Toward stabilization of formamidinium lead iodide perovskites by defect control and composition engineering.

Phase instability poses a serious challenge to the commercialization of formamidinium lead iodide (FAPbI3)-based solar cells and optoelectronic devices. Here, we combine density functional theory and machine learning molecular dynamics simulations, to investigate the mechanism driving the undesired α-δ phase transition of FAPbI3. Prevalent iodine vacancies and interstitials can significantly expedite the structural transition kinetics by inducing robust covalency during transition states. Extrinsically, the detrimental roles of atmospheric moisture and oxygen in degrading the FAPbI3 perovskite phase are also rationalized. Significantly, we discover the compositional design principles by categorizing that A-site engineering primarily governs thermodynamics, whereas B-site doping can effectively manipulate the kinetics of the phase transition in FAPbI3, highlighting lanthanide ions as promising B-site substitutes. A-B mixed doping emerges as an efficient strategy to synergistically stabilize α-FAPbI3, as experimentally demonstrated by substantially higher initial optoelectronic characteristics and significantly enhanced phase stability in Cs-Eu doped FAPbI3 as compared to its Cs-doped counterpart. This study provides scientific guidance for the design and optimization of long-term stable FAPbI3-based solar cells and other optoelectronic devices through defect control and synergetic composition engineering.

Recalibrating the Experimentally Derived Structure of the Metastable Surface Oxide on Copper via Machine Learning-Accelerated In Silico Global Optimization.

The oxidation of copper and its surface oxides are gaining increasing attention due to the enhanced CO2 reduction reaction (CO2RR) activity exhibited by partially oxidized copper among the copper-based catalysts. The "8" surface oxide on Cu(111) is seen as a promising structure for further study due to its resemblance to the highly active Cu2O(110) surface in the C-C coupling of the CO2RR, setting it apart from other O/Cu(111) surface oxides resembling Cu2O(111). However, recent X-ray photoelectron spectroscopy analysis challenges the currently accepted atomic structure of the "8" surface oxide, prompting a need for reevaluation. This study highlights the limitations of conventional methods when addressing such challenges, leading us to adopt global optimization search techniques. After a rigorous process to ensure robustness, the unbiased global minimum of the "8" surface oxide is identified. Interestingly, this configuration differs significantly from other surface oxides and also from previous "8" models while retaining similarities to the Cu2O(110) surface.

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives.

Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.

Crystal orientation-dependent tensile mechanical behavior and deformation mechanisms of zinc-blende ZnSe nanowires.

Crystal deformation mechanisms and mechanical behaviors in semiconductor nanowires (NWs), in particular ZnSe NWs, exhibit a strong orientation dependence. However, very little is known about tensile deformation mechanisms for different crystal orientations. Here, the dependence of crystal orientations on mechanical properties and deformation mechanisms of zinc-blende ZnSe NWs are explored using molecular dynamics simulations. We find that the fracture strength of [111]-oriented ZnSe NWs shows a higher value than that of [110] and [100]-oriented ZnSe NWs. Square shape ZnSe NWs show greater value in terms of fracture strength and elastic modulus compared to a hexagonal shape at all considered diameters. With increasing temperature, the fracture stress and elastic modulus exhibit a sharp decrease. It is observed that the {111} planes are the deformation planes at lower temperatures for the [100] orientation; conversely, when the temperature is increased, the {100} plane is activated and contributes as the second principal cleavage plane. Most importantly, the [110]-directed ZnSe NWs show the highest strain rate sensitivity compared to the other orientations due to the formation of many different cleavage planes with increasing strain rates. The calculated radial distribution function and potential energy per atom further validates the obtained results. This study is very important for the future development of efficient and reliable ZnSe NWs-based nanodevices and nanomechanical systems.

Ferro-piezoelectricity in emerging Janus monolayer BMX2 (M = Ga, In and X = S, Se): ab initio investigations.

