Feasibility analysis of inactivating influenza A(H1N1) virus using UVC robot in classroom environment.

Background: Starting from 2009, H1N1 has been one of the respiratory diseases that afflict the global population. Concurrently, due to the influence of COVID-19, it has become widely accepted that preventing the virus's spread necessitates personal protection measures and disinfection in public spaces. Experiments: This study conducted two experiments. In the classroom experiment, six UVC dose test points were calibrated to test whether the UVC dose at each testing point met the standards for inactivating IAVs and the time required to meet the standards. In the simulated classroom experiment, seven square slides made of IAVs were placed. After 10 min of robot movement, irradiated sterile square slides were made into suspension and injected into chicken embryos. Cultivate chicken embryos and conduct IAVs testing. Results: Classroom experiment has shown that 5 testing points can meet the standards for inactivating IAVs(3 mJ/cm2), with a required time of 80 min, 40 min, 15 min, 5 min and 10 min. The UVC dose for testing points that do not meet the standards in 80 min is only 0.5 mJ/cm2. The simulation classroom experiment outcomes revealed that 99.99 % of IAVs were deactivated. Furthermore, this study established both a desktop control group and a chair arm control group, both of which yielded identical results, indicating an inactivation logarithm of IAVs≥4log. Conclusion: The study presented that IAVs on the surface of an object can be effectively and rapidly deactivated at an irradiation density of 1.8 mW/cm2. Meanwhile, the study provides evidence of the feasibility of using the GXU robot to inactivate IAVs in a classroom environment.

Optical and Electrical Properties of AlxGa1-xN/GaN Epilayers Modulated by Aluminum Content.

AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order to realize these potentials, it is critical to understand the factors that influence the optical and electrical properties of the device. In this work, AlxGa1-xN (x = 0.24, 0.34, 0.47) epilayers grown on c-plane patterned sapphire substrate with GaN template by the metal organic chemical vapor deposition (MOCVD). It is demonstrated that the increase of the aluminum content leads to the deterioration of the surface morphology and crystal quality of the AlGaN epitaxial layer. The dislocation densities of AlxGa1-xN epilayers were determined from symmetric and asymmetric planes of the ω-scan rocking curve and the minimum value is 1.01 × 109 cm-2. The (101¯5) plane reciprocal space mapping was employed to measure the in-plane strain of the AlxGa1-xN layers grown on GaN. The surface barrier heights of the AlxGa1-xN samples derived from XPS are 1.57, 1.65, and 1.75 eV, respectively. The results of the bandgap obtained by PL spectroscopy are in good accordance with those of XRD. The Hall mobility and sheet electron concentration of the samples are successfully determined by preparing simple indium sphere electrodes.

Dual-coupling effect enables a high-performance self-powered UV photodetector.

Self-powered ultraviolet photodetectors generally operate by utilizing the built-in electric field within heterojunctions or Schottky junctions. However, the effectiveness of self-powered detection is severely limited by the weak built-in electric field. Hence, advances in modulating the built-in electric field within heterojunctions are crucial for performance breakthroughs. Here, we suggest a method to enhance the built-in electric field by taking advantage of the dual-coupling effect between heterojunction and the self-polarization field of ferroelectrics. Under zero bias, the fabricated AgNWs/TiO2/PZT/GaN device achieves a responsivity of 184.31 mA/W and a specific detectivity of 1.7 × 1013 Jones, with an on/off ratio of 8.2 × 106 and rise/decay times reaching 0.16 ms/0.98 ms, respectively. The outstanding properties are primarily attributed to the substantial self-polarization of PZT induced by the p-GaN and the subsequent enhancement of the built-in electric field of the TiO2/PZT heterojunction. Under UV illumination, the dual coupling of the enhanced heterojunction and the self-polarizing field synergistically boost the photo-generated carrier separation and transport, leading to breakthroughs in ferroelectric-based self-powered photodetectors.

Solid-state fermentation by S. cerevisiae with high resistance to ferulic acid improves the physicochemical properties of wheat bran and quality of bran-rich Chinese steamed bread.

