Structure Formation and Coupling Reactions of Hexaphenylbenzene and Its Brominated Analog.

The on-surface coupling of the prototypical precursor molecule for graphene nanoribbon synthesis, 6,11-dibromo-1,2,3,4-tetraphenyltriphenylene (C42 Br2 H26 , TPTP), and its non-brominated analog hexaphenylbenzene (C42 H30 , HPB), was investigated on coinage metal substrates as a function of thermal treatment. For HPB, which forms non-covalent 2D monolayers at room temperature, a thermally induced transition of the monolayer's structure could be achieved by moderate annealing, which is likely driven by π-bond formation. It is found that the dibrominated carbon positions of TPTP do not guide the coupling if the growth occurs on a substrate at temperatures that are sufficient to initiate C-H bond activation. Instead, similar one-dimensional molecular structures are obtained for both types of precursors, HPB and TPTP.

On-Surface Synthesis and Spectroscopic Characterization of Laterally Extended Chevron Graphene Nanoribbons.

We report the on-surface synthesis and spectroscopic study of laterally extended chevron graphene nanoribbons (GNRs) and compare them with the established chevron GNRs, emphasizing the consistency of bandgap reduction of semiconducting GNRs with increased width. The laterally extended chevron GNRs grown on Au(111) exhibit a bandgap of about 2.2 eV, which is considerably smaller than the values reported for chevron GNRs in similar studies.

Inkjet Printing All Inorganic Halide Perovskite Inks for Photovoltaic Applications.

A method for synthesizing photoactive inorganic perovskite quantum dot inks and an inkjet printer deposition method, using the synthesized inks, are demonstrated. The ink synthesis is based on a simple wet chemical reaction and the inkjet printing protocol is a facile step by step method. The inkjet printed thin films have been characterized by X-ray diffraction, optical absorption spectroscopy, photoluminescent spectroscopy, and electronic transport measurements. X-ray diffraction of the printed quantum dot films indicates a crystal structure consistent with an orthorhombic room temperature phase with (001) orientation. In conjunction with other characterization methods, the X-ray diffraction measurements show high quality films can be obtained through the inkjet printing method.

Dense monolayer films of atomically precise graphene nanoribbons on metallic substrates enabled by direct contact transfer of molecular precursors.

Atomically precise graphene nanoribbons (GNRs) of two types, chevron GNRs and N = 7 straight armchair GNRs (7-AGNRs), have been synthesized through a direct contact transfer (DCT) of molecular precursors on Au(111) and gradual annealing. This method provides an alternative to the conventional approach for the deposition of molecules on surfaces by sublimation and simplifies preparation of dense monolayer films of GNRs. The DCT method allows deposition of molecules on a surface in their original state and then studying their gradual transformation to polymers to GNRs by scanning tunneling microscopy (STM) upon annealing. We performed STM characterization of the precursors of chevron GNRs and 7-AGNRs, and demonstrate that the assemblies of the intermediates of the GNR synthesis are stabilized by π-π interactions. This conclusion was supported by the density functional theory calculations. The resulting monolayer films of GNRs have sufficient coverage and density of nanoribbons for ex situ characterization by spectroscopic methods, such as Raman spectroscopy, and may prove useful for the future GNR device studies.

Epitaxial growth of aligned atomically precise chevron graphene nanoribbons on Cu(111).

Atomically precise chevron graphene nanoribbons (GNRs) have been synthesized on Cu(111) substrates by the surface-assisted coupling of 6,11-dibromo-1,2,3,4-tetraphenyltriphenylene (C42Br2H26) and thermal cyclodehydrogenation of the resulting polymer. The GNRs form on Cu(111) epitaxially along the 〈112〉 crystallographic directions, which was found to be in agreement with the computational results, and at lower temperatures than on Au(111). This work demonstrates that the substrate plays an important role in the on-surface synthesis of GNRs and can result in new assembly modes of GNR structures.

Few-layered titanium trisulfide (TiS3) field-effect transistors.

Titanium trisulfide (TiS3) is a promising layered semiconductor material. Several-mm-long TiS3 whiskers can be conveniently grown by the direct reaction of titanium and sulfur. In this study, we exfoliated these whiskers using the adhesive tape approach and fabricated few-layered TiS3 field-effect transistors (FETs). The TiS3 FETs showed an n-type electronic transport with room-temperature field-effect mobilities of 18-24 cm(2) V(-1) s(-1) and ON/OFF ratios up to 300. We demonstrate that TiS3 is compatible with the conventional atomic layer deposition (ALD) procedure for Al2O3. ALD of alumina on TiS3 FETs resulted in mobility increase up to 43 cm(2) V(-1) s(-1), ON/OFF ratios up to 7000, and much improved subthreshold swing characteristics. This study shows that TiS3 is a competitive electronic material in the family of two-dimensional (2D) transition metal chalcogenides and can be considered for emerging device applications.