Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2.

Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride (Si3N4) has emerged as a leading on-chip platform. To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si3N4 waveguide layer used is typically thick (>∼700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave-spanning SCG in a thinner moderate-confinement 400-nm Si3N4 platform using a highly nonlinear tellurium oxide (TeO2) coating. An octave supercontinuum spanning from 0.89 to 2.11 µm is achieved at a low peak power of 258 W using a 100-fs laser centered at 1565 nm. Our numerical simulations agree well with the experimental results giving a nonlinear parameter of 2.5 ± 0.5 W-1m-1, an increase by a factor of 2.5, when coating the Si3N4 waveguide with a TeO2 film. This work demonstrates highly efficient SCG via effective dispersion engineering and an enhanced nonlinearity in CMOS-compatible hybrid TeO2-Si3N4 waveguides and a promising route to monolithically integrated nonlinear, linear, and active functionalities on a single silicon photonic chip.

Nonlinear Mach-Zehnder interferometer isolator.

Isolators are important devices in optics, especially for low noise systems, as even a small amount of back reflection can be detrimental to the quality of the signal generated by the source impacting downstream applications. Traditionally, magneto-optical materials have been used in isolators for bulk and fiber based optical systems. However, they tend to have high insertion loss, and are complicated to integrate on a photonics chip. Another class of isolators is based on optical nonlinearity that do not require external magnetic bias. However, the devices demonstrated so far suffer from either limited bandwidth, high insertion loss or fabrication complexity. In this work, we demonstrate a monolithic, fully complementary metal-oxide-semiconductor compatible, nonlinear Mach-Zehnder interferometer isolator based on third order optical nonlinearity, that overcomes such issues. In this proof of principle study, we show up to 15 dB isolation with 0.4 dB insertion loss and a device footprint of 0.4 mm2 which can easily be improved on further. The device is broadband and is independent of wavelength, material, and the platform. Not only can such a device be used for integrated optical systems but also for the fibre based optical systems.

Towards CW modelocked laser on chip - a large mode area and NLI for stretched pulse mode locking.

Integrated modelocked lasers with high power are of utmost importance for next generation optical systems that can be field-deployable and mass produced. Here we study fully integrated modelocked laser designs that have the potential to generate ultrashort, high power, and high quality pulses. We explore a large mode area laser for high power pulse generation and study the various mode-locking regimes of dispersion managed soliton pulses in net anomalous and net normal dispersion cavities. Furthermore, we study numerically and experimentally general properties and tunability of a fast integrated saturable absorber based on low loss silicon nitride nonlinear interferometer. We believe this work guides the exploration of the future for integrated high power modelocked lasers.

Broadband 200-nm second-harmonic generation in silicon in the telecom band.

Silicon is well known for its strong third-order optical nonlinearity, exhibiting efficient supercontinuum and four-wave mixing processes. A strong second-order effect that is naturally inhibited in silicon can also be observed, for example, by electrically breaking the inversion symmetry and quasi-phase matching the pump and the signal. To generate an efficient broadband second-harmonic signal, however, the most promising technique requires matching the group velocities of the pump and the signal. In this work, we utilize dispersion engineering of a silicon waveguide to achieve group velocity matching between the pump and the signal, along with an additional degree of freedom to broaden the second harmonic through the strong third-order nonlinearity. We demonstrate that the strong self-phase modulation and cross-phase modulation in silicon help broaden the second harmonic by 200 nm in the O-band. Furthermore, we show a waveguide design that can be used to generate a second-harmonic signal in the entire near-infrared region. Our work paves the way for various applications, such as efficient and broadband complementary-metal oxide semiconductor based on-chip frequency synthesizers, entangled photon pair generators, and optical parametric oscillators.

A Silicon Photonic Data Link with a Monolithic Erbium-Doped Laser.