Nanoscale materials with inter-correlation characteristics are fundamental for developing high performance devices and applications. Hence theoretical research into unprecedented two-dimensional (2D) materials is crucial for improving understanding, especially when piezoelectricity is merged with other unique properties such as ferroelectricity. In this work, an unexplored 2D Janus family BMX2 (M = Ga, In and X = S, Se) corresponding to group-III ternary chalcogenides has been explored. The structural and mechanical stability, and optical and ferro-piezoelectric properties of BMX2 monolayers were investigated using first-principles calculations. We found that the lack of imaginary phonon frequencies in the phonon dispersion curves establishes the dynamic stability of the compounds. The monolayers BGaS2 and BGaSe2 are indirect semiconductors with bandgaps of 2.13 eV and 1.63 eV, respectively, while BInS2 is a direct semiconductor with a bandgap of 1.21 eV. BInSe2 is a novel zero-gap ferroelectric material with quadratic energy dispersion. All monolayers exhibit a high spontaneous polarization. The optical characteristics of the BInSe2 monolayer show high light absorption ranging from the infrared to the ultraviolet. The BMX2 structures exhibit in-plane and out-of-plane piezoelectric coefficients of up to 4.35 pm V-1 and 0.32 pm V-1. According to our findings, 2D Janus monolayer materials are a promising choice for piezoelectric devices.

Origin of Enhanced Nonradiative Carrier Recombination Induced by Oxygen in Hybrid Sn Perovskite.

Oxygen ingression has been shown to substantially decrease the carrier lifetime of Sn-based perovskites, behind which the mechanism remains yet unknown. Our first-principles calculations reveal that in prototypical MASnI3 (MA = CH3NH3), oxygen by itself is not a recombination center. Instead, it tends to form substitutional OI through combining with native I vacancies (VI) and remarkably increases the original recombination rate of VI by 2-3 orders of magnitude. This rationalizes the experimentally observed sharp decline of carrier lifetime in perovskites exposed to air. The significantly enhanced carrier recombination is due to a smaller electron capture barrier of OI, resulting from lattice strengthening and the suppressed structural relaxation upon electron capture. These insights offer a route to further improve device performance via anion engineering in broad Sn-based perovskite optoelectronics operating in ambient air. Moreover, our results highlight the important role of lattice relaxation for nonradiative carrier capture in materials in general.

Strain engineering of hyperbolic plasmons in monolayer carbon phosphide: a first-principles study.

Natural and tunable in-plane hyperbolic plasmons have so far been elusive, and hence few two-dimensional hyperbolic materials have been theoretically and experimentally discovered. Here, comprehensive first-principles calculations were conducted to study the electronic and plasmonic properties of biaxially strained monolayer carbon phosphide (ß-CP). We found that (i) a compressed ß-CP hosts strong anisotropic Dirac-shaped fermions with robust modulated Fermi velocity, (ii) for biaxial strain of -3% an unprecedented ultra-wide hyperbolic window is extended continuously from terahertz (9 THz) to mid-visible (blue light, 693 THz), (iii) the tunable optical Van Hove singularity as the origin of hyperbolic plasmons in deformed ß-CP is disclosed, (iv) an elliptic to hyperbolic transition in the σ-near-zero regime is demonstrated in terahertz frequencies (9 THz), (v) the propagation angle of the concave wavefront can be actively tuned using biaxial strains, and (vi) hyperbolic dispersion reorientation from one principal axis to another orthogonal one under compressive strains larger than 8% is observed. This study sheds new light on the unique properties of hyperbolic two-dimensional (2D) materials having exotic optoelectronic characteristics which are promising candidates for anisotropic light control with ultimate dexterity in the flat optics.

Two-dimensional SiC/AlN based type-II van der Waals heterobilayer as a promising photocatalyst for overall water disassociation.

