Asymmetric Laser Field Interaction with MXene Coated on the Side Surface of Optical Fibers for Ultrafast Nonlinear Switches.

In recent years, there has been significant interest in researching ultrafast nonlinear optical phenomena involving light-matter interactions in two-dimensional (2D) materials, owing to their potential applications in optics and photonics. MXene, a recently developed 2D material, has garnered considerable attention due to its graphene-like properties and highly tunable electronic/optical characteristics. Herein, we demonstrate ultrafast all-optical switches based on four-wave-mixing (FWM) utilizing the nonlinear optical property of MXene Ti3C2Tx. In order to realize the device, we deposited multilayered Ti3C2Tx in the form of a supernatant solution onto the polished surface of a side-polished optical fiber, enabling the interaction of Ti3C2Tx with the asymmetric evanescent field of the incident input. We systematically characterized the nonlinear optical responses derived from the Ti3C2Tx layers. The fabricated device exhibits notable performance metrics, an enhancement of the extinction ratio, and a conversion efficiency of the newly generated signal, displaying 5.3 and 5.2 dB, respectively. Additionally, the device operates at high modulation frequencies, reaching up to 20 GHz, and demonstrates high-resolution detuning with channel distances of up to 15 nm. Our findings highlight the potential of MXene-based materials for ultrafast optical data management systems.

The Cell Wall Integrity MAP Kinase Signaling Pathway Is Required for Development, Pathogenicity, and Stress Adaption of the Pepper Anthracnose Fungus Colletotrichum scovillei.

The cell wall integrity (CWI) signaling pathway plays important roles in the dissemination and infection of several plant pathogenic fungi. However, its roles in the pepper fruit anthracnose fungus Colletotrichum scovillei remain uninvestigated. In this study, the major components of the CWI signaling pathway-CsMCK1 (MAPKKK), CsMKK1 (MAPKK), and CsMPS1 (MAPK)-were functionally characterized in C. scovillei via homology-dependent gene replacement. The ΔCsmck1, ΔCsmkk1, and ΔCsmps1 mutants showed impairments in fungal growth, conidiation, and tolerance to CWI and salt stresses. Moreover, ΔCsmck1, ΔCsmkk1, and ΔCsmps1 failed to develop anthracnose disease on pepper fruits due to defects in appressorium formation and invasive hyphae growth. These results suggest that CsMCK1, CsMKK1, and CsMPS1 play important roles in mycelial growth, conidiation, appressorium formation, plant infection, and stress adaption of C. scovillei. These findings will contribute to a better understanding of the roles of the CWI signaling pathway in the development of pepper fruit anthracnose disease.

Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer.

Fabrication of high quantum efficiency nanoscale device is challenging due to increased carrier loss at surface. Low dimensional materials such 0D quantum dots and 2D materials have been widely studied to mitigate the loss. Here, we demonstrate a strong photoluminescence enhancement from graphene/III-V quantum dot mixed-dimensional heterostructures. The distance between graphene and quantum dots in the 2D/0D hybrid structure determines the degree of radiative carrier recombination enhancement from 80% to 800% compared to the quantum dot only structure. Time-resolved photoluminescence decay also shows increased carrier lifetimes when the distance decreases from 50 to 10 nm. We propose that the optical enhancement is due to energy band bending and hole carrier transfer, which repair the imbalance of electron and hole carrier densities in quantum dots. This 2D graphene/0D quantum dot heterostructure shows promise for high performance nanoscale optoelectronic devices.

The Small GTPase CsRAC1 Is Important for Fungal Development and Pepper Anthracnose in Colletotrichum scovillei.

The pepper anthracnose fungus, Colletotrichum scovillei, causes severe losses of pepper fruit production in the tropical and temperate zones. RAC1 is a highly conserved small GTP-binding protein in the Rho GTPase family. This protein has been demonstrated to play a role in fungal development, and pathogenicity in several plant pathogenic fungi. However, the functional roles of RAC1 are not characterized in C. scovillei causing anthracnose on pepper fruits. Here, we generated a deletion mutant (ΔCsrac1) via homologous recombination to investigate the functional roles of CsRAC1. The ΔCsrac1 showed pleiotropic defects in fungal growth and developments, including vegetative growth, conidiogenesis, conidial germination and appressorium formation, compared to wild-type. Although ΔCsrac1 was able to develop appressoria, it failed to differentiate appressorium pegs. However, ΔCsrac1 still caused anthracnose disease with significantly reduced rate on wounded pepper fruits. Further analyses revealed that ΔCsrac1 was defective in tolerance to oxidative stress and suppression of host-defense genes. Taken together, our results suggest that CsRAC1 plays essential roles in fungal development and pathogenicity in C. scovillei-pepper fruit pathosystem.

