Controlling the Anionic Ratio and Gradient in Kesterite Technology.

Accurate anionic control during the formation of chalcogenide solid solutions is fundamental for tuning the physicochemical properties of this class of materials. Compositional grading is the key aspect of band gap engineering and is especially valuable at the device interfaces for an optimum band alignment, for controlling interface defects and recombination and for optimizing the formation of carrier-selective contacts. However, a simple and reliable technique that allows standardizing anionic compositional profiles is currently missing for kesterites and the feasibility of achieving a compositional gradient remains a challenging task. This work aims at addressing these issues by a simple and innovative technique. It basically consists of first preparing a pure sulfide absorber with a specific thickness followed by the synthesis of a pure selenide part of complementary thickness on top of it. Specifically, the technique is applied to the synthesis of Cu2ZnSn(S,Se)4 and Cu2ZnGe(S,Se)4 kesterite absorbers, and a series of characterizations are performed to understand the anionic redistribution within the absorbers. For identical processing conditions, different Se incorporation dynamics is identified for Sn- and Ge-based kesterites, leading to a homogeneous or graded composition in depth. It is first demonstrated that for Sn-based kesterite the anionic composition can be perfectly controlled through the thicknesses ratio of the sulfide and selenide absorber parts. Then, it is demonstrated that for Ge-based kesterite an anionic (Se-S) gradient is obtained and that by adjusting the processing conditions the composition at the back side can be finely tuned. This technique represents an innovative approach that will help to improve the compositional reproducibility and determine a band gap grading strategy pathway for kesterites. Furthermore, due to its simplicity and reliability, the proposed methodology could be extended to other chalcogenide materials.

Layered Quaternary Compounds in the Cu2S-In2S3-Ga2S3 system.

Several new materials with four structure-types (e.g., Cu0.32In1.74Ga0.84S4 (CIGS4), Cu0.65In1.75Ga1.4S5 (CIGS5), Cu1.44In2.77Ga0.76S6 (CIGS6), and Cu1.1In2.49Ga1.8S7 (CIGS7)) have been evidenced in the Cu2S-In2S3-Ga2S3 pseudo-ternary system. All of them present a 2D structure built upon infinite 2/∞[InS2] layers ((InS6) octahedra sharing edges) on which condense on both sides mono-, bi-, or tri-2/∞[MS] layers ((MS4) tetrahedra (M = Cu, In, Ga) sharing corners). (M(Td))n-2(In(Oh))Sn slabs are separated from each other by a van der Waals gap, and subscript n refers to the number of sulfur layers within the building block. These compounds have the propensity to display stacking faults but also polymorphic forms. Their optical gap (ca. 1.7 eV) is quite similar to the one of the Cu(In0.7Ga0.3)S2 chalcopyrite absorbers used in tandem solar cells, and the major charge carriers are holes. This suggests that they might be very attractive for photovoltaic applications in thin film devices but also for photocatalysis.

Influence of a Boron Precursor on the Growth and Optoelectronic Properties of Electrodeposited Zinc Oxide Thin Film.

Highly transparent and conductive materials are required for many industrial applications. One of the interesting features of ZnO is the possibility to dope it using different elements, hence improving its conductivity. Results concerning the zinc oxide thin films electrodeposited in a zinc perchlorate medium containing a boron precursor are presented in this study. The addition of boron to the electrolyte leads to significant effects on the morphology and crystalline structure as well as an evolution of the optical properties of the material. Varying the concentration of boric acid from 0 to 15 mM strongly improves the compactness of the deposit and increases the band gap from 3.33 to 3.45 eV. Investigations were also conducted to estimate and determine the influence of boric acid on the electrical properties of the ZnO layers. As a result, no doping effect effect by boron was demonstrated. However, the role of boric acid on the material quality has also been proven and discussed. Boric acid strongly contributes to the growth of high quality electrodeposited zinc oxide. The high doping level of the film can be attributed to the perchlorate ions introduced in the bath. Finally, a ZnO layer electrodeposited in a boron rich electrolyte was tested as front contact of a Cu(In, Ga)(S, Se)2 based solar cell. An efficiency of 12.5% was measured with a quite high fill factor (>70%) which confirms the high conductivity of the ZnO thin film.