Two-dimensional (2D) van der Waals (vdW) heterostructures made by vertical assembling of two different layers have drawn immense attention in the photocatalytic water disassociation process. Herein, we suggest a novel 2D/2D vdW heterobilayer consisting of silicon carbide (SiC) and aluminum nitride (AlN) as an exciting photocatalyst for solar-to-hydrogen conversion reactions using first-principles calculations. Notably, the heterostructure presents an inherent type-II band orientation wherein the photogenic holes and electrons are spatially separated in the SiC layer and the AlN layer, respectively. Our results indicate that the SiC/AlN heterostructure occupies a suitable band-gap of 2.97 eV which straddles the kinetic overpotentials of the hydrogen production reaction and oxygen production reaction. Importantly, the built-in electric field at the interface created by substantial charge transfer prohibits carrier recombination and further improves the photocatalytic performance. The heterostructure has an ample absorption profile ranging from the ultraviolet to the near-infrared regime, while the intensity of the absorption reaches up to 2.16 × 105 cm-1. In addition, external strain modulates the optical absorption of the heterostructure effectively. This work provides an intriguing insight into the important features of the SiC/AlN heterostructure and renders useful information on the experimental design of a novel vdW heterostructure for solar energy-driven water disassociation with superior efficiency.

Atomistic reaction mechanism of CVD grown MoS2 through MoO3 and H2S precursors.

Chemical vapor deposition (CVD) through sulfidation of MoO3 is one of the most important synthesis techniques to obtain large-scale and high-quality two-dimensional (2D) MoS2. Recently, H2S precursor is being used in the CVD technique to synthesize 2D MoS2. Although several studies have been carried out to examine the mechanism of MoS2 growth in the presence of sulfur and MoO3 precursors, the growth of MoS2 in the presence of H2S precursor has largely remained unknown. In this study, we present a Reactive molecular dynamics (RMD) simulation to investigate the reaction mechanism of MoS2 from MoO3 and H2S precursors. The intermediate molecules formation, the reason behind those formations, and the surface compositions of MoOxSyHz during the initial steps of CVD have all been quantified. Surprisingly, a sudden separation of sulfur atoms from the surface was observed in the H2S precursor system due to the substantial oxygen evolution after 1660 K. The sulfur detachments and oxygen evolution from the surface were found to have a linear relationship. In addition, the intermediate molecules and surface bonds of MoS2 synthesized by MoO3 and H2S precursors were compared to those of a system using S2 and MoO3 precursors. The most stable subsidiary formation from the H2S precursor was found to be H2O, whereas in case of S2 precursor it was SO. These results provide a valuable insight in the formation of large-scale and high-quality 2D MoS2 by the CVD technique.

Localization of the Optical Phonon Modes in Boron Nitride Nanotubes: Mixing Effect of 10B Isotopes and Vacancies.

We explored the mixing effect of 10B isotopes and boron (B) or nitrogen (N) vacancies on the atomic vibrational properties of (10,0) single-wall boron nitride nanotubes (BNNTs). The forced oscillation technique was employed to evaluate the phonon modes for the entire range (0-100%) of 10B isotopes and atomic vacancy densities ranging from 0 to 30%. With increasing isotope densities, we noticed a blue shift of the Raman-active A1 phonon peak, whereas an increased density of mixed or independent B and N vacancies resulted in the emergence of a new low-frequency peak and the annihilation of the A1 peak in the phonon density of states. High-energy optical phonons were localized as a result of both 10B isotopes and the presence of mixing defects. We found an asymmetrical nature of the localization length with increasing 10B isotope content, which corresponds well to the isotope-inherited localization length of carbon nanotubes and monolayer graphene. The localization length falls abruptly with the increase in concentration of both atomic vacancies (B or N) and mixing defects (10B isotope and vacancies). These findings are critical for understanding heat conduction and nanoscopic vibrational investigations such as tip-enhanced Raman spectra in BNNTs, which can map local phonon energies.

Tribo-Piezoelectricity in Group III Nitride Bilayers: A Density Functional Theory Investigation.

