Multi-Task Foreground-Aware Network with Depth Completion for Enhanced RGB-D Fusion Object Detection Based on Transformer.

Fusing multiple sensor perceptions, specifically LiDAR and camera, is a prevalent method for target recognition in autonomous driving systems. Traditional object detection algorithms are limited by the sparse nature of LiDAR point clouds, resulting in poor fusion performance, especially for detecting small and distant targets. In this paper, a multi-task parallel neural network based on the Transformer is constructed to simultaneously perform depth completion and object detection. The loss functions are redesigned to reduce environmental noise in depth completion, and a new fusion module is designed to enhance the network's perception of the foreground and background. The network leverages the correlation between RGB pixels for depth completion, completing the LiDAR point cloud and addressing the mismatch between sparse LiDAR features and dense pixel features. Subsequently, we extract depth map features and effectively fuse them with RGB features, fully utilizing the depth feature differences between foreground and background to enhance object detection performance, especially for challenging targets. Compared to the baseline network, improvements of 4.78%, 8.93%, and 15.54% are achieved in the difficult indicators for cars, pedestrians, and cyclists, respectively. Experimental results also demonstrate that the network achieves a speed of 38 fps, validating the efficiency and feasibility of the proposed method.

Evidence of frustrated magnetic interactions in a Wigner-Mott insulator.

Electrons in two-dimensional semiconductor moiré materials are more delocalized around the lattice sites than those in conventional solids1,2. The non-local contributions to the magnetic interactions can therefore be as important as the Anderson superexchange3, which makes the materials a unique platform to study the effects of competing magnetic interactions3,4. Here we report evidence of strongly frustrated magnetic interactions in a Wigner-Mott insulator at a two-thirds (2/3) filling of the moiré lattice in angle-aligned WSe2/WS2 bilayers. Magneto-optical measurements show that the net exchange interaction is antiferromagnetic for filling factors below 1 with a strong suppression at a 2/3 filling. The suppression is lifted on screening of the long-range Coulomb interactions and melting of the Wigner-Mott insulators by a nearby metallic gate. The results can be qualitatively captured by a honeycomb-lattice spin model with an antiferromagnetic nearest-neighbour coupling and a ferromagnetic second-neighbour coupling. Our study establishes semiconductor moiré materials as a model system for lattice-spin physics and frustrated magnetism5.

Dielectric catastrophe at the Wigner-Mott transition in a moiré superlattice.

The bandwidth-tuned Wigner-Mott transition is an interaction-driven phase transition from a generalized Wigner crystal to a Fermi liquid. Because the transition is generally accompanied by both magnetic and charge-order instabilities, it remains unclear if a continuous Wigner-Mott transition exists. Here, we demonstrate bandwidth-tuned metal-insulator transitions at fixed fractional fillings of a MoSe2/WS2 moiré superlattice. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe2 sensor layer. The exciton spectral weight is negligible for the metallic state with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a 'dielectric catastrophe' driven by the critical charge dynamics near the transition. Our results support the scenario of continuous Wigner-Mott transitions in two-dimensional triangular lattices and stimulate future explorations of exotic quantum phases in their vicinities.

Strong interlayer interactions in bilayer and trilayer moiré superlattices.

Moiré superlattices constructed from transition metal dichalcogenides have demonstrated a series of emergent phenomena, including moiré excitons, flat bands, and correlated insulating states. All of these phenomena depend crucially on the presence of strong moiré potentials, yet the properties of these moiré potentials, and the mechanisms by which they can be generated, remain largely open questions. Here, we use angle-resolved photoemission spectroscopy with submicron spatial resolution to investigate an aligned WS2/WSe2 moiré superlattice and graphene/WS2/WSe2 trilayer heterostructure. Our experiments reveal that the hybridization between moiré bands in WS2/WSe2 exhibits an unusually large momentum dependence, with the splitting between moiré bands at the Γ point more than an order of magnitude larger than that at K point. In addition, we discover that the same WS2/WSe2 superlattice can imprint an unexpectedly large moiré potential on a third, separate layer of graphene (g/WS2/WSe2), suggesting new avenues for engineering two-dimensional moiré superlattices.

Charge-order-enhanced capacitance in semiconductor moiré superlattices.

Van der Waals moiré materials have emerged as a highly controllable platform to study electronic correlation phenomena1-17. Robust correlated insulating states have recently been discovered at both integer and fractional filling factors of semiconductor moiré systems10-17. In this study we explored the thermodynamic properties of these states by measuring the gate capacitance of MoSe2/WS2 moiré superlattices. We observed a series of incompressible states for filling factors 0-8 and anomalously large capacitance in the intervening compressible regions. The anomalously large capacitance, which was nearly 60% above the device's geometrical capacitance, was most pronounced at small filling factors, below the melting temperature of the charge-ordered states, and for small sample-gate separation. It is a manifestation of the device-geometry-dependent Coulomb interaction between electrons and phase mixing of the charge-ordered states. Based on these results, we were able to extract the thermodynamic gap of the correlated insulating states and the device's electronic entropy and specific heat capacity. Our findings establish capacitance as a powerful probe of the correlated states in semiconductor moiré systems and demonstrate control of these states via sample-gate coupling.

Stripe phases in WSe2/WS2 moiré superlattices.

Stripe phases, in which the rotational symmetry of charge density is spontaneously broken, occur in many strongly correlated systems with competing interactions1-11. However, identifying and studying such stripe phases remains challenging. Here we uncover stripe phases in WSe2/WS2 moiré superlattices by combining optical anisotropy and electronic compressibility measurements. We find strong electronic anisotropy over a large doping range peaked at 1/2 filling of the moiré superlattice. The 1/2 state is incompressible and assigned to an insulating stripe crystal phase. Wide-field imaging reveals domain configurations with a preferential alignment along the high-symmetry axes of the moiré superlattice. Away from 1/2 filling, we observe additional stripe crystals at commensurate filling 1/4, 2/5 and 3/5, and compressible electronic liquid crystal states at incommensurate fillings. Our results demonstrate that two-dimensional semiconductor moiré superlattices are a highly tunable platform from which to study the stripe phases and their interplay with other symmetry breaking ground states.

Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening.

Moiré superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moiré bands in a crystal through interlayer electronic hybridization or atomic corrugation when two materials are overlaid. Here we demonstrate a new approach based on spatially periodic dielectric screening to create moiré bands in a monolayer semiconductor. This approach relies on reduced dielectric screening of the Coulomb interactions in monolayer semiconductors and their environmental dielectric-dependent electronic band structure. We observe optical transitions between moiré bands in monolayer WSe2 when it is placed close to small-angle-misaligned graphene on hexagonal boron nitride. The moiré bands are a result of long-range Coulomb interactions, which are strongly gate tunable, and can have versatile superlattice symmetries independent of the crystal lattice of the host material. Our result also demonstrates that monolayer semiconductors are sensitive local dielectric sensors.

Tuning layer-hybridized moiré excitons by the quantum-confined Stark effect.

Moiré superlattices offer an unprecedented opportunity for tailoring interactions between quantum particles1-11 and their coupling to electromagnetic fields12-18. Strong superlattice potentials generate moiré minibands of excitons16-18-bound pairs of electrons and holes that reside either in a single layer (intralayer excitons) or in two separate layers (interlayer excitons). Twist-angle-controlled interlayer electronic hybridization can also mix these two types of exciton to combine their strengths13,19,20. Here we report the direct observation of layer-hybridized moiré excitons in angle-aligned WSe2/WS2 and MoSe2/WS2 superlattices by optical reflectance spectroscopy. These excitons manifest a hallmark signature of strong coupling in WSe2/WS2, that is, energy-level anticrossing and oscillator strength redistribution under a vertical electric field. They also exhibit doping-dependent renormalization and hybridization that are sensitive to the electronic correlation effects. Our findings have important implications for emerging many-body states in two-dimensional semiconductors, such as exciton condensates21 and Bose-Hubbard models22, and optoelectronic applications of these materials.

Simulation of Hubbard model physics in WSe2/WS2 moiré superlattices.

The Hubbard model, formulated by physicist John Hubbard in the 1960s1, is a simple theoretical model of interacting quantum particles in a lattice. The model is thought to capture the essential physics of high-temperature superconductors, magnetic insulators and other complex quantum many-body ground states2,3. Although the Hubbard model provides a greatly simplified representation of most real materials, it is nevertheless difficult to solve accurately except in the one-dimensional case2,3. Therefore, the physical realization of the Hubbard model in two or three dimensions, which can act as an analogue quantum simulator (that is, it can mimic the model and simulate its phase diagram and dynamics4,5), has a vital role in solving the strong-correlation puzzle, namely, revealing the physics of a large number of strongly interacting quantum particles. Here we obtain the phase diagram of the two-dimensional triangular-lattice Hubbard model by studying angle-aligned WSe2/WS2 bilayers, which form moiré superlattices6 because of the difference between the lattice constants of the two materials. We probe the charge and magnetic properties of the system by measuring the dependence of its optical response on an out-of-plane magnetic field and on the gate-tuned carrier density. At half-filling of the first hole moiré superlattice band, we observe a Mott insulating state with antiferromagnetic Curie-Weiss behaviour, as expected for a Hubbard model in the strong-interaction regime2,3,7-9. Above half-filling, our experiment suggests a possible quantum phase transition from an antiferromagnetic to a weak ferromagnetic state at filling factors near 0.6. Our results establish a new solid-state platform based on moiré superlattices that can be used to simulate problems in strong-correlation physics that are described by triangular-lattice Hubbard models.

Ultrafast hole extraction from photoexcited colloidal CdSe quantum dots coupled to nitroxide free radicals.

Organic free radicals related to the 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO) radical are known as photoluminescence-quenchers when coupled to group II-chalcogenide colloidal quantum dots (QDs), but the mechanism responsible for this phenomenon has so far remained unresolved. Using a combination of time-resolved photoluminescence and transient absorption spectroscopies, we demonstrate that photoexcited colloidal CdSe QDs coupled to 4-amino-TEMPO undergo highly efficient reductive quenching, that is, hole transfer from the valence band of the quantum dot to the organic paramagnetic species. Interestingly, the process is shown to occur on a subpicosecond time scale for bound 4AT; such a large rate constant for the extraction of holes from photoexcited CdSe QD by a molecular species is rare and underlines the potential that TEMPO derivatives can play in mediating efficient redox processes involving colloidal CdSe QDs.

Long valley lifetime of dark excitons in single-layer WSe2.

Single-layer transition metal dichalcogenides provide a promising material system to explore the electron's valley degree of freedom as a quantum information carrier. The valley degree of freedom can be directly accessed by means of optical excitation. However, rapid valley relaxation of optically excited electron-hole pairs (excitons) through the exchange interaction has been a major roadblock. Theoretically such valley relaxation is suppressed in dark excitons, suggesting a potential route for long valley lifetimes. Here we develop a waveguide-based method to detect time-resolved and energy-resolved dark exciton emission in single-layer WSe2, which involves spin-forbidden optical transitions with an out-of-plane dipole moment. The valley degree of freedom of dark excitons is accessed through the valley-dependent Zeeman effect under an out-of-plane magnetic field. We find a short valley lifetime for the dark neutral exciton, likely due to the short-range electron-hole exchange, but long valley lifetimes exceeding several nanoseconds for the dark charged excitons.