RESUMO
Silicon photonics is rapidly evolving as an advanced chip framework for implementing quantum technologies. With the help of silicon photonics, general-purpose programmable networks with hundreds of discrete components have been developed. These networks can compute quantum states generated on-chip as well as more extraordinary functions like quantum transmission and random number generation. In particular, the interfacing of silicon photonics with complementary metal oxide semiconductor (CMOS) microelectronics enables us to build miniaturized quantum devices for next-generation sensing, communication, and generating randomness for assembling quantum computers. In this review, we assess the significance of silicon photonics and its interfacing with microelectronics for achieving the technology milestones in the next generation of quantum computers and quantum communication. To this end, especially, we have provided an overview of the mechanism of a homodyne detector and the latest state-of-the-art of measuring squeezed light along with its integration on a photonic chip. Finally, we present an outlook on future studies that are considered beneficial for the wide implementation of silicon photonics for distinct data-driven applications with maximum throughput.
RESUMO
An important design approach for sensitive and robust surface enhanced Raman scattering (SERS) substrates is the use of metal nanoparticle aggregates with nanometer tailored interstitial distances between their surfaces, in order to confine the electromagnetic energy. The nanostructural instability of the aggregates to agglomeration due to their strong van der Waals force poses a challenge for the preparation of large-scale, reliable SERS substrates. We present a novel route for preparing stable and highly active SERS substrates using polymer-metal fractal nanocomposites. This methodology is based on the unique morphology of fractal nanocomposite structures formed just below the percolation threshold that consists of extremely narrow (approximately 0.8 nm) interstitial polymer junctions between the Ag nanoparticle aggregates along with the appropriate nanoscale (<100 nm) surface roughness. Such nanomorphology allows the formation of well-defined and large numbers of hot spots where the localization of electromagnetic energy can result in very large enhancement of the Raman signal. We applied a simple plasma etching process to remove the polymer structures that allowed the formation of Ag structures with very uniform and controllable inter-particle gaps that were proved to provide significant SERS enhancement of typical biological systems such as double-stranded deoxyribonucleic acid (dsDNA). These advanced nanocomposite films could be used for the development of large-scale spectroscopy-based sensors for direct detection and analysis of various biological and chemical samples.
