Evaporation Process in Porous Silicon: Cavitation vs Pore Blocking.

We measured sorption isotherms for helium and nitrogen in wide temperature ranges and for a series of porous silicon samples, both native samples and samples with reduced pore mouth, so that the pores have an ink-bottle shape. Combining volumetric measurements and sensitive optical techniques, we show that, at a high temperature, homogeneous cavitation is the relevant evaporation mechanism for all samples. At a low temperature, the evaporation is controlled by meniscus recession, the detailed mechanism being dependent on the pore length and mouth reduction. Native samples and samples with ink-bottle pores shorter than 1 µm behave as an array of independent pores. In contrast, samples with long ink-bottle pores exhibit long-range correlations between pores. In this latter case, evaporation takes place by a collective percolation process and not by heterogeneous cavitation as previously proposed. The variety of evaporation mechanisms points to porous silicon being an anisotropic three-dimensional pore network rather than an array of straight independent pores.

Condensation of helium in aerogel and athermal dynamics of the random-field Ising model.

High resolution measurements reveal that condensation isotherms of (4)He in high porosity silica aerogel become discontinuous below a critical temperature. We show that this behavior does not correspond to an equilibrium phase transition modified by the disorder induced by the aerogel structure, but to the disorder-driven critical point predicted for the athermal out-of-equilibrium dynamics of the random-field Ising model. Our results evidence the key role of nonequilibrium effects in the phase transitions of disordered systems.

Multifunctional devices and logic gates with undoped silicon nanowires.

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode, or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.

Joule-assisted silicidation for short-channel silicon nanowire devices.

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-silicide devices with controlled silicon channel length down to 8 nm.