To meet the increasing demand for data communication bandwidth and overcome the limits of electrical interconnects, silicon photonic technology has been extensively studied, with various photonics devices and optical links being demonstrated. All of the optical data links previously demonstrated have used either heterogeneously integrated lasers or external laser sources. This work presents the first silicon photonic data link using a monolithic rare-earth-ion-doped laser, a silicon microdisk modulator, and a germanium photodetector integrated on a single chip. The fabrication is CMOS compatible, demonstrating data transmission as a proof-of-concept at kHz speed level, and potential data rate of more than 1 Gbps. This work provides a solution for the monolithic integration of laser sources on the silicon photonic platform, which is fully compatible with the CMOS fabrication line, and has potential applications such as free-space communication and integrated LIDAR.

Optical frequency synthesizer with an integrated erbium tunable laser.

Optical frequency synthesizers have widespread applications in optical spectroscopy, frequency metrology, and many other fields. However, their applicability is currently limited by size, cost, and power consumption. Silicon photonics technology, which is compatible with complementary-metal-oxide-semiconductor fabrication processes, provides a low-cost, compact size, lightweight, and low-power-consumption solution. In this work, we demonstrate an optical frequency synthesizer using a fully integrated silicon-based tunable laser. The synthesizer can be self-calibrated by tuning the repetition rate of the internal mode-locked laser. A 20 nm tuning range from 1544 to 1564 nm is achieved with ~10-13 frequency instability at 10 s averaging time. Its flexibility and fast reconfigurability are also demonstrated by fine tuning the synthesizer and generating arbitrary specified patterns over time-frequency coordinates. This work promotes the frequency stability of silicon-based integrated tunable lasers and paves the way toward chip-scale low-cost optical frequency synthesizers.

Supercontinuum generation in varying dispersion and birefringent silicon waveguide.

Ability to selectively enhance the amplitude and maintain high coherence of the supercontinuum signal with long pulses is gaining significance. In this work, an extra degree of freedom afforded by varying the dispersion profile of a waveguide is utilized to selectively enhance supercontinuum. As much as 16 dB signal enhancement in the telecom window and 100 nm of wavelength extension is achieved with a cascaded waveguide, compared to a fixed dispersion waveguide. Waveguide tapering, in particular with increasing width, is determined to have a flatter and more coherent supercontinuum than a fixed dispersion waveguide when longer input pulses are used. Furthermore, due to the strong birefringence of an asymmetric silicon waveguide the supercontinuum signal is broadened by pumping simultaneously with both quasi-transverse electric (TE) and quasi-transverse magnetic (TM) mode in the anomalous dispersion regime. Thus, selective signal generation is obtained by controlling the dispersion for the two modes. Such waveguides offer several advantages over optical fiber as the variation in dispersion can be controlled with greater flexibility in an integrated platform. This work paves the way forward for various applications in fields ranging from medicine to telecom where specific wavelength windows need to be targeted.

Transmissive silicon photonic dichroic filters with spectrally selective waveguides.

Many optical systems require broadband filters with sharp roll-offs for efficiently splitting or combining light across wide spectra. While free space dichroic filters can provide broadband selectivity, on-chip integration of these high-performance filters is crucial for the scalability of photonic applications in multi-octave interferometry, spectroscopy, and wideband wavelength-division multiplexing. Here we present the theory, design, and experimental characterization of integrated, transmissive, 1 × 2 port dichroic filters using spectrally selective waveguides. Mode evolution through adiabatic transitions in the demonstrated filters allows for single cutoff and flat-top responses with low insertion losses and octave-wide simulated bandwidths. Filters with cutoffs around 1550 and 2100 nm are fabricated on a silicon-on-insulator platform with standard complementary metal-oxide-semiconductor processes. A filter roll-off of 2.82 dB nm-1 is achieved while maintaining ultra-broadband operation. This new class of nanophotonic dichroic filters can lead to new paradigms in on-chip communications, sensing, imaging, optical synthesis, and display applications.

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform.

A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped Al2O3 sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two Si3N4 microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 µs and 35 µs for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz, measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz.

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers.

Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al2O3:Ho3+ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al2O3:Ho3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.

Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 µm to beyond 2.4 µm.

Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards unconventional photonics platforms. In this work, we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near- to shortwave-infrared. With input pulses of 18 pJ in energy, the generated signal spans the wavelength range from the edge of the silicon transmission window, approximately 1.06 to beyond 2.4 µm, with a -20 dB bandwidth covering 1.124-2.4 µm. An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ (-35 dB bandwidth). We also measured the coherence over an octave, obtaining , in good agreement with the simulations. In addition, we demonstrate optimization of the third-order dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning signal for nonlinear applications. This research paves the way for applications, such as chip-scale precision spectroscopy, optical coherence tomography, optical frequency metrology, frequency synthesis and wide-band wavelength division multiplexing in the telecom window.

Ultra-narrow-linewidth Al2O3:Er3+ lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform.

We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infra-red wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔνQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (R-SHDI).

Monolithically-integrated distributed feedback laser compatible with CMOS processing.

An optically-pumped, integrated distributed feedback laser is demonstrated using a CMOS compatible process, where a record-low-temperature deposited gain medium enables integration with active devices such as modulators and detectors. A pump threshold of 24.9 mW and a slope efficiency of 1.3 % is demonstrated at the lasing wavelength of 1552.98 nm. The rare-earth-doped aluminum oxide, used as the gain medium in this laser, is deposited by a substrate-bias-assisted reactive sputtering process. This process yields optical quality films with 0.1 dB/cm background loss at the deposition temperature of 250 °C, and therefore is fully compatible as a back-end-of-line CMOS process. The aforementioned laser's performance is comparable to previous lasers having gain media fabricated at much higher temperatures (> 550 °C). This work marks a crucial step towards monolithic integration of amplifiers and lasers in silicon microphotonic systems.

Athermal synchronization of laser source with WDM filter in a silicon photonics platform.

In an optical interconnect circuit, microring resonators (MRRs) are commonly used in wavelength division multiplexing systems. To make the MRR and laser synchronized, the resonance wavelength of the MRR needs to be thermally controlled, and the power consumption becomes significant with a high-channel count. Here, we demonstrate an athermally synchronized rare-earth-doped laser and MRR. The laser comprises a Si3N4 based cavity covered with erbium-doped Al2O3 to provide gain. The low thermo-optic coefficient of Al2O3 and Si3N4 and the comparable thermal shift of the effective index in the laser and microring cross-sections enable lasing and resonance wavelength synchronization over a wide range of temperatures. The power difference between matched and unmatched channels remains greater than 15 dB from 20 to 50 °C due to a synchronized wavelength shift of 0.02 nm/°C. The athermal synchronization approach reported here is not limited to microring filters but can be applied to any Si3N4 filter with integrated lasers using rare earth ion doped Al2O3 as a gain medium to achieve system-level temperature control free operation.

Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D2O) in a D2O-H2O mixture at its maximum absorption band at around 4 µm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D2O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

Silicon-on-sapphire pillar waveguides for Mid-IR supercontinuum generation.

We propose pillar integrated silicon waveguides to exploit the entire transparent window of silicon. These geometries posses a broad and flat dispersion (from 2 to 6 µm) with four zero dispersion wavelengths. We calculate supercontinuum generation spanning over two octaves (2 to >8 µm) with long wavelengths interacting weakly with the lossy substrate. These structures have higher mode confinement in the silicon - away from the substrate, which makes them substrate independent and are promising for exploring new nonlinear phenomena and highly sensitive molecular sensing over the entire silicon's transparency range.

Positive and negative phototunability of chalcogenide (AMTIR-1) microdisk resonator.

We demonstrate externally photo-induced partially-reversible tuning of the resonance of a microdisk made of AMTIR-1 (Ge(33)As(12)Se(55)). We have achieved for the first time, to the best of our knowledge, both positive and negative shift in a microresonator with external tuning. A positive resonance shift of 1 nm and a negative resonance shift of 0.5 nm on a single microdisk has been measured. We have found that this phenomenon is due to initial photo-expansion of the microdisk followed by the photo-bleaching of the AMTIR-1. The observed shifts and the underlying phenomenon is controllable by varying the illumination power (i.e. the low power illumination suppresses the photobleaching process). We measure a loaded quality factor of 1.2x10(5) at 1550nm (limited by the measuring instrument). This holds promise for non-contact low power reversible-tunning of photonic circuit elements.