Conformal Graphene Directly Synthesized on a Femtosecond Laser-Scribed In-Fiber Microstructure for High-Energy Ultrafast Optical Pulses.

Despite extensive efforts to explore femtosecond lasers functionalized by nonlinear graphene (Gf) that relies on the traditional transfer process, maximizing the efficiency, customizing the nonlinear interaction, and minimizing the optical loss remain critical challenges, especially in high-energy pulse generation. We demonstrate an ultrafast nonlinear all-fiber device based on conformal Gf directly synthesized in three dimensions on the surface of an in-fiber microstructure. A femtosecond laser-induced selective etching process is used to fabricate a customized microstructure that ensures the minimum but efficient laser-Gf interaction as well as possesses excellent surface conditions to suppress absorption and scattering loss. Conformal Gf is prepared by a spatial diffusion-based atomic carbon spraying process that enables nanocrystals to be synthesized homogeneously even onto the complex surface of the microstructure. The demonstration of high-energy pulses from the Gf saturable absorber highlights its simple, process-efficient, adjustable, and robust performance. The resultant hyperbolic secant pulses display individual pulse energy and peak power of up to 13.2 nJ and 20.17 kW, respectively.

Graphene Capacitor-Based Electrical Switching of Mode-Locking in All-Fiberized Femtosecond Lasers.

Effective high-capacity data management necessitates the use of ultrafast fiber lasers with mode-locking-based femtosecond pulse generation. We suggest a simple but highly efficient structure of a graphene saturable absorber in the form of a graphene/poly(methyl methacrylate) (PMMA)/graphene capacitor and demonstrate the generation of ultrashort pulses by passive mode-locking in a fiber ring laser cavity, with simultaneous electrical switching (on/off) of the mode-locking operation. The voltage applied to the capacitor shifts the Fermi level of the graphene layers, thereby controlling their nonlinear light absorption, which is directly correlated with mode-locking. The flexible PMMA layer used for graphene transfer also acts as a dielectric layer to realize a very simple but effective capacitor structure. By employing the graphene capacitor on the polished surface of a D-shaped fiber, we demonstrate the switching of the mode-locking operation reversibly from the femtosecond pulse regime to a continuous wave regime of the ring laser with an extinction ratio of 70.4 dB.

Graphene Self-Phase-Lockers Formed around a Cu Wire Hub for Ring Resonators Incorporated into 57.8 Gigahertz Fiber Pulsed Lasers.

We demonstrate graphene-functionalized self-phase-locking of laser pulses for a dramatically elevated repetition rate by employing an intrinsic resonating structure in a fiber ring laser cavity, the modes thereby satisfying the phase-matching condition passively, through both the resonator and the laser cavity. Graphene is directly synthesized around a 1-mm-diameter Cu wire catalyst, avoiding the deleterious transfer process. The wire provides a form factor to the fiber ring resonator as a versatile winding hub, guaranteeing damage-minimized and recyclable contact of the synthesized graphene with a diameter-controlled optical microfiber. In-depth analysis of the graphene confirms the optical nonlinearity critically required for pulse formation. The laser-graphene interaction, the intermode phase-locking function of graphene, and the pulse formation with the resonator are systematically elucidated to explain the experimentally generated laser pulses at a repetition rate of 57.8 gigahertz (GHz). Additionally, tunability of the repetition rate up to 1.5 GHz by the photothermal effect of graphene is demonstrated.

Transparent Conductive Electrodes of ß-Ga2O3/Ag/ß-Ga2O3 Multilayer for Ultraviolet Emitters.

We investigated the optical and electrical properties of a ß-Ga2O3/Ag/ß-Ga2O3 multilayer transparent conductive electrode deposited on an α-Al2O3 (0001) substrate. For the deposition of a continuous Ag layer, we preliminarily performed anultraviolet-ozone pretreatment of the Ga2O3 bottom layer. To obtain a stable ß-phase of Ga2O3, the ß-Ga2O3/Ag/ß-Ga2O3 multilayer was annealed at 700 °C under N2 atmosphere. The transmittance and sheet resistance of the ß-Ga2O3/Ag/ß-Ga2O3 multilayer were critically affected by the surface morphology and thickness of the Ag interlayer. The multilayer with optimized thicknesses (ß-Ga2O3 top layer: 30 nm; Ag interlayer: 12 nm; ß-Ga2O3 bottom layer: 60 nm) exhibited a resistance of 8.48 Ωsq-1, an average optical transmittance of 87.16% in the ultraviolet wavelength range from 300 to 350 nm, and a figure of merit of 29.81 × 10-3 Ω-1.

