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1.
Opt Express ; 27(8): 11312-11322, 2019 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-31052977

RESUMO

We demonstrate frequency modulation (FM) in an external cavity (EC) III-V/silicon laser, comprising a reflective semiconductor optical amplifier (RSOA) and a silicon nitride (SiN) waveguide vertically coupled to a 2D silicon photonic crystal (PhC) cavity. The PhC cavity acts as a tunable narrowband reflector giving wavelength selectivity. The FM was achieved by thermo-optical modulation of the reflector via a p-n junction. Single-mode operation was ensured by the short cavity length, overlapping only one longitudinal laser mode with the reflector. We investigate the effect of reflector modulation theoretically and experimentally and predict a substantial tracking of the resonator by the laser frequency with very small intensity modulation (IM).

2.
Appl Opt ; 57(22): E218-E223, 2018 Aug 01.
Artigo em Inglês | MEDLINE | ID: mdl-30117905

RESUMO

In this paper, we show the experimental results of a thermally stable Si3N4 external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 µm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of Si3N4 Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15-62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances' thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.

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