Analysis of the Ink-Stream Break-Up Phenomenon in Continuous Inkjet Printing.

The ink-stream break-up phenomenon in continuous inkjet printers has been studied herein. A numerical model has been developed to reproduce and analyze the non-monotonic behavior of ink-stream break-up length (BUL) against the amplitude of piezo-actuator oscillation. That is, when the amplitude is increased, the BUL initially decreases to a local minimum point, then increases to a local maximum point, and finally decreases again. The developed model is split into two stages, first being the emergence of periodic "initial indentation" on ink stream caused by piezo-oscillation and the second being the growth of indentation. Finally, the calculated results of BUL against oscillation amplitude is compared with experimental data. We confirmed that the model well reproduces the characteristic of BUL and clarified the emergence mechanism of its local minimum and maximum points.

Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser.

Silicon (Si) monolithic lasers are key devices in large-scale, high-density photonic integrated circuits. Germanium (Ge) is promising as an active layer due to the complementary metal-oxide semiconductor process compatibility with Si. A net optical gain from Ge is essential to demonstrate lasing operation. We fabricated Ge waveguides and investigated the n-type doping effect on the net optical gain. The estimated net gain of the n-Ge waveguide increased from -2200 to -500/cm, namely reducing loss, under optically pumped condition.

Formation mechanism of one-dimensional Si islands on a H/Si(001) surface.

The formation mechanism of one-dimensional Si islands on a H/Si(001)-(2x1) surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation.

Dopant-pair structures segregated on a hydrogen-terminated Si(100) surface.

Novel atomic structures on a H-terminated Si(100)-(2x1)-H surface were found using scanning tunneling microscopy (STM). The structures are distinguishable only from Si dimers in empty-state STM images. They were observed on arsenic- and phosphorus-doped substrates, but not on boron-doped substrates. Surface density of these structures was found to be proportional to the dopant density in the substrate. First-principles calculations clarify that they are consisting of dopant pairs that are segregated from the bulk material. Hydrogen atoms attached to the dopant pair are found to flip between two positions on the surface due to a quantum effect.

Gate-induced band ferromagnetism in an organic polymer.

We propose that a chain of five-membered rings (polyaminotriazole) should be ferromagnetic with an appropriate doping that is envisaged to be feasible with a field-effect transistor structure. The ferromagnetism is confirmed by a spin density functional calculation, which also shows that ferromagnetism survives the Peierls instability. We explain the magnetism in terms of the Mielke and Tasaki flatband ferromagnetism with the Hubbard model. This opens a new possibility of band ferromagnetism in purely organic polymers.