Contact Conductance Governs Metallicity in Conducting Metal Oxide Nanocrystal Films.

Although colloidal nanoparticles hold promise for fabricating electronic components, the properties of nanoparticle-derived materials can be unpredictable. Materials made from metallic nanocrystals exhibit a variety of transport behavior ranging from insulators, with internanocrystal contacts acting as electron transport bottlenecks, to conventional metals, where phonon scattering limits electron mobility. The insulator-metal transition (IMT) in nanocrystal films is thought to be determined by contact conductance. Meanwhile, criteria are lacking to predict the characteristic transport behavior of metallic nanocrystal films beyond this threshold. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied electron concentration, size, and contact area, we assess the IMT as it depends on contact conductance and show how contact conductance is also key to predicting the temperature-dependence of conductivity in metallic films. The results establish a phase diagram for electron transport behavior that can guide the creation of metallic conducting materials from nanocrystal building blocks.

Dual-Mode Infrared Absorption by Segregating Dopants within Plasmonic Semiconductor Nanocrystals.

When aliovalent dopants are sufficiently segregated to the core or near the surface of semiconductor nanocrystals, charge carriers donated by the dopants are also segregated to the core or near the surface, respectively. In Sn-doped indium oxide nanocrystals, we find that this contrast in free charge carrier concentration creates a core and shell with differing dielectric properties and results in two distinctly observable plasmonic extinction peaks. The trends in this dual-mode optical response with shell growth differ from core/shell nanoparticles composed of traditional plasmonic metals such as Au and Ag. We developed a model employing a core/shell effective medium approximation that can fit the dual-mode spectra and explain the trends in the extinction response. Lastly, we show that dopant segregation can improve sensitivity of plasmon spectra to changes in refractive index of the surrounding environment.

Enhanced Coloration Efficiency of Electrochromic Tungsten Oxide Nanorods by Site Selective Occupation of Sodium Ions.

Coloration efficiency is an important figure of merit in electrochromic windows. Though it is thought to be an intrinsic material property, we tune optical modulation by effective utilization of ion intercalation sites. Specifically, we enhance the coloration efficiency of m-WO2.72 nanocrystal films by selectively intercalating sodium ions into optically active hexagonal sites. To accurately measure coloration efficiencies, significant degradation during cycling is mitigated by introducing atomic-layer-deposited Al2O3 layers. Galvanostatic spectroscopic measurement shows that the site-selective intercalation of sodium ions in hexagonal tunnels enhances the coloration efficiency compared to a nonselective lithium ion-based electrolyte. Electrochemical rate analysis shows insertion of sodium ions to be capacitive-like, another indication of occupying hexagonal sites. Our results emphasize the importance of different site occupation on spectroelectrochemical properties, which can be used for designing materials and selecting electrolytes for enhanced electrochromic performance. In this context, we suggest sodium ion-based electrolytes hold unrealized potential for tungsten oxide electrochromic applications.

Quantitative Analysis of Extinction Coefficients of Tin-Doped Indium Oxide Nanocrystal Ensembles.

The optical extinction coefficients of localized surface plasmon resonance (LSPR) in doped semiconductor nanocrystals (NCs) have intensities determined by the density and damping mechanisms of free charge carriers. We investigate the dependence of the extinction coefficient of tin-doped indium oxide (ITO) NCs on size and dopant concentration and find extinction coefficients as high as 56.6 µm-1 in the near-infrared for 20 nm diameter ITO NCs with 7.5 atomic% Sn. We find ITO NCs to be more efficient infrared light absorbers than metal nanoparticles or molecular dyes. We also find the intensive, volume-normalized extinction coefficient increases significantly with NC doping and NC diameter, but only up to the point of saturation in both cases. We qualitatively analyze trends in LSPR peak position and width to explain the effect of doping and size on extinction.

Author Correction: Impacts of surface depletion on the plasmonic properties of doped semiconductor nanocrystals.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Surface Depletion Layers in Plasmonic Metal Oxide Nanocrystals.