Graphene-Incorporated Soft Capacitors for Mechanically Adjustable Electro-Optic Modulators.

In addition to ultrahigh capacity and speed in data management, future communication networks require enhanced performance via system reconfigurability under limited resources. Extremely high-speed operation renders optical data managing devices as excellent candidates to hybridize with current electronic devices; however, they still need tunability for system reconfiguration in an integrated scheme. We demonstrate an efficient electro-optic (EO) modulator that is mechanically tunable on a multiple optical waveguide system that functioned with a soft capacitor structure incorporating graphene and poly(methyl methacrylate) (PMMA). The flexible capacitor that generates optical signals by temporal light absorption depending on electrical signals can be mechanically detached and reattached from and onto a rigid surface of the waveguide. It provides either the on or off state of the modulating operation, and enables switching of the working waveguides, following the reconfigured data routes. Quality-controlled graphene mainly provides the EO operation, and PMMA plays an important role as both the flexible dielectric layer in the capacitor and the passivation layer for graphene protection. The modulation effects of the manually prepared graphene-PMMA capacitor mechanically adjusted onto a side-polished optical fiber (D-shaped fiber) are investigated in terms of the extinction ratio (ER) of the transmitting light and the operational bandwidth. We successfully display an ER of the modulator up to 19.8 dB with a voltage control ranging from -50 to 50 V. Its stable operation is verified with a modulation speed up to 2.5 MHz.

Three-Dimensionally Printed Interconnects for Smart Contact Lenses.

One of the ultimate wearable heath-monitoring gears, smart contact lens, requires miniaturized devices compounded and interconnected with each other on the lens for a successful system functioning. Because of the different device thickness, the interconnect patterns need to be three-dimensional (3D) conforming the steps given by the diversified on-lens devices. Also, the patterns should be low-temperature processed and flexible considering the mechanical and thermal property of the lens material. We demonstrate the 3D interconnects electrosprayed on a contact lens platform with Ag-Ag nanowire (NWs) composite ink conforming the steps. Quantitative and informative analysis on the interconnects is presented. Thick polyimide film (12.5 µm) in C-shape is employed as a primary substrate to form the 3D patterns that is to be transferred onto the contact lens. The AgNWs act as frames to support the Ag ion inks printed across the steps. The resultant interconnects realized with the Ag/AgNW composite ink with 0.3 wt % AgNW have the sheet resistance ( Rs) of 0.396 Ω/□ spanning the height difference of 300 µm. AgNWs also provide durability to the patterns against crack formation and propagation under significant device deformation. Unlike pure Ag pattern which shows the Rs changes of 86.1% in the bending condition, the optimally formulated composite pattern shows the suppressed Rs change of only 15.2% with a bending radius of 3 mm.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers.

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Nonlinear Black Phosphorus for Ultrafast Optical Switching.

The outstanding electronic and optical properties of black phosphorus (BP) in a two-dimensional (2D) but unique single-layer puckered structure have opened intense research interest ranging from fundamental physics to nanoscale applications covering the electronic and optical domains. The direct and controllable electronic bandgap facilitating wide range of tunable optical response coupled with high anisotropic in-plane properties made BP a promising nonlinear optical material for broadband optical applications. Here, we investigate ultrafast optical switching relying on the optical nonlinearity of BP. Wavelength conversion for modulated signals whose frequency reaches up to 20 GHz is realized by four-wave-mixing (FWM) with BP-deposited D-shaped fiber. In the successful demonstration of the FWM based wavelength conversion, performance parameter has been increased up to ~33% after employing BP in the device. It verifies that BP is able to perform efficient optical switching in the evanescent field interaction regime at very high speed. Our results might suggest that BP-based ultra-fast photonics devices could be potentially developed for broadband applications.

Air-stable few-layer black phosphorus phototransistor for near-infrared detection.

