Topological insulator metamaterial with giant circular photogalvanic effect.

One of the most notable manifestations of electronic properties of topological insulators is the dependence of the photocurrent direction on the helicity of circularly polarized optical excitation. The helicity-dependent photocurrents, underpinned by spin-momentum locking of surface Dirac electrons, are weak and easily overshadowed by bulk contributions. Here, we show that the chiral response can be enhanced by nanostructuring. The tight confinement of electromagnetic fields in the resonant nanostructure enhances the photoexcitation of spin-polarized surface states of topological insulator Bi1.5Sb0.5Te1.8Se1.2, leading to an 11-fold increase of the circular photogalvanic effect and a previously unobserved photocurrent dichroism (ρcirc = 0.87) at room temperature. The control of spin transport in topological materials by structural design is a previously unrecognized ability of metamaterials that bridges the gap between nanophotonics and spin electronics, providing opportunities for developing polarization-sensitive photodetectors.

Infrared dielectric metamaterials from high refractive index chalcogenides.

High-index dielectric materials are in great demand for nanophotonic devices and applications, from ultrathin optical elements to metal-free sub-diffraction light confinement and waveguiding. Here we show that chalcogenide topological insulators are particularly apt candidates for dielectric nanophotonics architectures in the infrared spectral range, by reporting metamaterial resonances in chalcogenide crystals sustained well inside the mid-infrared, choosing Bi2Te3 as case study within this family of materials. Strong resonant modulation of the incident electromagnetic field is achieved thanks to the exceptionally high refractive index ranging between 7 and 8 throughout the 2-10 µm region. Analysis of the complex mode structure in the metamaterial allude to the excitation of circular surface currents which could open pathways for enhanced light-matter interaction and low-loss plasmonic configurations by coupling to the spin-polarized topological surface carriers, thereby providing new opportunities to combine dielectric, plasmonic and magnetic metamaterials in a single platform.

Solitonic waveguide reflection at an electric interface.

A refractive index interface is dynamically induced in a bulk photorefractive material by biasing two adjacent regions with different electric fields, thus building up an electric wall. Effects of this interface on reflection, refraction and breathing of bright photorefractive solitons and their associated waveguides are numerically and experimentally studied as a function of the induced purely electric field gradient. Reflection and refraction efficiency depends on the amplitude and sign of the applied voltages that affect both the self-confining beam and the signals propagating inside the waveguide. Experimental tests are performed in nominally undoped lithium niobate samples.

All-Optical Reinforcement Learning In Solitonic X-Junctions.

Ethology has shown that animal groups or colonies can perform complex calculation distributing simple decision-making processes to the group members. For example ant colonies can optimize the trajectories towards the food by performing both a reinforcement (or a cancellation) of the pheromone traces and a switch from one path to another with stronger pheromone. Such ant's processes can be implemented in a photonic hardware to reproduce stigmergic signal processing. We present innovative, completely integrated X-junctions realized using solitonic waveguides which can provide both ant's decision-making processes. The proposed X-junctions can switch from symmetric (50/50) to asymmetric behaviors (80/20) using optical feedbacks, vanishing unused output channels or reinforcing the used ones.

Relaxation lifetimes of plasmonically enhanced hybrid gold-carbon nanotubes systems.

Recently, we introduced a novel hybridization route for carbon nanotubes using gold nanoparticles, whose close proximity neatly enhances their radiative emission. Here we investigate the mechanisms behind the enhancement by monitoring the de-excitation dynamics of our π-hybrids through two-color pump-probe time-resolved spectroscopy. The de-excitation process reveals a fast component and a slow component. We find that the presence of gold prominently affects the fast processes, indicating a stronger influence of the gold nanoparticle on the intra-band non-radiative relaxation than on the inter-band recombination of the single-walled carbon nanotube. By evaluating the de-excitation times, we estimate the balance between near-field pumping and the faster metal-induced de-excitation contributions, proving the enhanced pumping to be the leading mechanism.

X-ray Scintillation in Lead Halide Perovskite Crystals.

Current technologies for X-ray detection rely on scintillation from expensive inorganic crystals grown at high-temperature, which so far has hindered the development of large-area scintillator arrays. Thanks to the presence of heavy atoms, solution-grown hybrid lead halide perovskite single crystals exhibit short X-ray absorption length and excellent detection efficiency. Here we compare X-ray scintillator characteristics of three-dimensional (3D) MAPbI3 and MAPbBr3 and two-dimensional (2D) (EDBE)PbCl4 hybrid perovskite crystals. X-ray excited thermoluminescence measurements indicate the absence of deep traps and a very small density of shallow trap states, which lessens after-glow effects. All perovskite single crystals exhibit high X-ray excited luminescence yields of >120,000 photons/MeV at low temperature. Although thermal quenching is significant at room temperature, the large exciton binding energy of 2D (EDBE)PbCl4 significantly reduces thermal effects compared to 3D perovskites, and moderate light yield of 9,000 photons/MeV can be achieved even at room temperature. This highlights the potential of 2D metal halide perovskites for large-area and low-cost scintillator devices for medical, security and scientific applications.

Enhancing photocurrent transient spectroscopy by electromagnetic modeling.

The shape and duration of photocurrent transients generated by a photoconductive switch depend on both the intrinsic response of the active material and the geometry of the transmission line structure. The present electromagnetic model decouples both shape forming contributions. In contrast to previously published work, it accounts for the particular operating mode of transient spectroscopy. The objective is to increase the time resolution by two approaches, by optimizing structural response and by deconvolving it from experimental data. The switch structure is represented by an effective transimpedance onto which the active material acts as current generator. As proof of concept, the response of a standard microstrip switch is modeled and deconvolved from experimental data acquired in GaAs, yielding a single exponential material response and hence supporting the validity of the approach. Beyond compensating for the response deterioration by the structure, switch architectures can be a priori optimized with respect to frequency response. As an example, it is shown that a microstrip gap that can be deposited on materials incompatible with standard lithography reduces pulse broadening by an order of magnitude if it is provided with transitions to coplanar access lines.

ZnO nanowire UV photodetectors with high internal gain.

ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.