1.
Opt Lett
; 49(4): 1073-1076, 2024 Feb 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-38359256
RESUMO
We report on the third harmonic generation (THG) in InSb semiconductor irradiated by a terahertz (THz) free electron laser (FEL). The conversion of 4â THz (wavelength 70â µm) FEL outputs into its third harmonic 12â THz was observed. We found that by tuning the sample temperature to 360â K, high conversion efficiency up to 1% can be obtained and is the highest in the THz and FIR regions below 10â THz. We also discuss the observed intensity dependence of the THG with the nonlinear order lower than 3 when the pumping intensity was high.