Ag6Cl4: the first silver chloride with rare Ag6 clusters from an ab initio study.

The first diamagnetic semiconducting silver subhalide, Ag6Cl4, featuring rare subvalent Ag6 clusters with 2e--6c bonds, 1D argentophilic d10-d10 intercluster interactions and 3D ionic connectivity ensured by Cl atoms has been predicted employing Density Functional Theory. Ag6Cl4 carries all unique features of Ag+ so far observed only in selected metal-rich oxides and as such represents an important addition to the discussion of the special bonding properties of silver with a filled d10-shell. Having appreciable formation enthalpy and dynamical stability, Ag6Cl4 should be in principle possible to synthesize as a metastable phase relative to AgCl.

Gigantic work function in layered AgF2.

AgF2 is a layered material and a correlated charge transfer insulator with an electronic structure very similar to the parent compounds of cuprate high-TC superconductors. It is also interesting as it is a powerful oxidizer. Here we present a first principles computation of its electronic properties in a slab geometry including its work function for the (010) surface (7.76 eV) which appears to be the highest among known materials with non-dipolar surfaces, and surpassing even that of fluorinated diamond (7.24 eV). We demonstrate that AgF2 will show a "broken-gap" type alignment becoming electron doped and promoting injection of holes in many wide band gap insulators if chemical reaction can be avoided. Novel junction devices involving p type and n type superconductors have been proposed. The issue of chemical reaction is discussed in connection with the possibility to create flat AgF2 monolayers achieving high-TC superconductivity. As a first step in this direction, we studied the stability and properties of an isolated AgF2 monolayer.

Reorientation of π-conjugated molecules on few-layer MoS2 films.

Small π-conjugated organic molecules have attracted substantial attention in the past decade as they are considered as candidates for future organic-based (opto-)electronic applications. The molecular arrangement in the organic layer is one of the crucial parameters that determine the efficiency of a given device. The desired orientation of the molecules is achieved by a proper choice of the underlying substrate and growth conditions. Typically, one underlying material supports only one inherent molecular orientation at its interface. Here, we report on two different orientations of diindenoperylene (DIP) molecules on the same underlayer, i.e. on a few-layer MoS2 substrate. We show that DIP molecules adopt a lying-down orientation when deposited on few-layer MoS2 with horizontally oriented layers. In contrast, for vertically aligned MoS2 layers, DIP molecules are arranged in a standing-up manner. Employing in situ and real-time grazing-incidence wide-angle X-ray scattering (GIWAXS), we monitored the stress evolution within the thin DIP layer from the early stages of the growth, revealing different substrate-induced phases for the two molecular orientations. Our study opens up new possibilities for the next-generation of flexible electronics, which might benefit from the combination of MoS2 layers with unique optical and electronic properties and an extensive reservoir of small organic molecules.

Silver route to cuprate analogs.

The parent compound of high-[Formula: see text] superconducting cuprates is a unique Mott insulator consisting of layers of spin-[Formula: see text] ions forming a square lattice and with a record high in-plane antiferromagnetic coupling. Compounds with similar characteristics have long been searched for without success. Here, we use a combination of experimental and theoretical tools to show that commercial [Formula: see text] is an excellent cuprate analog with remarkably similar electronic parameters to [Formula: see text] but larger buckling of planes. Two-magnon Raman scattering and inelastic neutron scattering reveal a superexchange constant reaching 70% of that of a typical cuprate. We argue that structures that reduce or eliminate the buckling of the [Formula: see text] planes could have an antiferromagnetic coupling that matches or surpasses the cuprates.

Raman Activity of Multilayer Phosphorene under Strain.

Using computational tools, we study the behavior of activities of lattice vibrational Raman modes in few-layered phosphorene of up to four layers subjected to a uniaxial strain of -2 to +6% applied in the armchair and zigzag directions. We study both high- and low-frequency modes and find very appreciable frequency shifts in response to the applied strain of up to ≈20 cm-1. The Raman activities are characterized by Ag 2/Ag 1 activity ratios, which provide very meaningful characteristics of functionalization via layer- and strain-engineering. The ratios exhibit a pronounced vibrational anisotropy, namely a linear increase with the applied armchair strain and a highly nonlinear behavior with a strong drop of the ratio with the strain applied along the zigzag direction. For the low-frequency modes, which are Raman active exclusively in few-layered systems, we find the breathing interlayer modes of primary importance due to their strong activities. For few-layered structures with a thickness ≥4, a splitting of the breathing modes into a pair of modes with complementary activities is found, with the lower frequency mode being strain activated. Our calculated database of results contains full angular information on activities of both low- and high-frequency Raman modes. These results, free of experimental complexities, such as dielectric embedding, defects, and size and orientation of the flakes, provide a convenient benchmark for experiments. Combined with high-spatial-resolution Raman scattering experiments, our calculated results will aid in the understanding of the complicated inhomogeneous strain distributions in few-layered phosphorene or the manufacture of materials with desired electronic properties via strain- or layer-engineering.

CVD formation of graphene on SiC surface in argon atmosphere.

We investigate the microscopic processes leading to graphene growth by the chemical vapor deposition of propane in an argon atmosphere at the SiC surface. Experimentally, it is known that the presence of argon fastens the dehydrogenation processes at the surface, at high temperatures of about 2000 K. We perform ab initio calculations, at zero temperature, to check whether chemical reactions can explain this phenomenon. Density functional theory and supporting quantum chemistry methods qualitatively describe formation of the graphene wafers. We find that the 4H-SiC(0001) surface exhibits a large catalytic effect in the adsorption process of hydrocarbon molecules, this is also supported by preliminary molecular dynamics results. The existence of the ArH(+) molecule, and an observation from the Raman spectra that the negative charge transfers into the SiC surface, would suggest that presence of argon atoms leads to a deprotonization on the surface, which is necessary to obtain a pure carbon adlayer. But the zero-temperature description shows that the cold environment is insufficient to promote argon-assisted surface cleaning.

Comparative ab initio study of lattice dynamics and thermodynamics of Fe2SiO4- and Mg2SiO4-spinels.

Lattice dynamics and thermodynamic properties of antiferromagnetic Fe(2)SiO(4)-spinel have been studied using density functional theory. Phonon dispersions are obtained for several hydrostatic pressures up to 20 GPa. They are used to calculate thermodynamic properties within the quasiharmonic approximation. Comparison with ab initio results obtained for Mg(2)SiO(4)-spinel is made in order to study the effect of the cation exchange on the dynamic and thermodynamic properties of (Mg, Fe)(2)SiO(4)-spinel. The obtained results have been compared with the available experimental data.