Proposal, design, and cost analysis of a hydrogen production process from cellulose via supercritical water gasification.

Hydrogen production from biomass, a renewable resource, has been attracting attention in recent years. We conduct a detailed process design for cellulose-derived hydrogen production via glucose using supercritical water gasification technology. Gasification of biomass in supercritical water offers advantages over conventional biomass conversion methods, including high gasification efficiency, elevated hydrogen molar fractions, and the minimization of drying process for wet biomass. In the process design, a continuous tank reactor is employed because the reaction in the glucose production process involves solids, and using a tube-type reactor may clog the reactor with solids. In the glucose separation process, glucose and levulinic acid, which cannot be separated by boiling point difference, are separated by using an extraction column. In the hydrogen separation process, the hydrogen purity, which could not be sufficiently increased with a single pressure swing adsorption (PSA) process, is increased to the target value by employing two sets of PSA columns. The overall utility cost is significantly reduced by $0.020/mol-H2 through heat integration. Our economic evaluation for this process results in a deficit of $0.015/mol-H2, as a price to be paid by the human for renewable hydrogen production from biomass at the present stage. By simply adopting the reported experimental condition, our process contains a large amount of water and sulfuric acid, which requires an enormous cost for the neutralizer, drying utility, and extractant. To improve the economic performance of the process, it is necessary to consider the reaction of cellulose solution at a higher concentration to reduce the burden of glucose separation. In addition, the effective use of the wasted hydrogen with a purity of about 95 vol% from the second PSA column may also improve the process economics. Whilst, the required energy cost for hydrogen production for our process is calculated to be significantly lower than those for other various representative hydrogen production methods: 0.37 (0.44) times less than that of steam reforming of methane with (without) CO2 capture, 0.15 times less than that of the water electrolysis by the electric power system, and 0.073 times less than that of electrolysis of water by wind power. This result implies the practical potential of our cellulose-based green hydrogen production scheme.

An all ambient, room temperature-processed solar cell from a bare silicon wafer.

Solar cells are a promising optoelectronic device for the simultaneous solution of energy resource and environmental problems. However, their high cost and slow, laborious production process so far severely hinder a sufficient widespread of clean, renewable photovoltaic energy as a major alternative electricity generator. This undesirable situation is mainly attributed to the fact that photovoltaic devices have been manufactured through a series of vacuum and high-temperature processes. Here we realize a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/Si heterojunction solar cell fabricated only in ambient and room temperature conditions from a plain Si wafer, with an over 10% energy conversion efficiency. Our production scheme is based on our finding that PEDOT:PSS photovoltaic layers actively operate even on highly doped Si substrates, which substantially mitigates the condition requirements for electrode implementation. Our approach may pave the way for facile, low-cost, high-throughput solar cell fabrication, useful in various fields even including developing countries and educational sites.

Nanostructured Materials for Solar Cell Applications.

The use of nanomaterials in technologies for photovoltaic applications continues to represent an important area of research [...].

Wavelength-Conversion-Material-Mediated Semiconductor Wafer Bonding for Smart Optoelectronic Interconnects.

A new concept of semiconductor wafer bonding, mediated by optical wavelength conversion materials, is proposed and demonstrated. The fabrication scheme provides simultaneous bond formation and interfacial function generation, leading to efficient device production. Wavelength-converting functionalized semiconductor interfacial engineering is realized by utilizing an adhesive viscous organic matrix with embedded fluorescent particles. The bonding is carried out in ambient air at room temperature and therefore provides a cost advantage with regard to device manufacturing. Distinct wavelength conversion, from ultraviolet into visible, and high mechanical stabilities and electrical conductivities in the bonded interfaces are verified, demonstrating their versatility for practical applications. This bonding and interfacial scheme can improve the performance and structural flexibility of optoelectronic devices, such as solar cells, by allowing the spectral light incidence suitable for each photovoltaic material, and photonic integrated circuits, by delivering the respective preferred frequencies to the optical amplifier, modulator, waveguide, and detector materials.

Lightning-Rod Effect of Plasmonic Field Enhancement on Hydrogen-Absorbing Transition Metals.

The plasmonic enhancement of electromagnetic field energy density at the sharp tips of nanoparticles or nanoscale surface roughnesses of hydrogen-absorbing transition metals, Pd, Ti, and Ni, is quantitatively investigated. A large degree of energy focusing is observed for these transition metals in the microwave region, even surpassing the enhancement for noble metals according to the conditions. Pd, for instance, exhibits peak field enhancement factors of 6000 and 2 × 108 in air for morphological aspect ratios of 10 and 100, respectively. Metal surfaces possibly contain such degrees of nano- or micro-scale native random roughnesses, and, therefore, the field enhancement effect may have been unknowingly produced in existing electrical and optical systems. In addition, for future devices under development, particularly in hydrogen-related applications, it is desirable to design and optimize the systems, including the choice of materials, structures, and operating conditions, by accounting for the plasmonic local energy enhancement effect around the metal surfaces.

Fabrication of Si/graphene/Si Double Heterostructures by Semiconductor Wafer Bonding towards Future Applications in Optoelectronics.

