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1.
J Microelectromech Syst ; 21(4): 882-896, 2012 Apr 10.
Artigo em Inglês | MEDLINE | ID: mdl-24431925

RESUMO

We report here a successful demonstration of a flip-chip packaging approach for a microelectromechanical systems (MEMS) device with in-plane movable microelectrodes implanted in a rodent brain. The flip-chip processes were carried out using a custom-made apparatus that was capable of the following: 1) creating Ag epoxy microbumps for first-level interconnect; 2) aligning the die and the glass substrate; and 3) creating non-hermetic encapsulation (NHE). The completed flip-chip package had an assembled weight of only 0.5 g significantly less than the previously designed wire-bonded package of 4.5 g. The resistance of the Ag bumps was found to be negligible. The MEMS micro-electrodes were successfully tested for its mechanical movement with microactuators generating forces of 450 µN with a displacement resolution of 8.8 µm/step. An NHE on the front edge of the package was created by patterns of hydrophobic silicone microstructures to prevent contamination from cerebrospinal fluid while simultaneously allowing the microelectrodes to move in and out of the package boundary. The breakdown pressure of the NHE was found to be 80 cm of water, which is significantly (4.5-11 times) larger than normal human intracranial pressures. Bench top tests and in vivo tests of the MEMS flip-chip packages for up to 75 days showed reliable NHE for potential long-term implantation.

2.
J Microelectromech Syst ; 21(5): 1172-1186, 2012 Jul 13.
Artigo em Inglês | MEDLINE | ID: mdl-24431926

RESUMO

This paper presents a new actuation scheme for in-plane bidirectional translation of polysilicon microelectrodes. The new Chevron-peg actuation scheme uses microelectromechanical systems (MEMS) based electrothermal microactuators to move microelectrodes for brain implant applications. The design changes were motivated by specific needs identified by the in vivo testing of an earlier generation of MEMS microelectrodes that were actuated by the Chevron-latch type of mechanism. The microelectrodes actuated by the Chevron-peg mechanism discussed here show improved performance in the following key areas: higher force generation capability (111 µN per heat strip compared to 50 µN), reduced power consumption (91 mW compared to 360 mW), and reliable performance with consistent forward and backward movements of microelectrodes. Failure analysis of the Chevron-latch and the Chevron-peg type of actuation schemes showed that the latter is more robust to wear over four million cycles of operation. The parameters for the activation waveforms for Chevron-peg actuators were optimized using statistical analysis. Waveforms with a 1-ms time period and a 1-Hz frequency of operation showed minimal error between the expected and the actual movement of the microelectrodes. The new generation of Chevron-peg actuators and microelectrodes are therefore expected to enhance the longevity and performance of implanted microelectrodes in the brain. [2011-0341].

3.
J Microelectromech Syst ; 21(1): 132-144, 2011 Nov 03.
Artigo em Inglês | MEDLINE | ID: mdl-24504168

RESUMO

Flip-chip packaging is desirable for microelectro-mechanical systems (MEMS) devices because it reduces the overall package size and allows scaling up the number of MEMS chips through 3-D stacks. In this report, we demonstrate three novel techniques to create first-level interconnect (FLI) on MEMS: 1) Dip and attach technology for Ag epoxy; 2) Dispense technology for solder paste; 3) Dispense, pull, and attach technology (DPAT) for solder paste. The above techniques required no additional microfabrication steps, produced no visible surface contamination on the MEMS active structures, and generated high-aspect-ratio interconnects. The developed FLIs were successfully tested on MEMS moveable microelectrodes microfabricated by SUMMiTVTM process producing no apparent detrimental effect due to outgassing. The bumping processes were successfully applied on Al-deposited bond pads of 100 µm × 100 µm with an average bump height of 101.3 µm for Ag and 184.8 µm for solder (63Sn, 37Pb). DPAT for solder paste produced bumps with the aspect ratio of 1.8 or more. The average shear strengths of Ag and solder bumps were 78 MPa and 689 kPa, respectively. The electrical test on Ag bumps at 794 A/cm2 demonstrated reliable electrical interconnects with negligible resistance. These scalable FLI technologies are potentially useful for MEMS flip-chip packaging and 3-D stacking.

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