Wheat bran has numerous health benefits, but its poor processing and sensory properties limit its application in the staple food industry. Fermentation by S. cerevisiae changes the performance of wheat bran. However, high levels of ferulic acid (FA) inhibit S. cerevisiae. The effects of solid-state fermentation of S. cerevisiae with high resistance to FA on the physicochemical properties of wheat bran and the quality of bran-rich Chinese steamed bread (CSB) were investigated. The results showed that the growth of S. cerevisiae was inhibited by FA in a dose-dependent manner. Short-term adaptation strategies efficiently improved the tolerance of S. cerevisiae to FA stress. Compared with the parental strain (PS), fermentation of the short-term adapted strains (adapted strains) significantly increased the FA, total phenol, and soluble dietary fiber content in wheat bran. Wheat bran fermented by the adapted strains had a higher antioxidant capacity than wheat bran fermented by PS. In addition, compared with the PS, the wheat bran fermented by the adapted strains can decrease the hardness, improve the specific volume, and the quality of CSB. Thus, solid-state fermentation of the adapted strain is a potentially effective method to improve the nutritional and physicochemical properties of wheat bran as a cereal food ingredient.

Epitaxy of (11-22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy.

AlN epilayers were grown on magnetron-sputtered (MS) (11-22) AlN buffers on m-plane sapphire substrates at 1450 °C via hydride vapour phase epitaxy (HVPE). The MS buffers were annealed at high temperatures of 1400-1600 °C. All the samples were characterised using X-ray diffraction, atomic force microscopy, scanning electron microscope and Raman spectrometry. The crystal quality of epilayers regrown by HVPE was improved significantly compared to that of the MS counterpart. With an increasing annealing temperature, the crystal quality of both MS buffers and AlN epilayers measured along [11-23] and [1-100] improved first and then decreased, maybe due to the decomposition of MS buffers, while the corresponding anisotropy along the two directions decreased first and then increased. The optimum quality of the AlN epilayer was obtained at the annealing temperature of around 1500 °C. In addition, it was found that the anisotropy for the epilayers decreased significantly compared to that of annealed MS buffers when the annealing temperature was below 1500 °C.

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.

The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach's binding energy and optical bandgap (Eg) derived by optical transmission (OT) and SE depend on crystallite size, crystalline alignment, and film thickness, which are in good agreement with XRD and SEM results. It is concluded that under the treatment of thickening film, the essence of crystal quality is improved. The bandgap energies of AlN samples obtained from SE possess larger values and higher accuracy than those extracted from OT. The Bose-Einstein relation is used to demonstrate the bandgap variation with temperature, and it is indicated that the thermal stability of bandgap energy can be improved with an increase in film thickness. It is revealed that when the thickness increases to micrometer order, the thickness has little effect on the change of Eg with temperature.

Direct Synthesis of Vertical Self-Assembly Oriented Hexagonal Boron Nitride on Gallium Nitride and Ultrahigh Photoresponse Ultraviolet Photodetectors.

The applications of three-dimensional materials combined with two-dimensional materials are attractive for constructing high-performance electronic and photoelectronic devices because of their remarkable electronic and optical properties. However, traditional preparation methods usually involve mechanical transfer, which has a complicated process and cannot avoid contamination. In this work, chemical vapor deposition was proposed to vertically synthesize self-assembly oriented hexagonal boron nitride on gallium nitride directly. The material composition, crystalline quality and orientation were investigated using multiple characterization methods. Thermal conductivity was found to be enhanced twofold in the h-BN incorporated sample by using the optothermal Raman technique. A vertical-ordered (VO)h-BN/GaN heterojunction photodetector was produced based on the synthesis. The photodetector exhibited a high ultraviolet photoresponsivity of up to 1970.7 mA/W, and detectivity up to 2.6 × 1013 Jones, and was stable in harsh high temperature conditions. Our work provides a new synthesis method to prepare h-BN on GaN-based materials directly, and a novel vertically oriented structure of VO-h-BN/GaN heterojunction, which has great application potential in optoelectronic devices.

Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method.