A Si/graphene/Si planar double heterostructure has been fabricated by means of semiconductor wafer bonding. The interfacial mechanical stability and interlayer electrical connection have been verified for the structure. To the best of our knowledge, this is the first realization of a monolayer-cored double heterostructure. In addition, a double heterostructure with bilayer graphene has been prepared for bandgap generation and tuning by application of a bias voltage. These structures move towards the realization of versatile graphene optoelectronics, such as an electrically pumped graphene laser. Our Si/graphene/Si double heterostructure is positioned to form a new basis for next-generation nanophotonic devices with high photon and carrier confinements, earth abundance (C, Si), environmental safety (C, Si), and excellent optical and electrical controllability by silicon clads.

Direct modulation of 1.3 µm quantum dot lasers on silicon at 60 °C.

We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry-Pérot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a cavity was formed using cleaved facets without HR/AR coatings. The bonded laser was operated under continuous-wave pumping at room temperature with a threshold current of 41 mA and a maximum output power of 30 mW (single facet). Even with such a simple device structure and fabrication process, our bonded laser is directly modulated using a 10 Gbps non-return-to-zero signal with an extinction ratio of 1.9 dB at room temperature. Furthermore, 6 Gbps modulation with an extinction ratio of 4.5 dB is achieved at temperatures up to 60 °C without any current or voltage adjustment. These results of device performances indicate an encouraging demonstration on III-V QD lasers on Si for the applications of the photonic integrated circuits.

Modeling of hydrogen/deuterium dynamics and heat generation on palladium nanoparticles for hydrogen storage and solid-state nuclear fusion.

We modeled the dynamics of hydrogen and deuterium adsorbed on palladium nanoparticles including the heat generation induced by the chemical adsorption and desorption, as well as palladium-catalyzed reactions. Our calculations based on the proposed model reproduce the experimental time-evolution of pressure and temperature with a single set of fitting parameters for hydrogen and deuterium injection. The model we generated with a highly generalized set of formulations can be applied for any combination of a gas species and a catalytic adsorbent/absorbent. Our model can be used as a basis for future research into hydrogen storage and solid-state nuclear fusion technologies.

A Simple Optical Model Well Explains Plasmonic-Nanoparticle-Enhanced Spectral Photocurrent in Optically Thin Solar Cells.

A simple optical model for photocurrent enhancement by plasmonic metal nanoparticles atop solar cells has been developed. Our model deals with the absorption, reflection, and scattering of incident sunlight as well as radiation efficiencies on metallic nanoparticles. Our calculation results satisfactorily reproduce a series of experimental spectral data for optically thin GaAs solar cells with Ag and Al nanoparticles of various dimensions, demonstrating the validity of our modeling approach. Our model is likely to be a powerful tool for investigations of surface plasmon-enhanced thin-film solar cells.

1.3 µm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces.

An InAs/GaAs quantum dot laser on a Si rib structure has been demonstrated. The double heterostructure laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This Fabry-Perot laser operates with current injection through the GaAs/Si rib interface and exhibits InAs quantum dot ground state lasing at 1.28 µm at room temperature, with a threshold current density of 480 A cm(-2).

III-V/Si hybrid photonic devices by direct fusion bonding.

Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost, light-weight photovoltaics. Here we present a GaAs/Si direct fusion bonding technique to provide highly conductive and transparent heterojunctions by heterointerfacial band engineering in relation to doping concentrations. Metal- and oxide-free GaAs/Si ohmic heterojunctions have been formed at 300°C; sufficiently low to inhibit active material degradation. We have demonstrated 1.3 µm InAs/GaAs quantum dot lasers on Si substrates with the lowest threshold current density of any laser on Si to date, and AlGaAs/Si dual-junction solar cells, by p-GaAs/p-Si and p-GaAs/n-Si bonding, respectively. Our direct semiconductor bonding technique opens up a new pathway for realizing ultrahigh efficiency multijunction solar cells with ideal bandgap combinations that are free from lattice-match restrictions required in conventional heteroepitaxy, as well as enabling the creation of novel high performance and practical optoelectronic devices by III-V/Si hybrid integration.

High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity.

We report a high-Q design for a semiconductor-based two-dimensional zero-cell photonic crystal (PhC) nanocavity with a small mode volume. The optimization of displacements of hexagonal-lattice air holes in the Gamma-M direction, in addition to the Gamma-K direction, resulted in a cavity quality factor Q of 2.8 x 10(5) sustaining the small modal volume of 0.23(lambda(0)/n)(3). The momentum space consideration of out-of-plane radiation loss showed that the optimization of air hole displacements in both the in-plane x and y directions reduced FT components in the leaky region along the k(x) and k(y) axes, respectively. This high-Q cavity design is applicable to Si and GaAs semiconductor materials.

Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).

Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.

Room temperature, continuous-wave lasing in a quantum dot photonic crystal nanocavity on a Si substrate has been demonstrated by optical pumping. The laser was an air-bridge structure of a two-dimensional photonic crystal GaAs slab with InAs quantum dots inside on a Si substrate fabricated through wafer bonding and layer transfer. This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon.