110 gigahertz are feasible, thus shedding light on its potentials in ultrahigh bandwidth applications such as optical interconnection and photonic machine learning.

Harnessing microcomb-based parallel chaos for random number generation and optical decision making.

Optical chaos is vital for various applications such as private communication, encryption, anti-interference sensing, and reinforcement learning. Chaotic microcombs have emerged as promising sources for generating massive optical chaos. However, their inter-channel correlation behavior remains elusive, limiting their potential for on-chip parallel chaotic systems with high throughput. In this study, we present massively parallel chaos based on chaotic microcombs and high-nonlinearity AlGaAsOI platforms. We demonstrate the feasibility of generating parallel chaotic signals with inter-channel correlation <0.04 and a high random number generation rate of 3.84 Tbps. We further show the application of our approach by demonstrating a 15-channel integrated random bit generator with a 20 Gbps channel rate using silicon photonic chips. Additionally, we achieved a scalable decision-making accelerator for up to 256-armed bandit problems. Our work opens new possibilities for chaos-based information processing systems using integrated photonics, and potentially can revolutionize the current architecture of communication, sensing and computations.

Quantum decoherence of dark pulses in optical microresonators.

Quantum fluctuations disrupt the cyclic motions of dissipative Kerr solitons (DKSs) in nonlinear optical microresonators and consequently cause timing jitter of the emitted pulse trains. This problem is translated to the performance of several applications that employ DKSs as compact frequency comb sources. Recently, device manufacturing and noise reduction technologies have advanced to unveil the quantum properties of DKSs. Here we investigate the quantum decoherence of DKSs existing in normal-dispersion microresonators known as dark pulses. By virtue of the very large material nonlinearity, we directly observe the quantum decoherence of dark pulses in an AlGaAs-on-insulator microresonator, and the underlying dynamical processes are resolved by injecting stochastic photons into the microresonators. Moreover, phase correlation measurements show that the uniformity of comb spacing of quantum-limited dark pulses is better than 1.2 × 10-16 and 2.5 × 10-13 when normalized to the optical carrier frequencies and repetition frequencies, respectively. Comparing DKSs generated in different material platforms explicitly confirms the advantages of dark pulses over bright solitons in terms of quantum-limited coherence. Our work establishes a critical performance assessment of DKSs, providing guidelines for coherence engineering of chip-scale optical frequency combs.

Microcomb-based integrated photonic processing unit.

The emergence of parallel convolution-operation technology has substantially powered the complexity and functionality of optical neural networks (ONN) by harnessing the dimension of optical wavelength. However, this advanced architecture faces remarkable challenges in high-level integration and on-chip operation. In this work, convolution based on time-wavelength plane stretching approach is implemented on a microcomb-driven chip-based photonic processing unit (PPU). To support the operation of this processing unit, we develop a dedicated control and operation protocol, leading to a record high weight precision of 9 bits. Moreover, the compact architecture and high data loading speed enable a preeminent photonic-core compute density of over 1 trillion of operations per second per square millimeter (TOPS mm-2). Two proof-of-concept experiments are demonstrated, including image edge detection and handwritten digit recognition, showing comparable processing capability compared to that of a digital computer. Due to the advanced performance and the great scalability, this parallel photonic processing unit can potentially revolutionize sophisticated artificial intelligence tasks including autonomous driving, video action recognition and image reconstruction.

Linearity of a silicon-based graphene electro-absorption modulator.

A silicon-based graphene modulator, holding the advantages of high modulation efficiency, high speed, and being ultra-compact, is regarded as a promising candidate for next-generation communication networks. Although the properties involved for optical communications have been widely studied, very few works evaluate the performance required for the microwave scenarios. Here, for the first time, to the best of our knowledge, the linearity of silicon-based graphene electro-absorption modulator (EAM) is analyzed and experimentally characterized through spurious free dynamic range (SFDR) with 82.5 dB·Hz1/2 and 100.3 dB·Hz2/3. Further calculations reveal that a higher SFDR value could be achieved through optimizing the bias voltage. Variations of capacitor structural parameters have little influence on the linearity. Such performance leads to the first, to the best of our knowledge, demonstration of a Gbps-level pulse-amplitude 4-level modulation scheme (PAM-4) eye diagram in a silicon-based graphene modulator.

Microcomb-driven silicon photonic systems.

Microcombs have sparked a surge of applications over the past decade, ranging from optical communications to metrology1-4. Despite their diverse deployment, most microcomb-based systems rely on a large amount of bulky elements and equipment to fulfil their desired functions, which is complicated, expensive and power consuming. By contrast, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner5-7, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here we combine these two technologies by using a power-efficient and operationally simple aluminium-gallium-arsenide-on-insulator microcomb source to drive complementary metal-oxide-semiconductor SiPh engines. We present two important chip-scale photonic systems for optical data transmission and microwave photonics, respectively. A microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude four-level modulation scheme with a two-terabit-per-second aggregate rate, and a highly reconfigurable microwave photonic filter with a high level of integration is constructed using a time-stretch approach. Such synergy of a microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems.

An ultra-compact polarization-insensitive slot-strip mode converter.

Integrated waveguides with slot structures have attracted increasing attention due to their advantages of tight mode confinement and strong light-matter interaction. Although extensively studied, the issue of mode mismatch with other strip waveguide-based optical devices is a huge challenge that prevents integrated waveguides from being widely utilized in large-scale photonic-based circuits. In this paper, we demonstrate an ultra-compact low-loss slot-strip converter with polarization insensitivity based on the multimode interference (MMI) effect. Sleek sinusoidal profiles are adopted to allow for smooth connection between the slot and strip waveguide, resulting reflection reduction. By manipulating the MMI effect with structure optimization, the self-imaging positions of the TE0 and TM0 modes are aligned with minimized footprint, leading to low-loss transmission for both polarizations. The measurement results show that high coupling efficiencies of - 0.40 and - 0.64 dB are achieved for TE0 and TM0 polarizations, respectively. The device has dimensions as small as 1.1 µm × 1.2 µm and composed of factory-available structures. The above characteristics of our proposed compact slot-strip converter makes it a promising device for future deployment in multi-functional integrated photonics systems.

Optical coherent dot-product chip for sophisticated deep learning regression.

Optical implementations of neural networks (ONNs) herald the next-generation high-speed and energy-efficient deep learning computing by harnessing the technical advantages of large bandwidth and high parallelism of optics. However, due to the problems of the incomplete numerical domain, limited hardware scale, or inadequate numerical accuracy, the majority of existing ONNs were studied for basic classification tasks. Given that regression is a fundamental form of deep learning and accounts for a large part of current artificial intelligence applications, it is necessary to master deep learning regression for further development and deployment of ONNs. Here, we demonstrate a silicon-based optical coherent dot-product chip (OCDC) capable of completing deep learning regression tasks. The OCDC adopts optical fields to carry out operations in the complete real-value domain instead of in only the positive domain. Via reusing, a single chip conducts matrix multiplications and convolutions in neural networks of any complexity. Also, hardware deviations are compensated via in-situ backpropagation control provided the simplicity of chip architecture. Therefore, the OCDC meets the requirements for sophisticated regression tasks and we successfully demonstrate a representative neural network, the AUTOMAP (a cutting-edge neural network model for image reconstruction). The quality of reconstructed images by the OCDC and a 32-bit digital computer is comparable. To the best of our knowledge, there is no precedent of performing such state-of-the-art regression tasks on ONN chips. It is anticipated that the OCDC can promote the novel accomplishment of ONNs in modern AI applications including autonomous driving, natural language processing, and scientific study.

1/f-noise-free optical sensing with an integrated heterodyne interferometer.

Optical evanescent sensors can non-invasively detect unlabeled nanoscale objects in real time with unprecedented sensitivity, enabling a variety of advances in fundamental physics and biological applications. However, the intrinsic low-frequency noise therein with an approximately 1/f-shaped spectral density imposes an ultimate detection limit for monitoring many paramount processes, such as antigen-antibody reactions, cell motions and DNA hybridizations. Here, we propose and demonstrate a 1/f-noise-free optical sensor through an up-converted detection system. Experimentally, in a CMOS-compatible heterodyne interferometer, the sampling noise amplitude is suppressed by two orders of magnitude. It pushes the label-free single-nanoparticle detection limit down to the attogram level without exploiting cavity resonances, plasmonic effects, or surface charges on the analytes. Single polystyrene nanobeads and HIV-1 virus-like particles are detected as a proof-of-concept demonstration for airborne biosensing. Based on integrated waveguide arrays, our devices hold great potentials for multiplexed and rapid sensing of diverse viruses or molecules.

Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics.

Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear and nonlinear devices, passive and active devices, and associated applications. Low propagation loss is essential for integrated photonics, particularly in nonlinear applications. However, achieving low-loss and high-confinement AlGaAs photonic integrated circuits poses a challenge. Here we show an effective reduction of surface-roughness-induced scattering loss in fully etched high-confinement AlGaAs-on-insulator nanowaveguides by using a heterogeneous wafer-bonding approach and optimizing fabrication techniques. We demonstrate ultrahigh-quality AlGaAs microring resonators and realize quality factors up to 3.52 × 106 and finesses as high as 1.4 × 104. We also show ultra-efficient frequency comb generations in those resonators and achieve record-low threshold powers on the order of ∼20 µW and ∼120 µW for the resonators with 1 THz and 90 GHz free-spectral ranges, respectively. Our result paves the way for the implementation of AlGaAs as a novel integrated material platform specifically for nonlinear photonics and opens a new window for chip-based efficiency-demanding practical applications.

On-chip high-efficiency wavelength multicasting of PAM3/PAM4 signals using low-loss AlGaAs-on-insulator nanowaveguides.

Nonlinear optics-based optical signal processing (OSP) could potentially increase network flexibility because of its transparency, tunability, and large bandwidth. A low-loss, high nonlinearity, and compact integrated material platform is always the pursuit of OSP. In this Letter, a high-efficiency, one-to-six wavelength multicasting of 10 Gbaud pulse-amplitude modulation (PAM3/PAM4) signals using a 6 cm long Al0.2Ga0.8As-on-insulator nanowaveguide is experimentally demonstrated for the first time, to the best of our knowledge. The low-loss, combined with the high nonlinear coefficient of the AlGaAsOI platform, enables us to achieve -11.2dB average conversion efficiency clear eye diagrams and <2.1dB power penalty at KP4-forward error correction threshold (2.4×10-4) for all the output PAM3/PAM4 multicasting channels. This result points to a new generation of nonlinear OSP photonic integrated circuits.

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators.

Recent advances in nonlinear optics have revolutionized integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials feature much higher nonlinear coefficients and convenience in active integration, they have suffered from high waveguide losses that prevent the realization of efficient nonlinear processes on-chip. Here, we challenge this status quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 106. Such a high quality factor, combined with high nonlinear coefficient and small mode volume, enabled us to demonstrate a Kerr frequency comb threshold of only ∼36 µW in a resonator with a 1 THz free spectral range, ∼100 times lower compared to that in previous semiconductor platforms. Moreover, combs with broad spans (>250 nm) have been generated with a pump power of ∼300 µW, which is lower than the threshold power of state-of the-art dielectric micro combs. A soliton-step transition has also been observed for the first time in an AlGaAs resonator.

Numerical investigation of the linearity of graphene-based silicon waveguide modulator.

We investigated the linearity of graphene-based silicon waveguide modulators used in microwave photonics links. A theoretical model was developed to systematically analyze the linearity performance for the second-order harmonic distortions (SHD2) and the third-order intermodulation distortions (IMD3). For the graphene-based silicon waveguide electro-absorption (EA) modulator, the distortions were suppressed through bias optimization. As a result, the maximal spurious free dynamic range (SFDR) obtained for SHD2 and IMD3 were 105.9 dB ·Hz1/2 and 117.8 dB·Hz2/3, respectively. For the graphene-based silicon waveguide electro-refraction (ER) phase modulator, SHD2 was fully eliminated through the push-pull modulation and quadrature biasing, while the remaining IMD3 term was linearized by the proper adjustment of the bias voltage and phase shifter length to obtain an ultrahigh SFDR of 130 dB ·Hz2/3. Moreover, the graphene-based silicon waveguide ER modulator is more compact and tolerant to bias errors than a pure silicon modulator. These results reveal that the graphene-based silicon waveguide EA and ER modulators can be potentially utilized in integrated microwave photonics.

Significantly High Modulation Efficiency of Compact Graphene Modulator Based on Silicon Waveguide.

We theoretically and experimentally demonstrate a significantly large modulation efficiency of a compact graphene modulator based on a silicon waveguide using the electro refractive effect of graphene. The modulation modes of electro-absorption and electro-refractive can be switched with different applied voltages. A high extinction ratio of 25 dB is achieved in the electro-absorption modulation mode with a driving voltage range of 0 V to 1 V. For electro-refractive modulation, the driving voltage ranges from 1 V to 3 V with a 185-pm spectrum shift. The modulation efficiency of 1.29 V · mm with a 40-µm interaction length is two orders of magnitude higher than that of the first reported graphene phase modulator. The realisation of phase and intensity modulation with graphene based on a silicon waveguide heralds its potential application in optical communication and optical interconnection systems.