Measuring Ligand-Dependent Transport in Nanopatterned PbS Colloidal Quantum Dot Arrays Using Charge Sensing.

Colloidal quantum dot arrays with long organic ligands have better packing order than those with short ligands but are highly resistive, making low-bias conductance measurements impossible with conventional two-probe techniques. We use an integrated charge sensor to study transport in weakly coupled arrays in the low-bias regime, and we nanopattern the arrays to minimize packing disorder. We present the temperature and field dependence of the resistance for nanopatterned oleic-acid and n-butylamine-capped PbS arrays, measuring resistances as high as 10(18) Ω. We find that the conduction mechanism changes from nearest neighbor hopping in oleic-acid-capped PbS dots to Mott's variable range hopping in n-butylamine capped PbS dots. Our results can be understood in terms of a change in the interdot coupling strength or a change in density of trap states and highlight the importance of the capping ligand on charge transport through colloidal quantum dot arrays.

Manipulating superconducting fluctuations by the Little-Parks-de Gennes effect in ultrasmall Al loops.

The destruction of superconducting phase coherence by quantum fluctuations and the control of these fluctuations are a problem of long-standing interest, with recent impetus provided by the relevance of these issues to the pursuit of high temperature superconductivity. Building on the work of Little and Parks, de Gennes predicted more than three decades ago that superconductivity could be destroyed near half-integer-flux quanta in ultrasmall loops, resulting in a destructive regime, and restored by adding a superconducting side branch, which does not affect the flux quantization condition. We report the experimental observation of this Little-Parks-de Gennes effect in Al loops prepared by advanced e-beam lithography. We show that the effect can be used to restore the lost phase coherence by employing side branches.

Raman topography and strain uniformity of large-area epitaxial graphene.

We report results of Raman spectroscopy studies of large-area epitaxial graphene grown on SiC. Our work reveals unexpectedly large variation in Raman shift resulting from graphene strain inhomogeneity, which is shown to be correlated with physical topography by coupling Raman spectroscopy with atomic force microscopy. We show that graphene strain can vary over a distance shorter than 300 nm and may be uniform only over roughly 1 microm. We show that nearly strain-free graphene is possible even in epitaxial graphene.