We have demonstrated a few-layer black phosphorus (BP) phototransistor of stable operation in ambient air environment and at near-infrared light (λ = 1550 nm). The air-stable electronic and optoelectronic properties of the few-layer BP phototransistor have been achieved by a proper Al2O3 passivation. The optical identification method and qualitative and quantitative electrical characterizations of the few-layer BP phototransistor in dark state confirmed that the device performance was robust in ambient air, to further chemical treatments, and storage of more than six months. In addition, the low-frequency noise characterizations had revealed that the noise spectral density related to the sensitivity of phototransistor was reduced. Owing to the suppression of interaction between few-layer BP and adsorbates arising from the Al2O3 passivation, a fast rise time of the few-layer BP phototransistor, less than 100 µs, had been observed, demonstrating the intrinsic photoresponse properties of few-layer BP. The low dark current of ∼4 nA at the operation bias and the reasonable responsivity of ∼6 mA W-1 were obtained under the condition lacking adsorbates interactions. Internally, the dark current and responsivity level was tunable by changing the operation bias. Our results are close to the intrinsic properties of the few-layer BP phototransistor, implying that it can be a building block of functioned few-layer BP photodetectors.

Thermal damage suppression of a black phosphorus saturable absorber for high-power operation of pulsed fiber lasers.

Recent studies of black phosphorus (BP) have shown its future potential in the field of photonics. We determined the optical damage threshold of BP at 21.8 dBm in a fiber ring laser cavity, and demonstrated the high-power operation capacity of an evanescent field interaction-based BP saturable absorber. The long-term stability of a passively mode-locked fiber laser with a saturable absorber operating at the optical power of 23.3 dBm was verified for 168 h without any significant performance degradation. The center wavelength, spectral width, and pulse width of the laser output are 1558.8 nm, 14.2 nm, and 805 fs, respectively.

Direct Electron Transfer of Enzymes in a Biologically Assembled Conductive Nanomesh Enzyme Platform.

Nondestructive assembly of a nanostructured enzyme platform is developed in combination of the specific biomolecular attraction and electrostatic coupling for highly efficient direct electron transfer (DET) of enzymes with unprecedented applicability and versatility. The biologically assembled conductive nanomesh enzyme platform enables DET-based flexible integrated biosensors and DET of eight different enzyme with various catalytic activities.

Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.

Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon-fluorine (C-F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm(2) V(-1) s(-1) with a 10(3) on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors.

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step.

Growth, Quantitative Growth Analysis, and Applications of Graphene on γ-Al2O3 catalysts.

The possibilities offered by catalytic γ-Al2O3 substrates are explored, and the mechanism governing graphene formation thereon is elucidated using both numerical simulations and experiments. The growth scheme offers metal-free synthesis at low temperature, grain-size customization, large-area uniformity of electrical properties, single-step preparation of graphene/dielectric structures, and readily detachable graphene. We quantify based on thermodynamic principles the activation energies associated with graphene nucleation/growth on γ-Al2O3, verifying the low physical and chemical barriers. Importantly, we derive a universal equation governing the adsorption-based synthesis of graphene over a wide range of temperatures in both catalytic and spontaneous growth regimes. Experimental results support the equation, highlighting the catalytic function of γ-Al2O3 at low temperatures. The synthesized graphene is manually incorporated as a 'graphene sticker' into an ultrafast mode-locked laser.

Hand-manageable graphene sticker for ultrafast mode-locked fiber lasers.

We have developed a graphene sticker prepared by simply detaching graphene directly grown on a self-catalytic γ-Al2O3 substrate with a spin-coated polymer film. Our scheme is highlighted by the metal-free and bare-hand manageable process. The sticker is attached onto the flat surface of a D-shaped fiber to demonstrate an efficient fiber mode-locked laser. The 1-ps output pluses have the center wavelength, spectral width, and repetition rate of 1558.2 nm, 5.42 nm, and 4.77 MHz, respectively.

Few-layer black phosphorus field-effect transistors with reduced current fluctuation.

We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-effect transistors resulting from Al2O3 passivation. In order to verify the effect of Al2O3 passivation on device characteristics, measurements and analyses were conducted on thermally annealed devices before and after the passivation. More specifically, static and low-frequency noise analyses were used in monitoring the charge transport characteristics in the devices. The carrier number fluctuation (CNF) model, which is related to the charge trapping/detrapping process near the interface between the channel and gate dielectric, was employed to describe the current fluctuation phenomena. Noise reduction due to the Al2O3 passivation was expressed in terms of the reduced interface trap density values D(it) and N(it), extracted from the subthreshold slope (SS) and the CNF model, respectively. The deviations between the interface trap density values extracted using the SS value and CNF model are elucidated in terms of the role of the Schottky barrier between the few-layer BP and metal contact. Furthermore, the preservation of the Al2O3-passivated few-layer BP flakes in ambient air for two months was confirmed by identical Raman spectra.