Reassessing Fano Resonance for Broadband, High-Efficiency, and Ultrafast Terahertz Wave Switching.

Miniaturized ultrafast switchable optical components with high efficiency and broadband response are in high demand to the development of optical imaging, sensing, and high-speed communication. Sharp Fano-type resonance switched by active materials is one of the key concepts that underpins the control of light in metaoptics with high sensitivity. However, actuating such metasurfaces exhibits a long-standing trade-off between modulation depth and operational bandwidth. Here, the limitations are circumvented by theoretical analysis, numerical simulation, and experimental realization of an achromatic Fano metasurface so that a high contrast of tunability with ultrafast switching rate over a broad range of frequency is achieved. By developing the physics of inter-mode coupling, the Fano metasurface is designed according to a complete phase diagram derived from coupled mode theory. Unlike conventional Fano metasurfaces, the cross-polarized inter-metaatoms coupling is discovered as a superior ability of high-efficiency broadband achromatic polarization conversion. To prove the ultrasensitive nature, a metadevice is constructed by incorporating a thin amorphous Ge layer with a weak photoconductivity perturbation. Transmission modulation over broadband frequency range from 0.6 to 1.1 THz is thus successfully realized, featuring its merits of modulation depth over 90% and On-Off-On switching cycle less than 10 ps.

Light-Driven Spintronic Heterostructures for Coded Terahertz Emission.

The extraordinary proliferation of digital coding metasurfaces turns the real-time manipulation of electromagnetic (EM) waves into reality and promotes the programmable operation of multifunctional equipment. However, current studies are mainly involved in the modulation of the transmission process, and little attention has been given to the control of EM wave generation, especially in the terahertz (THz) band. Here, we conceptually propose and experimentally demonstrate coded terahertz emission, which integrates the efficient generation and control of THz waves across a wide frequency band. For validation, two types of stripe-patterned ferromagnetic heterostructures with opposite spin Hall angles were utilized as coding units. The two distinct states in each coding unit (with two polarization or phase states of 0° and 180°) can be characterized as "0" and "1" digits, which can be switched by manipulating the optical field distribution of the pump beam. Such an ability to realize simultaneous terahertz coding and terahertz emission is essential for meeting the increasingly demanding requirements of integration and miniaturization. Our work endows ferromagnetic heterostructures with controllable spatial characteristics and benefits their applications in wireless communications and holographic imaging.

Nonreciprocal Transport in a Bilayer of MnBi2Te4 and Pt.

MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested that the interaction of electrons and magnetism can be affected by the Mn-doped Bi2Te3 phase at the surface due to inevitable structural defects. Here, we report an observation of nonreciprocal transport, that is, current-direction-dependent resistance, in a bilayer composed of antiferromagnetic MBT and nonmagnetic Pt. The emergence of the nonreciprocal response below the Néel temperature confirms a correlation between nonreciprocity and intrinsic magnetism in the surface state of MBT. The angular dependence of the nonreciprocal transport indicates that nonreciprocal response originates from the asymmetry scattering of electrons at the surface of MBT mediated by magnon. Our work provides an insight into nonreciprocity arising from the correlation between magnetism and Dirac surface electrons in intrinsic magnetic topological insulators.

Ultraefficient Terahertz Emission Mediated by Shift-Current Photovoltaic Effect in Layered Gallium Telluride.

Generating terahertz waves using thin-layered materials holds great potential for the realization of integrated terahertz devices. However, previous studies have been limited by restricted radiation intensity and finite efficiency. Exploiting materials with higher efficiency for terahertz emission has attracted increasing interest worldwide. Herein, with visible-light excitation, a thin-layered GaTe film is demonstrated to be a promising emitter of terahertz radiation induced by the shift-current photovoltaic effect. Through theoretical calculations, a transient charge-transfer process resulting from the asymmetric structure of GaTe is shown to be the origin of an ultrafast shift current. Furthermore, it was found that the amplitude of the resulting terahertz signals can be manipulated by both the fluence of the pump laser and the orientation of the sample. Such high emission efficiency from the shift current indicates that the layered material (GaTe) is an excellent candidate for photovoltaics and terahertz emitters.

