Determination of aberration center of Ronchigram for automated aberration correctors in scanning transmission electron microscopy.

A generic method to determine the aberration center is established, which can be utilized for aberration calculation and axis alignment for aberration corrected electron microscopes. In this method, decentering induced secondary aberrations from inherent primary aberrations are minimized to find the appropriate axis center. The fitness function to find the optimal decentering vector for the axis was defined as a sum of decentering induced secondary aberrations with properly distributed weight values according to the aberration order. Since the appropriate decentering vector is determined from the aberration values calculated at an arbitrary center axis, only one aberration measurement is in principle required to find the center, resulting in /very fast center search. This approach was tested for the Ronchigram based aberration calculation method for aberration corrected scanning transmission electron microscopy. Both in simulation and in experiments, the center search was confirmed to work well although the convergence to find the best axis becomes slower with larger primary aberrations. Such aberration center determination is expected to fully automatize the aberration correction procedures, which used to require pre-alignment of experienced users. This approach is also applicable to automated aperture positioning.

Element discrimination in a hexagonal boron nitride nanosheet by aberration corrected transmission electron microscopy.

Boron nitride nanosheets prepared by an exfoliation technique were observed by aberration corrected transmission electron microscopy at 300 kV acceleration voltage. Single boron and nitrogen atoms in a monolayer region were imaged with different image contrast; a boron atom gave 16% less intensity reduction than a nitrogen atom. The number of atoms at each hexagonal ring site was determined by the image intensity that changed discretely with a 0.25-0.30 intensity difference. A double BN sheet was found to have a boron vacancy layer, and a triple BN layer has also a boron deficient layer on the incident surface resulting from the electron beam thinning process. The high sensitivity for atomic species was achieved by the high resolution and a small information limit due to the use of a cold field emission electron source.

Study on probe current dependence of the intensity distribution in annular dark field images.

The intensity profile of atomic columns in annular dark field (ADF) images was quantitatively investigated for a silicon (001) crystal using a cold field emission source in an aberration corrected scanning transmission electron microscope. The intensity distribution at the atomic column in the annular dark field image was blurred by increasing the probe current from 10 to 40 pA, which was quantitatively well fit by a simulated distribution convolved by Gaussian envelopes with area proportional to the probe current. The blur of the ADF images was primarily determined by the size of the cold field emission source.

Quantitative annular dark-field STEM images of a silicon crystal using a large-angle convergent electron probe with a 300-kV cold field-emission gun.

Annular dark-field scanning transmission electron microscope (ADF-STEM) images of an Si (001) crystal were obtained by using an aberration-corrected electron microscope, at 30-mrad convergent probe and cold field-emission gun at 300 kV. The intensity of ADF-STEM images, that is, the number of scattered electrons relative to the incident electrons, obtained for specimen thickness from 10 to 50 nm was compared quantitatively with  absorptive multi-slice simulation. The column and background intensities were analyzed by column-by-column two-dimensional Gaussian fitting. These intensities were found to increase linearly with the sample thicknesses. However, the simulated image gave higher column intensity and lower background intensity for all the sample thickness. We found that experimental images were reproduced by the simulation with Gaussian convolution of 70 pm full-width at half-maximum for all the sample thicknesses from 10 to 50 nm. The possible factors accounted for this Gaussian convolution is discussed.

Direct imaging of lithium atoms in LiV2O4 by spherical aberration-corrected electron microscopy.

We visualized lithium atom columns in LiV2O4 crystals by combining scanning transmission electron microscopy with annular bright field (ABF) imaging using a spherical aberration-corrected electron microscope (R005) viewed from the [110] direction. The incident electron beam was coherent with a convergent angle of 30 mrad (semi-angle), and the detector collected scattered electrons over 20-30 mrad (semi-angle). The ABF image showed dark dots corresponding to lithium, vanadium and oxygen columns.

STEM imaging of 47-pm-separated atomic columns by a spherical aberration-corrected electron microscope with a 300-kV cold field emission gun.

A spherical aberration-corrected electron microscope has been developed recently, which is equipped with a 300-kV cold field emission gun and an objective lens of a small chromatic aberration coefficient. A dumbbell image of 47 pm spacing, corresponding to a pair of atomic columns of germanium aligned along the [114] direction, is resolved in high-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) with a 0.4-eV energy spread of the electron beam. The observed image was compared with a simulated image obtained by dynamical calculation.