Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride.

We present a novel strategy to create a van der Waals-based magnetic tunnel junction (MTJ) comprising a three-atom layer of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) layers by introducing a monoatomic boron vacancy in each hBN layer. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT) and the transmission probability of the MTJ was investigated using the Landauer-Büttiker formalism within the non-equilibrium Green function method. The Stoner gap was created between the spin-majority channel and the spin-minority channel on the local density of states of the hBN monoatomic boron-vacancy (VB) near the Fermi energy, creating a possible control of the spin valve by considering two magnetic alignment of hBN(VB) layers, anti-parallel configuration (APC) and parallel configuration (PC). The transmission probability calculation results showed a high electron transmission in the PC of the hBN(VB) layers and a low transmission when the APC was considered. A high tunneling magnetoresistance (TMR) ratio of approximately 400% was observed when comparing the APC and PC of the hBN(VB) layers in hBN(VB)/Gr/hBN(VB), giving the highest TMR ratio for the thinnest MTJ system.

Flower like-novel nanocomposite of Mg(Ti0.99Sn0.01)O3decorated on reduced graphene oxide (rGO) with high capacitive behavior as supercapacitor electrodes.

In this study, ceramic materials of Mg(Ti0.99Sn0.01)O3were synthesized and decorated on reduced graphene oxide, forming a nanocomposite of rGO/Mg(Ti0.99Sn0.01)O3(rGO/MTS001). The successful synthesis results were confirmed by XRD, UV-vis analysis, FT-IR, and SEM-EDS. The MTS001 has a flower-like morphology from scanning electron microscopy (SEM) analysis, and the nanocomposites of rGO/MTS001 showed MTS001 particles decorated on the rGO's surface. The electrochemical performance of rGO/MTS001 and MTS001 was investigated by determining the specific capacitance obtained in 1 M H2SO4solution by cyclic voltammetry, followed by galvanostatic charge-discharge analysis using a three-electrode setup. The rGO/MTS001 achieved a specific capacitance of 361.97 F g‒1, compared to MTS001 (194.90 F g‒1). The capacitance retention of rGO/MTS001 nanocomposite also depicted excellent cyclic stability of 95.72% after 5000 cycles at a current density of 0.1 A g‒1. The result showed that the nanocomposite of ceramics with graphene materials has a potential for high-performance supercapacitor electrodes.

Colossal in-plane magnetoresistance ratio of graphene sandwiched with Ni nanostructures.

In this study, we present a theoretical study on the in-plane conductance of graphene partially sandwiched between Ni(111) nanostructures with a width of ∼12.08 Å. In the sandwiched part, the gapped Dirac cone of the graphene was controlled using a pseudospin by changing the magnetic alignment of the Ni(111) nanostructures. Upon considering the antiparallel configuration of Ni(111) nanostructures, the transmission probability calculation of the in-plane conductance of graphene shows a gap-like transmission at E - E F = 0.2 and 0.65 eV from the pd-hybridization and controllable Dirac cone of graphene, respectively. In the parallel configuration, the transmission probability calculation showed a profile similar to that of the pristine graphene. High and colossal magnetoresistance ratios of 284% and 3100% were observed at E - E F = 0.65 eV and 0.2 eV, respectively. Furthermore, a magnetoresistance beyond 3100% was expected at E - E F = 0.65 eV when the width of the Ni(111) nanostructures on the nanometer scale was considered.

High magnetoresistance of a hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission.

This work presents an ab initio study of a few-layer hexagonal boron nitride (hBN) and hBN-graphene heterostructure sandwiched between Ni(111) layers. The aim of this study is to understand the electron transmission process through the interface. Spin-polarized density functional theory calculations and transmission probability calculations were conducted on Ni(111)/nhBN/Ni(111) with n = 2, 3, 4, and 5 as well as on Ni(111)/hBN-Gr-hBN/Ni(111). Slabs with magnetic alignment in an anti-parallel configuration (APC) and parallel configuration (PC) were considered. The pd-hybridizations at both the upper and lower interfaces between the Ni slabs and hBN were found to stabilize the system. The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit a high tunneling magnetoresistance (TMR) ratio at ∼0.28 eV for n = 2 and 0.34 eV for n > 2, which are slightly higher than the Fermi energy. The observed shifting of this high TMR ratio originates from the transmission of electrons through the surface states of the d z 2 -orbital of Ni atoms at interfaces which are hybridized with the p z -orbital of N atoms. In the case of n > 2, the proximity effect causes an evanescent wave, contributing to decreasing transmission probability but increasing the TMR ratio. However, the TMR ratio, as well as transmission probability, was found to be increased upon replacing the unhybridized hBN layer of the Ni/3hBN/Ni MTJ with graphene, thus yielding Ni/hBN-Gr-hBN/Ni. A TMR ratio as high as ∼1200% was observed at an energy of 0.34 eV, which is higher than the Fermi energy. Furthermore, a design is proposed for a device based on a new reading mechanism using the high TMR ratio observed just above the Fermi energy level.