RESUMO
We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er(3+) and Yb(3+) codoped YAl(3)(BO(3))(4) laser operating in the 1.5-1.6 microm spectral region. Low-loss GaInNAs quantum-well semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps.
RESUMO
The growth, spectroscopic properties, and laser performance of Yb:YVO4 crystal with laser diode pumping are reported. A peak absorption cross section of 7.4 x 10(-20) cm2 at 985 nm, a radiative lifetime of 0.25 ms, and a stimulated-emission cross section of 1.25 x 10(-20) cm2 at 1008 nm for pi polarization were determined for the Yb3+ ions in YVO4. Continuous-wave laser action of Yb:YVO4 at 1020-1027 nm was demonstrated with an output power of 610 mW and a slope efficiency of 49%.