Bulk aluminum nitride (AlN) crystals with different polarities were grown by physical vapor transport (PVT). The structural, surface, and optical properties of m-plane and c-plane AlN crystals were comparatively studied by using high-resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Temperature-dependent Raman measurements showed that the Raman shift and the full width at half maximum (FWHM) of the E2 (high) phonon mode of the m-plane AlN crystal were larger than those of the c-plane AlN crystal, which would be correlated with the residual stress and defects in the AlN samples, respectively. Moreover, the phonon lifetime of the Raman-active modes largely decayed and its line width gradually broadened with the increase in temperature. The phonon lifetime of the Raman TO-phonon mode was changed less than that of the LO-phonon mode with temperature in the two crystals. It should be noted that the influence of inhomogeneous impurity phonon scattering on the phonon lifetime and the contribution to the Raman shift came from thermal expansion at a higher temperature. In addition, the trend of stress with increasing 1000/temperature was similar for the two AlN samples. As the temperature increased from 80 K to ~870 K, there was a temperature at which the biaxial stress of the samples transformed from compressive to tensile stress, while their certain temperature was different.

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers.

The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization of high-efficiency deep ultraviolet light-emitting diodes. The micro-strains of 0.18 × 10-3 cm-2 for flat substrate AlN and 0.11 × 10-3 cm-2 for nano-patterned substrate AlN are obtained by X-ray diffractometer (XRD). The screw and edge dislocation densities of samples are determined by XRD and transmission electron microscope (TEM), and the results indicate that the nano-patterned substrates are effective in reducing the threading dislocation density. The mechanism of the variation of the threading dislocation in AlN films grown on flat and nano-patterned substrates is investigated comparatively. The etch pit density (EPD) determined by preferential chemical etching is about 1.04 × 108 cm-2 for AlN grown on a nano-patterned substrate, which is slightly smaller than the results obtained by XRD and TEM investigation. Three types of etch pits with different sizes are all revealed on the AlN surface using the hot KOH etching method.

Reliability Analysis of AlGaN-Based Deep UV-LEDs.

The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220-240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep UV-LEDs is highly demanding for mass adoption. Over the last two decades, several research groups have worked out that the optical power of GaN-based LEDs significantly decreases during operation, and with the passage of time, many mechanisms responsible for the degradation of such devices start playing their roles. Only a few attempts, to explore the reliability of these LEDs, have been presented so far which provide very little information on the output power degradation of these LEDs with the passage of time. Therefore, the aim of this review is to summarize the degradation factors of AlGaN-based near UV-LEDs emitting in the range of 200-350 nm by means of combined optical and electrical characterization so that work groups may have an idea of the issues raised to date and to achieve a wavelength range needed for disinfecting the environment from SARS-CoV-2. The performance of devices submitted to different stress conditions has been reviewed for the reliability of AlGaN-based UV-LEDs based on the work of different research groups so far, according to our knowledge. In particular, we review: (1) fabrication strategies to improve the efficiency of UV-LEDs; (2) the intensity of variation under constant current stress for different durations; (3) creation of the defects that cause the degradation of LED performance; (4) effect of degradation on C-V characteristics of such LEDs; (5) I-V behavior variation under stress; (6) different structural schemes to enhance the reliability of LEDs; (7) reliability of LEDs ranging from 220-240 nm; and (8) degradation measurement strategies. Finally, concluding remarks for future research to enhance the reliability of near UV-LEDs is presented. This draft presents a comprehensive review for industry and academic research on the physical properties of an AlGaN near UV-LEDs that are affected by aging to help LED manufacturers and end users to construct and utilize such LEDs effectively and provide the community a better life standard.

Beam manipulation for quantum dot light-emitting diode with an Ag grating and a phase-gradient metasurface.

The quantum dot (QD) light-emitting diode (LED) is a robust scheme for single photon source. However, the spontaneous emission of a QD LED has arbitrary directions and polarizations, which is disadvantage for photon collection and manipulation. We propose a QD LED integrated with an Ag grating and a phase-gradient metasurface. The circular patterned Ag grating is adopted to collimate the emission beam with right phase and improve its spatial coherence, therefore a phase-gradient metasurface can work for beam manipulation. The 10°, 20°, and 30° angle deflection as well as doughnut-pattern generation are demonstrated by numerical simulation. A small metasurface with the width of 6 µm can provide a collection efficiency of 25.9% at the deflection angle of 10°. Furthermore, only one single QD can be selected from a QD assembly with a low-density.

