Design considerations for future radionuclide aerosol monitoring systems.

Pacific Northwest National Laboratory (PNNL) staff developed the Radionuclide Aerosol Sampler Analyzer (RASA) for worldwide aerosol monitoring in the 1990s. Recently, researchers at PNNL and Creare, LLC, have investigated possibilities for how RASA could be improved, based on lessons learned from more than 15 years of continuous operation, including during the Fukushima Daiichi Nuclear Power Plant disaster. Key themes addressed in upgrade possibilities include having a modular approach to additional radionuclide measurements, optimizing the sampling/analyzing times to improve detection location capabilities, and reducing power consumption by using electrostatic collection versus classic filtration collection. These individual efforts have been made in a modular context that might constitute retrofits to the existing RASA, modular components that could improve a manual monitoring approach, or a completely new RASA. Substantial optimization of the detection and location capabilities of an aerosol network is possible and new missions could be addressed by including additional measurements.

Multiplexing and scaling-down of nanostructured photon-triggered silicon field emitter arrays for maximum total electron yield.

Femtosecond ultrabright cathodes with spatially structured emission are a critical technology for applications such as free-electron lasers, tabletop coherent x-ray sources, and ultrafast imaging. In this work, the optimization of the total electron yield of ultrafast photon-triggered field emission cathodes composed of arrays of nanosharp, high-aspect-ratio, single-crystal silicon pillars is explored through the variation of the emitter pitch and height. Arrays of 6 nm tip radius silicon emitters with emitter densities between 1.2 and 73.9 million tips cm(-2) (hexagonally packed arrays with emitter pitch between 1.25 and 10 µm) and emitter height between 2.0 and 8.5 µm were characterized using 35 fs 800 nm laser pulses. Three-photon electron emission for low-energy (<0.3 µJ) light pulses and strong-field emission for high-energy (>1 µJ) light pulses was observed, in agreement with the literature. Of the devices tested, the arrays with emitter pitch equal to 2.5 µm produced the highest total electron yield; arrays with larger emitter pitch suffer area sub-utilization, and in devices with smaller emitter pitch the larger emitter density does not compensate the smaller per-emitter current due to the electric field shadowing that results from the proximity of the adjacent tips. Experimental data and simulations suggest that 2 µm tall emitters achieve practical optimal performance as shorter emitters have visibly smaller field factors due to the proximity of the emitter tip to the substrate, and taller emitters show marginal improvement in the electron yield at the expense of greater fabrication difficulty.

Nanostructured ultrafast silicon-tip optical field-emitter arrays.

Femtosecond ultrabright electron sources with spatially structured emission are an enabling technology for free-electron lasers, compact coherent X-ray sources, electron diffractive imaging, and attosecond science. In this work, we report the design, modeling, fabrication, and experimental characterization of a novel ultrafast optical field emission cathode comprised of a large (>100,000 tips), dense (4.6 million tips·cm(-2)), and highly uniform (<1 nm tip radius deviation) array of nanosharp high-aspect-ratio silicon columns. Such field emitters offer an attractive alternative to UV photocathodes while providing a direct means of structuring the emitted electron beam. Detailed measurements and simulations show pC electron bunches can be generated in the multiphoton and tunneling regime within a single optical cycle, enabling significant advances in electron diffractive imaging and coherent X-ray sources on a subfemtosecond time scale, not possible before. At high charge emission yields, a slow rollover in charge is explained as a combination of the onset of tunneling emission and the formation of a virtual cathode.

Near-ultraviolet zinc oxide nanowire sensor using low temperature hydrothermal growth.

Two near-ultraviolet (UV) sensors based on solution-grown zinc oxide (ZnO) nanowires (NWs) which are only sensitive to photo-excitation at or below 400 nm wavelength have been fabricated and characterized. Both devices keep all processing steps, including nanowire growth, under 100 °C for compatibility with a wide variety of substrates. The first device type uses a single optical lithography step process to allow simultaneous in situ horizontal NW growth from solution and creation of symmetric ohmic contacts to the nanowires. The second device type uses a two-mask optical lithography process to create asymmetric ohmic and Schottky contacts. For the symmetric ohmic contacts, at a voltage bias of 1 V across the device, we observed a 29-fold increase in current in comparison to dark current when the NWs were photo-excited by a 400 nm light-emitting diode (LED) at 0.15 mW cm(-2) with a relaxation time constant (τ) ranging from 50 to 555 s. For the asymmetric ohmic and Schottky contacts under 400 nm excitation, τ is measured between 0.5 and 1.4 s over varying time internals, which is ~2 orders of magnitude faster than the devices using symmetric ohmic contacts.