Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 µm.

Large GaSe crystals were grown and various antireflection microstructures (ARMs) were fabricated on their cleaved surfaces using optimized femtosecond laser ablation, which provided the antireflection effect in a wide wavelength range of 4-16 µm. The influence of ARMs created on the GaSe surface on the change of the laser-induced damage threshold (LIDT) of the crystal at a wavelength of 5 µm was evaluated. The 5-µm Fe:ZnMgSe laser with the pulse duration of 135 ns was used for the LIDT test in conditions close to single pulse exposure. The measured values of LIDT of 56 ± 6 MW/cm2 and 51 ± 9 MW/cm2 for two GaSe substrates, respectively, were comparable with the known data of single pulse LIDT of GaSe. The average LIDT intensities of 54 ± 6 MW/cm2 and 52 ± 7 MW/cm2 for the ARMs at two GaSe plates, respectively, were close to LIDT intensities for the corresponding GaSe substrates. The ARMs with lower structural quality had lower LIDT (50-52 MW/cm2) in comparison with the high-quality ARMs (58-60 MW/cm2). High LIDT for high-quality ARMs can be caused by increased selenium content in the ARMs. In any case, all the tested ARMs on the GaSe plates with different surface quality are workable for development of widely tunable mid-infrared nonlinear optical converters.

Highly transient stimulated Raman scattering in SrMoO4 under ultrafast laser pumping with a controllable chirp.

For the first time, to the best of our knowledge, we demonstrate highly transient, multiwavelength, single-pass Raman generation with combined frequency shifts on two Raman modes of an SrMoO4 crystal with high total Raman conversion efficiency of up to 48% in conditions of competition with self-phase modulation (SPM). A 58-mm-long SrMoO4 crystal was used as the active medium under pumping by the 1030-nm, 40-µJ laser pulses with controllable dispersive stretching in a range of 0.25-6 ps at negative and positive chirping. The pump pulse chirping was optimized for both high- and low-frequency Raman shifts on the primary (888 cm-1) and secondary (327 cm-1) Raman modes of the crystal. At the optimal conditions, four Stokes components of stimulated Raman scattering (SRS) radiation with high- and low-frequency Raman shifts at the wavelengths of 1066, 1134, 1177, and 1261 nm were efficiently generated.

Multiwavelength, picosecond, synchronously pumped, Pb(MoO4)0.2(WO4)0.8 Raman laser oscillating at 12 wavelengths in a range of 1128-1360 nm.

In this Letter, a mixed Pb(MoO4)0.2(WO4)0.8 as a new, to the best of our knowledge, active medium with optimized content for a synchronously pumped multiwavelength Raman laser with a combined frequency shift is presented. The unique structure of this crystal resulted in oscillations at 12 closely spaced output wavelengths in a spectral range from 1128 to 1360 nm. The strongest pulse shortening in comparison with nominally pure scheelite-like crystals has been achieved.

Highly efficient, high-energy, picosecond, synchronously pumped Raman laser at 1171 and 1217 nm based on PbMoO4 crystals with single and combined Raman shifts.

For the first time to our knowledge, the operation of a synchronously pumped ultrafast Raman laser that uses a PbMoO4 crystal as the active medium has been demonstrated. We achieved efficient Raman conversion in PbMoO4 from pumping 1063 nm into 1171 and 1217 nm, respectively, at single and combined frequency shifts on stretching and bending Raman modes. The output pulse energy (up to 160 nJ) and peak power (up to 11 kW) of the output picosecond radiation is the highest among all-solid-state synchronously pumped Raman lasers published to date. The strongest pulse shortening at 1217 nm down to 1.4 ps was obtained that is close to the bending mode dephasing time.

Highly efficient picosecond all-solid-state Raman laser at 1179 and 1227 nm on single and combined Raman lines in a BaWO4 crystal.

We present a highly efficient ring-cavity all-solid-state BaWO4 Raman laser generating at both the long-shift (ν1=925 cm-1) and short-shift (ν2=332 cm-1) Raman lines under external picosecond synchronous pumping at the wavelength of 1063 nm. Very high slope efficiencies and output pulse energies of 68.8% and 103 nJ at the ν1-shifted Stokes wavelength of 1179 nm, and 38.6% and 53 nJ at the (ν1+ν2)-shifted Stokes wavelength of 1227 nm have been achieved. Self-mode locking of the (ν1+ν2)-shifted Stokes field under intracavity pumping by the ν1-shifted Stokes field allowed to realize 12-fold shortening of the 1227 nm radiation pulse down to 3 ps close to the shorter dephasing time of the ν2 Raman line at the output pulse peak power 1.5 times higher than the pump peak power.