Hexagonal Boron Nitride on III-V Compounds: A Review of the Synthesis and Applications.

Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III-V compounds are systematically summarized, and the prospects are discussed.

Friction-Dominated Carrier Excitation and Transport Mechanism for GaN-Based Direct-Current Triboelectric Nanogenerators.

The semiconductor triboelectric nanogenerator (TENG) based on the tribovoltaic effect has the characteristics of direct current and high current density, but the energy transfer and conversion mechanism is not completely clear. Here, a series of gallium nitride (GaN)-based semiconductor direct-current TENGs (SDC-TENGs) are investigated for clarifying the carrier excitation and transport mechanism. During the friction process, the external output current always flows from GaN to silicon or aluminum, regardless of the direction of the built-in electric field, because of the semiconductor types. These results reveal that the carrier transport direction is dominated by the interfacial electric field formed by triboelectrification, which is also verified under different bias voltages. Moreover, the characteristics dependent on the frictional force have been systematically investigated under different normal forces and frictional modes. The open-circuit voltage and short-circuit current of SDC-TENG are both increased with a larger frictional force, which shows that the more severe friction results in both a larger interface electric field and more excited carriers. The maximum voltage can reach 25 V for lighting up a series of LEDs, which is enhanced by four times compared to the cutting-edge reported SDC-TENGs. This work has clarified the friction-dominated carrier excitation and transport mechanism for the tribovoltaic effect, which demonstrates the great potential of semiconductor materials for frictional energy recovery and utilization.

High-Efficiency and Stable Perovskite Photodetectors with an F4-TCNQ-Modified Interface of NiOx and Perovskite Layers.

Nickel oxide (NiOx), a typical p-type semiconductor, is emerging as the most promising hole transport layer material. However, the inferior interfacial contact of the NiOx/perovskite interface has limited the improvement of the performance of photodetectors (PDs). In this work, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) is introduced to modify the NiOx/perovskite interface to prepare high-performance PDs. This study shows that the F4-TCNQ layer interacts with the NiOx/perovskite layers. It can increase the Ni3+/Ni2+ ratio and then enhance the hole extraction and charge carrier mobility; on the contrary, it can form a new Lewis adduct and passivate the undercoordinated Pb2+ ions. Furthermore, with the F4-TCNQ modification, the perovskite film exhibits good thermal stability and photostability. The PDs demonstrate excellent photoelectric properties and long-term stability in the atmosphere. This finding provides a simple and efficient way to further develop the NiOx/perovskite interface.

Surface Plasmon Enhancement of an InGaN Quantum Well Using Nanoparticles Made of Different Metals and Their Combinations.

Surface plasmon (SP) enhancement of photoluminescence (PL) from a green-emitting InGaN/GaN quantum well (QW) using nanoparticles (NPs) made of different metals and their combinations was investigated. The NPs were formed by annealing the metal films in N2 followed by rapid cooling. Four-fold enhancement in PL intensity was achieved using random metal NPs made of Cu on Mg (Cu-Mg) double metal film that was more than two folds of the enhancement observed by AgNPs. Reversing the order of metal film deposition (Mg on Cu) resulted in much lower PL intensity due to significantly different NPs size distribution as the given annealing conditions did not cause homogeneous alloying of the two metals. The results pave the way for the application of NPs of relatively low-cost unconventional metals and their combinations in the SP enhancement of LEDs.

Resonant Raman Scattering in Boron-Implanted GaN.

A small Boron ion (B-ion) dose of 5 × 1014 cm-2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA). The resonant Raman spectrum (RRS) showed a strong characteristic of a photoluminescence (PL) emission peak associated with GaN before B-ion implantation and RTA treatment. The PL signal decreased significantly after the B-ion implantation and RTA treatment. The analysis of temperature-dependent Raman spectroscopy data indicated the activation of two transitions in B-ion-implanted GaN in different temperature ranges with activation energies of 66 and 116 meV. The transition energies were estimated in the range of 3.357-3.449 eV through calculations. This paper introduces a calculation method that can be used to calculate the activation and transition energies, and it further highlights the strong influence of B-ion implantation on the luminesce of GaN.