The notable out-of-plane piezoelectric effect caused by the large electronegativity of the constituent elements makes two-dimensional (2D) group III nitrides appealing for nanoscale energy-harvesting applications. Here, we demonstrate by extensive density functional theory investigations that the vertical piezoelectricity is enhanced significantly in 2D XN (X = B, Al, Ga) bilayers due to in-plane interlayer sliding. The sliding operation generates tribological energy from the vertical resistance force between the monolayers. A maximum shear strength between the monolayers of 1-25 GPa is recorded during vertical sliding. We elucidate the tribo-piezoelectricity generation mechanism of XN bilayers using the tribological energy conversion to overcome the interfacial sliding barrier. The strongest out-of-plane piezoelectricity is found when the bilayers are in the A-A stacking arrangement. Any reduction in the interlayer distance between group III nitride bilayers enhances out-of-plane polarization due to the increase in sliding energy resistances, leading to an increased inductive voltage output. An induced voltage of ∼3.5 V is achieved during vertical compressive sliding of the upper layer. Using these phenomena, we present a compression-slide XN bilayer nanogenerator strategy capable of tuning the produced tribo-piezoelectric energy through sliding and compression.

Puckered Penta-like PdPX (X = O, S, Te) Semiconducting Nanosheets: First-Principles Study of the Mechanical, Electro-Optical, and Photocatalytic Properties.

The atomic, electronic, optical, and mechanical properties of penta-like two-dimensional PdPX (X = O, S, Te) nanosheets have been systematically investigated using density functional theory calculations. All three PdPX nanosheets exhibit dynamic and mechanical stability on the basis of an analysis of phonon dispersions and the Born criteria, respectively. The PdPX monolayers are found to be brittle structures. Our calculations demonstrate that the PdPX nanosheets exhibit semiconducting characteristics with indirect band gaps of 0.93 (1.99), 1.34 (2.11), and 0.74 (1.51) eV for X = O, S, Te, respectively, using the PBE (HSE06) functional, where PdPTe is the best material for visible-light photocatalytic water splitting. Our findings give important basic characteristics of penta-like two-dimensional PdPX materials and should motivate further theoretical and experimental investigations of these interesting materials.

Minimizing and Controlling Hydrogen for Highly Efficient Formamidinium Lead Triiodide Solar Cells.

Formamidinium lead triiodide (FAPbI3) currently holds the record conversion efficiency in the single-junction perovskite solar cell. Iodine management is known to be essential to suppress defect-induced nonradiative losses in FAPbI3 active layers. However, the origin of nonradiative losses and the underlying mechanism of suppressing such losses by iodine-concentration management remain unknown. Here, through first-principles simulation, we demonstrate that native point defects are not responsible for the nonradiative losses in FAPbI3. Instead, hydrogen ions, which can be abundant under both iodine-rich and iodine-poor conditions in FAPbI3, act as efficient nonradiative recombination centers and are proposed to be responsible for the suppressed power conversion efficiency. Moreover, iodine-moderate synthesis conditions can favor the formation of electrically inactive molecular hydrogen, which can dramatically suppress the detrimental hydrogen ions. This work identifies the dominant nonradiative recombination centers in the widely used FAPbI3 layers and rationalizes how the prevailing iodine management reduces the nonradiative losses. Minimizing the unintentional hydrogen incorporation in the perovskite is critical for achieving high device performance.

Vacancy-Induced Thermal Transport and Tensile Mechanical Behavior of Monolayer Honeycomb BeO.

Because of the rapid shrinking trend of integrated circuits, the performances of nanodevices and nanomechanical systems are greatly affected by the joule heating and mechanical failure dilemma. In addition, structural defects are inevitable during experimental synthesis of nanomaterials, which may alter their physical properties significantly. Investigation of the thermal transport and mechanical behavior of nanostructured materials with structural defects is thus a crucial requirement. In this study, the thermal conductivity (TC) and tensile mechanical behavior of monolayer honeycomb BeO are systematically explored using molecular dynamics simulations. An infinite length bulk TC of ∼277.77 ± 8.93 W/mK was found for the pristine monolayer BeO. However, the insertion of 1% single vacancy (SV) and double vacancy (DV) defects reduces the TC by ∼36.98 and ∼33.52%, respectively. On the other hand, the uniaxial tensile loading produces asymmetrical fracture stress, elastic modulus, and fracture strain behaviors in the armchair and zigzag directions. The elastic modulus was reduced by ∼4.7 and ∼6.6% for 1% SV defects along the armchair and zigzag directions, respectively, whereas the reduction was ∼2.7 and ∼ 5.1% for 1% DV defects. Moreover, because of the strong symmetry-breaking effect, both the TC and mechanical strength were significantly lower for the SV defects than those for the DV defects. The highly softening and decreasing trends of the phonon modes with increasing vacancy concentration and temperature, respectively, were noticed for both types of defects, resulting in a reduction of the TC of the defected structures. These findings will be helpful for the understanding of the heat transport and mechanical characteristics of monolayer BeO as well as provide guidance for the design and control of BeO-based nanoelectronic and nanoelectromechanical devices.

Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure.

Graphene based two-dimensional (2D) van der Waals (vdW) materials have attracted enormous attention because of their extraordinary physical properties. In this study, we explore the temperature and interlayer coupling induced thermal transport across the graphene/2D-SiC vdW interface using non-equilibrium molecular dynamics and transient pump probe methods. We find that the in-plane thermal conductivity κ deviates slightly from the 1/T law at high temperatures. A tunable κ is found with the variation of the interlayer coupling strength χ. The interlayer thermal resistance R across graphene/2D-SiC interface reaches 2.71 [Formula: see text] 10-7 [Formula: see text] at room temperature and χ = 1, and it reduces steadily with the elevation of system temperature and χ, demonstrating around 41% and 56% reduction with increasing temperature to 700 K and a χ of 25, respectively. We also elucidate the heat transport mechanism by estimating the in-plane and out-of-plane phonon modes. Higher phonon propagation possibility and Umklapp scattering across the interface at high temperatures and increased χ lead to the significant reduction of R. This work unveils the mechanism of heat transfer and interface thermal conductance engineering across the graphene/2D-SiC vdW heterostructure.

Calculating Entropies of Large Molecules in Aqueous Phase.

Entropy benchmarking of different sized molecules in aqueous phase is carried out for known solvation models, where we compare geometry and solvation cavity packing parameters, which allows us to improve the accuracy of the obtained entropy values using empirical corrections. A comparison of solvation entropy models is conducted for a benchmarking set of 56 molecules, showing how an accurate description of cavitation entropy and its hindrance on other entropy values is important for large-sized solute molecules. Finally, we compare reaction free energies with entropies calculated using the most accurate solvation model considered, where we demonstrate a significant improvement in the accuracy relative to experimental values.

Hydrogen-Anion-Induced Carrier Recombination in MAPbI3 Perovskite Solar Cells.

Identification and passivation of defect-induced electron-hole recombination centers are currently crucial for improving the efficiency of hybrid perovskite solar cells. Besides general intrinsic defects, experimental reports have indicated that hydrogen interstitials are also abundant in hybrid perovskite layers; however, few reports have evaluated the effect of such defects on the charge carrier recombination and device efficiencies. Here, we reveal that under I-poor synthesis conditions, the negatively charged monatomic hydrogen interstitial, Hi-, will form in the prototypical CH3NH3PbI3 perovskite layer, acting as a detrimental deep-level defect, which leads to efficient electron-hole recombination and lowers the cell performance. We further rationalize that Br doping can mitigate the large atomic displacement caused by the presence of Hi- and hence suppress the formation of the deep localized state. The results advance the knowledge of the deep-level defects in hybrid perovskites and provide useful information for enhancing solar cell performance by defect engineering.

Strong tribo-piezoelectric effect in bilayer indium nitride (InN).