Bifunctional Spatiotemporal Metasurfaces for Incident Angle-Tunable and Ultrafast Optically Switchable Electromagnetically Induced Transparency.

Advances in tunable metamaterials/metasurfaces facilitates their utilization in novel optical components, and lead to many breakthroughs in light tailoring by giving birth to diverse spatiotemporal dynamics. In the ascendant field of terahertz (THz) photonics, the ultrafast modulation is the fundamental process of technological advancements in high-speed wireless communications, sensing, and imaging. However, the current research efforts have been mainly devoted to studies of single functionality under the control of one stimulus, which has plateaued in terms of innovative new features. Here, building on the incident angle-induced C2 symmetry breaking of split ring pairs, we experimentally demonstrate extremely versatile, ultrafast THz switching behaviors at continuously alterable resonant states. The direction-controlled resonance hybridization provides another excellent degree of routing freedom, owing to its robustness, simplicity, and wide tunability. By leveraging such virtues, single LC mode and EIT-like resonance under normal and oblique incidence conditions are both effectively switched-off by means of photon injection. Considering the ultrashort lifetime of free carriers in MoSe2 crystal, the corresponding transient dynamics show an ultrafast recovery time within 700 ps. The strategy proposed here is a viable pathway for multidimensional THz wave manipulation, which gears up a crucial step for diversified functionalities in deployable metaphotonic devices.

Fermi Velocity Reduction of Dirac Fermions around the Brillouin Zone Center in In2 Se3 -Bilayer Graphene Heterostructures.

Emergent phenomena such as unconventional superconductivity, Mott-like insulators, and the peculiar quantum Hall effect in graphene-based heterostructures are proposed to stem from the superlattice-induced renormalization of (moiré) Dirac fermions at the graphene Brillouin zone corners. Understanding the corresponding band structure commonly demands photoemission spectroscopy with both sub-meV resolution and large-momentum coverage, beyond the capability of the current state-of-the-art. Here the realization of moiré Dirac cones around the Brillouin zone center in monolayer In2 Se3 /bilayer graphene heterostructure is reported. The renormalization is evidenced by reduced Fermi velocity (≈23%) of the moiré Dirac cones and the reshaped Dirac point at the Γ point where they intersect. While there have been many theoretical predictions and much indirect experimental evidence, the findings here are the first direct observation of Fermi velocity reduction of the moiré Dirac cones. These features suggest strong In2 Se3 /graphene interlayer coupling, which is comparable with that in twisted bilayer graphene. The strategy expands the choice of materials in the heterostructure design and stimulates subsequent broad investigations of emergent physics at the sub-meV energy scale.

A novel Grey Verhulst model and its application in forecasting CO2 emissions.

Carbon dioxide emission is an important environmental issue, and it has also become an important reference factor for governments to formulate social and economic policies. The objective and accurate prediction of carbon dioxide emissions can provide reference and early warning for the implementation of the government's environmental strategy. The change of the original data of carbon dioxide emissions is S-type, but not saturated S-type. The grey Verhulst model is mainly used to describe the process with saturation state, which is suitable for modeling S-type data series. However, it is found that there are inherent errors and limitations in this model. In this paper, the grey action of the grey Verhulst model is improved, a new action Verhulst model is obtained, and its properties are studied. Finally, the new model is used to predict the carbon dioxide emissions of China and Russia, and ARIMA model is added for comparison. The results show that compared with the original Verhulst model, the simulation and prediction accuracy of the optimized Verhulst model are improved by more than 10%, and the ARIMA model underestimates the carbon dioxide emissions. From the result analysis, China and Russia need to formulate strong energy conservation and emission reduction policies, vigorously develop clean energy industry, and promote green production and lifestyle.

Enhanced Terahertz Radiation by Efficient Spin-to-Charge Conversion in Rashba-Mediated Dirac Surface States.