Improvement of Crystal Quality of AlN Films with Different Polarities by Annealing at High Temperature.

High-quality AlN film is a key factor affecting the performance of deep-ultraviolet optoelectronic devices. In this work, high-temperature annealing technology in a nitrogen atmosphere was used to improve the quality of AlN films with different polarities grown by magnetron sputtering. After annealing at 1400-1650 °C, the crystal quality of the AlN films was improved. However, there was a gap between the quality of non-polar and polar films. In addition, compared with the semi-polar film, the quality of the non-polar film was more easily improved by annealing. The anisotropy of both the semi-polar and non-polar films decreased with increasing annealing temperature. The results of Raman spectroscopy, scanning electron microscopy and X-ray photoelectron spectroscopy revealed that the annihilation of impurities and grain boundaries during the annealing process were responsible for the improvement of crystal quality and the differences between the films with different polarities.

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs.

AlGaN/GaN heterojunction-based high-electron-mobility transistors (HEMTs) have significant advantages of high carrier concentration, high electron mobility, and large breakdown voltage, and show promising potential as power devices. Being widely used in semiconductor manufacturing, dry etching process is capable of fabricating microstructures and thinning substrate from backside, which is good for developing flexible devices. Here, we investigate the effect of backside dry etching of Si substrate on the physical and electrical properties of AlGaN/GaN HEMTs. The physical properties were characterized by scanning electron microscope, Raman spectra, and x-ray diffraction (XRD). After the dry etching process, the peak red-shift of GaNE2mode indicates an increase of tensile stress, and the XRD rocking curve of GaN film shows to a certain extent decreased dislocation density. Furthermore, the maximum saturation current density and maximum transconductance of the HEMTs are improved by 21.1% and 25.5%, respectively. The approach of backside dry etching for thinning Si substrate would contribute to the optimization of GaN heterojunction-based devices, and also provide inspirations for the development of flexible and robust power devices.

Enhanced Heat Dissipation in Gallium Nitride-Based Light-Emitting Diodes by Piezo-phototronic Effect.

As a new generation of light sources, GaN-based light-emitting diodes (LEDs) have wide applications in lighting and display. Heat dissipation in LEDs is a fundamental issue that leads to a decrease in light output, a shortened lifespan, and the risk of catastrophic failure. Here, the temperature spatial distribution of the LEDs is revealed by using high-resolution infrared thermography, and the piezo-phototronic effect is proved to restrain efficaciously the temperature increment for the first time. We observe the temperature field and current density distribution of the LED array under external strain compensation. Specifically, the temperature rise caused by the self-heating effect is reduced by 47.62% under 0.1% external strain, which is attributed to the enhanced competitiveness of radiative recombination against nonradiative recombination due to the piezo-phototronic effect. This work not only deepens the understanding of the piezo-phototronic effect in LEDs but also provides a novel, easy-to-implement, and economical method to effectively enhance thermal management.

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances.

Surface plasmon (SP)-enhanced quantum-well (QW) LEDs have proved their potential in replacing conventional lighting devices for their high-performance capabilities in ultraviolet (UV), blue and green spectral ranges. The SP-enhanced QW-LEDs have applications in light emission enhancement, light polarization, color conversion, and speed modulation. The electric field of the plasmonic mode of a metal couples with the exciton energy of QWs in resonance results in efficiency enhancement to several folds. The strength of the SP-QW coupling is mainly influenced by the type of metal used for SP enhancement, the metal nanostructure geometry, and the penetration depth of the SP fringing field in the p-GaN. The use of an appropriate dielectric interlayer between the metal and the p-GaN allows further control over SP resonance with QW emission wavelength. The penetration depth defines the p-GaN thickness and the QW period number for effective SP-QW coupling. The optimization of these parameters is key to achieve high efficiencies in SP-enhanced QW-LEDs for various applications. This review explains the SP enhancement mechanism and the key challenges facing the SP enhancement of QW-LEDs. The main factors that affect the SP-QW coupling have been explained in detail based on recent reports devoted to this field.