The high electronegativity between the atoms of two-dimensional (2D) group-III nitrides makes them attractive to demonstrating a strong out-of-plane piezo-electricity effect. Energy harvesting devices can be predicted by cultivating such salient piezoelectric features. This work explores the tribo-piezoelectric properties of 2D-indium nitride (InN) as a promising candidate in nanogenerator applications by means of first-principles calculations. In-plane interlayer sliding between two InN monolayers leads to a noticeable rise of vertical piezoelectricity. The vertical resistance between the InN bilayer renders tribological energy by the sliding effect. During the vertical sliding, a shear strength of 6.6-9.7 GPa is observed between the monolayers. The structure can be used as a tribo-piezoelectric transducer to extract force and stress from the generated out-of-plane tribo-piezoelectric energy. The A-A stacking of the bilayer InN elucidates the highest out-of-plane piezoelectricity. Any decrease in the interlayer distance between the monolayers improves the out-of-plane polarization and thus, increases the inductive voltage generation. Vertical compression of bilayer InN produces an inductive voltage in the range of 0.146-0.196 V. Utilizing such a phenomenon, an InN-based bilayer compression-sliding nanogenerator is proposed, which can tune the generated tribo-piezoelectric energy by compressing the interlayer distance between the InN monolayers. The considered model can render a maximum output power density of ~ 73 mWcm-2 upon vertical sliding.

Superior tunable photocatalytic properties for water splitting in two dimensional GeC/SiC van der Waals heterobilayers.

The photocatalytic characteristics of two-dimensional (2D) GeC-based van der Waals heterobilayers (vdW-HBL) are systematically investigated to determine the amount of hydrogen (H2) fuel generated by water splitting. We propose several vdW-HBL structures consisting of 2D-GeC and 2D-SiC with exceptional and tunable optoelectronic properties. The structures exhibit a negative interlayer binding energy and non-negative phonon frequencies, showing that the structures are dynamically stable. The electronic properties of the HBLs depend on the stacking configuration, where the HBLs exhibit direct bandgap values of 1.978 eV, 2.278 eV, and 2.686 eV. The measured absorption coefficients for the HBLs are over ~ 105 cm-1, surpassing the prevalent conversion efficiency of optoelectronic materials. In the absence of external strain, the absorption coefficient for the HBLs reaches around 1 × 106 cm-1. With applied strain, absorption peaks are increased to ~ 3.5 times greater in value than the unstrained HBLs. Furthermore, the HBLs exhibit dynamically controllable bandgaps via the application of biaxial strain. A decrease in the bandgap occurs for both the HBLs when applied biaxial strain changes from the compressive to tensile strain. For + 4% tensile strain, the structure I become unsuitable for photocatalytic water splitting. However, in the biaxial strain range of - 6% to + 6%, both structure II and structure III have a sufficiently higher kinetic potential for demonstrating photocatalytic water-splitting activity in the region of UV to the visible in the light spectrum. These promising properties obtained for the GeC/SiC vdW heterobilayers suggest an application of the structures could boost H2 fuel production via water splitting.

Thermal transport in monolayer zinc-sulfide: effects of length, temperature and vacancy defects.

Of late, atomically thin two-dimensional zinc-sulfide (2D-ZnS) shows great potential for advanced nanodevices and as a substitute to graphene and transition metal di-chalcogenides owing to its exceptional optical and electronic properties. However, the functional performance of nanodevices significantly depends on the effective heat management of the system. In this paper, we explored the thermal transport properties of 2D-ZnS through molecular dynamics simulations. The impact of length, temperature, and vacancy defects on the thermal properties of 2D-ZnS are systematically investigated. We found that the thermal conductivity (TC) rises monotonically with increasing sheet length, and the bulk TC of ∼30.67 W mK-1is explored for an infinite length ZnS. Beyond room temperature (300 K), the TC differs from the usual 1/Trule and displays an abnormal, slowly declining behavior. The point vacancy (PV) shows the largest decrease in TC compared to the bi vacancy (BV) defects. We calculated phonon modes for various lengths, temperatures, and vacancies to elucidate the TC variation. Conversely, quantum corrections are used to avoid phonon modes' icing effects on the TC at low temperatures. The obtained phonon density of states (PDOS) shows a softening and shrinking nature with increasing temperature, which is responsible for the anomaly in the TC at high temperatures. Owing to the increase of vacancy concentration, the PDOS peaks exhibit a decrease for both types of defects. Moreover, the variation of the specific heat capacity and entropy with BV and PV signify our findings of 2D-ZnS TC at diverse concentrations along with the different forms of vacancies. The results elucidated in this study will be a guide for efficient heat management of ZnS-based optoelectronic and nano-electronic devices.