The enhancement of terahertz (THz) radiation is of extreme significance for the realization of the THz probe and imaging. However, present THz technologies are far from being enough to realize high-performance and room-temperature THz sources. Fortunately, topological insulators (TIs), with spin-momentum-locked Dirac surface states, are expected to exhibit a high terahertz emission efficiency. In this work, the novel concept of a Rashba-state-enhanced spintronic THz emitter is demonstrated on the basis of ferromagnet/heavy metal/topological insulator (FM/HM/TI) heterostructure. We find that the THz emission intensity changes as a function of HM interlayer thickness, and a 1.98 times higher intensity compared to that of FM/TI can be achieved when a meticulously designed thickness of the HM layer is inserted. The improvement of terahertz radiation is ascribed to the additive effect of Rashba splitting and topological surface states at the HM/TI interface. These results offer new possibilities for realizing spintronic THz emitters in TI-based magnetic heterostructures.

Quantum Transport Signatures of a Close Candidate for a Type II Nodal-Line Semimetal.

The nodal-line semimetal is a new type of topological state of matter in which the crossing of two energy bands forms a nodal loop. In the absence of spin-orbit coupling, Mg3Bi2 is predicted as a type II nodal-line semimetal, which may evolve to a topological insulator with a small energy gap of ∼35 meV in the presence of spin-orbit coupling. However, the transport evidence is still lacking. Here, we measure the magneto-transport in Mg3Bi2. At low temperatures, the magnetoconductivity exhibits a weak antilocalization behavior. We fit the experimental data with a magnetoconductivity formula for the weak antilocalization effect of three-dimensional nodal-line semimetals as well as the well-known Hikami-Larkin-Nagaoka formula for two-dimensional weak (anti)localization effects. By comparing the fitting results of these two theories, we demonstrate that the weak antilocalization in Mg3Bi2 is better described by the theory for nodal-line semimetals. Our work will inspire more explorations to use the new weak localization theory to identify a large spectrum of nodal-line semimetals.

Pump-Color Selective Control of Ultrafast All-Optical Switching Dynamics in Metaphotonic Devices.

Incorporating active materials into metamaterials is expected to yield exciting advancements in the unprecedented versatility of dynamically controlling optical properties, which sheds new light on the future optoelectronics. The exploration of emerging semiconductors into terahertz (THz) meta-atoms potentially allows achieving ultrafast nanodevices driven by various applications, such as biomedical sensing/imaging, ultrawide-band communications and security scanners. However, ultrafast optical switching of THz radiation is currently limited to a single level of tuning speed, which is a main hurdle to achieve multifunctionalities. Here, a hybrid metadevice which can realize the pump-wavelength controlled ultrafast switching response by the functionalization of double photoactive layers is demonstrated experimentally. A whole cycle of electromagnetically induced transparency switching with a half-recovery state changes from 0.78 ns to 8.8 ps as pump wavelength varies from near infrared to near ultraviolet regions. The observed pump-color selective switching speed changing from nanosecond scale to picosecond scale is ascribed to the wavelength-dependent penetration length of Ge and the contrasting defect states between noncrystalline Ge and epitaxial Si layers. It is believed that the schemes regarding pump-color controllable ultrafast switching behavior introduced here can inspire more innovations across the field of ultrafast photonics and can boost the reconfigurable metamaterial applications.

Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering.

Identification and control of topological phases in topological thin films offer great opportunities for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission spectroscopy, and ab initio calculations, we investigate the electronic structure evolution in (Bi1-xInx)2Se3 films (0 ≤ x ≤ 1) with thickness from 2 to 13 quintuple layers. By employing both thickness and In substitution as two independent "knobs" to control the gap change, we identify the evolution between several topological phases, i.e., dimensional crossover from a three-dimensional topological insulator to its two-dimensional counterpart with gapped surface state, and topological phase transition from a topological insulator to a normal semiconductor with increasing In concentration. Furthermore, by introducing In substitution, we experimentally demonstrated the trivial topological nature of Bi2Se3 thin films (below 6 quintuple layers) as two-dimensional gapped systems, consistent with our theoretical calculations. Our results provide not only a comprehensive phase diagram of (Bi1-xInx)2Se3 and a route to control its phase evolution but also a practical way to experimentally determine the topological properties of a gapped compound by a topological phase transition and band gap engineering.