Strong infrared (IR) light-matter interaction and spectral tunability combine to make plasmonic metal oxide nanocrystals (NCs) a compelling choice for IR applications. In particular, visible transparency paired with strong, dynamically tunable IR absorption has motivated their implementation in electrochromic smart windows, but these NCs hold promise for a far broader range of plasmonically driven processes such as surface-enhanced infrared sensing, photothermal therapy, and enhanced photocatalysis. These unique properties result from localized surface plasmon resonance (LSPR) sustained by a relatively low free charge carrier concentration, which in turn requires consideration of distinct materials physics relative to traditional plasmonic materials (i.e., metals). Particularly important is the formation of insulating shells devoid of charge carriers (depletion layers) near the NC surface. Surface states as well as applied surface potentials can give rise to a potential difference between the NC surface and its core that depletes free charge carriers from the surface, forming an insulating shell that reduces the conductivity in NC films, lowers the dielectric sensitivity of the LSPR, and diminishes the incident electric field enhancement. In this Account, we report recent investigations of depletion layers in plasmonic metal oxide NCs that have advanced understanding of the semiconductor physics underlying the optoelectronic properties of these NCs and the electrochemical modulation of their LSPR, establishing a conceptual framework with which to broaden their applicability and optimize their performance. As a result of surface depletion, larger, highly doped NCs have improved dielectric sensitivity compared with their smaller, lightly doped counterparts. Concentrating dopants near the NC surface compresses the depletion layer, resulting in improved conductivity of NC films. Moreover, atomic layer deposition of alumina to infill NC films enhances the film conductivity by more than 2 orders of magnitude, ascribed to the elimination of depletion effects by reactive removal of surface water species. At the conclusion, we reflect on how our newfound understanding of surface depletion in plasmonic metal oxide NCs is quickly leading to rational material design. This insight is already resulting in significant performance improvements, and the same principles can be applied to new, exciting opportunities in hot carrier extraction and resonant IR energy transduction.

Impacts of surface depletion on the plasmonic properties of doped semiconductor nanocrystals.

Degenerately doped semiconductor nanocrystals (NCs) exhibit a localized surface plasmon resonance (LSPR) in the infrared range of the electromagnetic spectrum. Unlike metals, semiconductor NCs offer tunable LSPR characteristics enabled by doping, or via electrochemical or photochemical charging. Tuning plasmonic properties through carrier density modulation suggests potential applications in smart optoelectronics, catalysis and sensing. Here, we elucidate fundamental aspects of LSPR modulation through dynamic carrier density tuning in Sn-doped In2O3 (Sn:In2O3) NCs. Monodisperse Sn:In2O3 NCs with various doping levels and sizes were synthesized and assembled in uniform films. NC films were then charged in an in situ electrochemical cell and the LSPR modulation spectra were monitored. Based on spectral shifts and intensity modulation of the LSPR, combined with optical modelling, it was found that often-neglected semiconductor properties, specifically band structure modification due to doping and surface states, strongly affect LSPR modulation. Fermi level pinning by surface defect states creates a surface depletion layer that alters the LSPR properties; it determines the extent of LSPR frequency modulation, diminishes the expected near-field enhancement, and strongly reduces sensitivity of the LSPR to the surroundings.

Tuning Nanocrystal Surface Depletion by Controlling Dopant Distribution as a Route Toward Enhanced Film Conductivity.

Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a means to manipulate the NC depletion width. We find in films of ITO NCs of equal overall dopant concentration that those with dopant-enriched surfaces show decreased depletion width and increased conductivity. Variable temperature conductivity data show electron localization length increases and associated depletion width decreases monotonically with increased density of dopants near the NC surface. We calculate band profiles for NCs of differing radial dopant distributions and in agreement with variable temperature conductivity fits find NCs with dopant-enriched surfaces have narrower depletion widths and longer localization lengths than those with dopant-enriched cores. Following amelioration of NC surface depletion by atomic layer deposition of alumina, all films of equal overall dopant concentration have similar conductivity. Variable temperature conductivity measurements on alumina-capped films indicate all films behave as granular metals. Herein, we conclude that dopant-enriched surfaces decrease the near-surface depletion region, which directly increases the electron localization length and conductivity of NC films.

High Mobility in Nanocrystal-Based Transparent Conducting Oxide Thin Films.

Charge carrier mobility in transparent conducting oxide (TCO) films is mainly limited by impurity scattering, grain boundary scattering, and a hopping transport mechanism. We enhanced the mobility in nanocrystal (NC)-based TCO films, exceeding even typical values found in sputtered thin films, by addressing each of these scattering factors. Impurity scattering is diminished by incorporating cerium as a dopant in indium oxide NCs instead of the more typical dopant, tin. Grain boundary scattering is reduced by using large NCs with a size of 21 nm, which nonetheless were sufficiently small to avoid haze due to light scattering. In-filling of the precursor solution followed by annealing results in a NC-based composite film which conducts electrons through metal-like transport at room temperature, readily distinguished by the positive temperature coefficient of resistance. Cerium-doped indium oxide (Ce:In2O3) NC-based composite films achieve a high mobility of 56.0 cm2/V·s, and a low resistivity of 1.25 × 10-3 Ω·cm. The films are transparent to a broad range of visible and near-infrared light from 400 nm to at least 2500 nm wavelength. On the basis of the high conductivity and high transparency of the Ce:In2O3 NC-based composite films, the films are successfully applied as transparent electrodes within an electrochromic device.