Combined antenna and localized plasmon resonance in Raman scattering from random arrays of silver-coated, vertically aligned multiwalled carbon nanotubes.

The electric field enhancement associated with detailed structure within novel optical antenna nanostructures is modeled using the surface integral equation technique in the context of surface-enhanced Raman scattering (SERS). The antennae comprise random arrays of vertically aligned, multiwalled carbon nanotubes dressed with highly granular Ag. Different types of "hot-spot" underpinning the SERS are identified, but contrasting characteristics are revealed. Those at the outer edges of the Ag grains are antenna driven with field enhancement amplified in antenna antinodes while intergrain hotspots are largely independent of antenna activity. Hot-spots between the tops of antennae leaning towards each other also appear to benefit from antenna amplification.

Carbon nanotubes integrated in electrically insulated channels for lab-on-a-chip applications.

A fabrication process for monolithic integration of vertically aligned carbon nanotubes in electrically insulated microfluidic channels is presented. A 150 nm thick amorphous silicon layer could be used both for anodic bonding of a glass lid to hermetically seal the microfluidic glass channels and for de-charging of the wafer during plasma enhanced chemical vapor deposition of the carbon nanotubes. The possibility of operating the device with electroosmotic flow was shown by performing standard electrophoretic separations of 50 microM fluorescein and 50 microM 5-carboxyfluorescein in a 25 mm long column containing vertical aligned carbon nanotubes. This is the first demonstration of electroosmotic pumping and electrokinetic separations in microfluidic channels with a monolithically integrated carbon nanotube forest.

On-chip deposition of carbon nanotubes using CMOS microhotplates.

The direct deposition of carbon nanotubes on CMOS microhotplates is demonstrated in this paper. Tungsten microhotplates, fabricated on thin SOI membranes aside CMOS control circuitry, are used to locally grow carbon nanotubes by chemical vapour deposition. Unlike bulk heating of the entire chip, which could cause degradation to CMOS devices and interconnects due to high growth temperatures in excess of 500 °C, this novel technique allows carbon nanotubes to be grown on-chip in localized regions. The microfabricated heaters are thermally isolated from the rest of the CMOS chip as they are on the membranes. This allows carbon nanotubes to be grown alongside CMOS circuitry on the same wafer without any external heating, thus enabling new applications (e.g. smart gas sensing) where the integration of CMOS and carbon nanotubes is required.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Growth of carbon nanotubes on Si substrate using Fe catalyst produced by pulsed laser deposition.

We report the growth of carbon nanotubes on the size controlled iron catalytic nanoparticles. The nanotubes were grown by thermal chemical vapour deposition (CVD) in the temperature range 600-850 degrees C. The Fe films were deposited on silicon by pulsed laser deposition in vacuum. Atomic force microscopy measurements were performed on the catalytic nanoparticles. The topography of the catalytic nanoparticles shows the homogenous distribution of Fe catalyst. We observe the nanotubes are produced only at temperatures between 650 and 800 degrees C, and within this narrow temperature regime the yield of nanotubes reaches a maximum around 750 degrees C and then declines. Raman measurements illustrate a high G/D peak ratio indicating good nanotube quality. By further defining the size of the catalyst the diameter of these carbon nanotubes can be controlled.

Carbon onions: carriers of the 217.5 nm interstellar absorption feature.

Ultraviolet-visible absorption measurements of high purity and well separated carbon onion samples are reported. The results show that, after purification, absorption features from carbon onions match well with the interstellar UV spectrum. The measurements show that the absorption peak position remains constant at 4.55+/-0.1 microm(-1), and the width varies from 1.2-1.6 microm(-1), a key feature of the interstellar spectrum. The similarities between the experimental and observed absorption spectra indicate that carbon onions are very strong candidates for the origin of the UV interstellar absorption peak at 4.6 microm(-1).