Berry curvature contributions of kagome-lattice fragments in amorphous Fe-Sn thin films.

Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. Here, we demonstrate that the Berry curvature in the short-range crystalline order of kagome-lattice fragments effectively contributes to the anomalous electrical and magneto-thermoelectric properties in Fe-Sn amorphous films. The Fe-Sn films on glass substrates exhibit large anomalous Hall and Nernst effects comparable to those of the single crystals of topological semimetals Fe3Sn2 and Fe3Sn. With modelling, we reveal that the Berry curvature contribution in the amorphous state likely originates from randomly distributed kagome-lattice fragments. This microscopic interpretation sheds light on the topology of amorphous materials, which may lead to the realization of functional topological amorphous electronic devices.

A Noble-Metal-Free Spintronic System with Proximity-Enhanced Ferromagnetic Topological Surface State of FeSi above Room Temperature.

Strongly spin-orbit coupled states at metal interfaces, topological insulators, and 2D materials enable efficient electric control of spin states, offering great potential for spintronics. However, there are still materials challenges to overcome, including the integration into advanced silicon electronics and the scarce resources of constituent heavy elements of those materials. Through magneto-transport measurements and first-principles calculations, here robust spin-orbit coupling (SOC)-induced properties of a ferromagnetic topological surface state in FeSi and their controllability via hybridization with adjacent materials are demonstrated. In comparison to the case of its naturally oxidized surface, the ferromagnetic transition temperature is greatly increased beyond room temperature and the effective SOC strength is almost doubled at the surface in proximity to a wide-bandgap fluoride insulator. Those enhanced magnetic properties enable room-temperature magnetization switching, being applicable to spin-orbit torque based spintronic devices. Realization of strong SOC in the noble-metal-free silicon-based compound will accelerate spintronic applications.

Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi.

FeSi is a nonmagnetic narrow-gap insulator, exhibiting peculiar charge and spin dynamics beyond a simple band structure picture. Those unusual features have been attracting renewed attention from topological aspects. Although the surface conduction was demonstrated according to size-dependent resistivity in bulk crystals, its topological characteristics and consequent electromagnetic responses remain elusive. Here, we demonstrate an inherent surface ferromagnetic-metal state of FeSi thin films and its strong spin-orbit coupling (SOC) properties through multiple characterizations of two-dimensional conductance, magnetization, and spintronic functionality. Terminated covalent bonding orbitals constitute the polar surface state with momentum-dependent spin textures due to Rashba-type spin splitting, as corroborated by unidirectional magnetoresistance measurements and first-principles calculations. As a consequence of the spin-momentum locking, nonequilibrium spin accumulation causes magnetization switching. These surface properties are closely related to the Zak phase of the bulk band topology. Our findings propose another route to explore noble metal­free materials for SOC-based spin manipulation.

Nonreciprocal Transport in a Rashba Ferromagnet, Delafossite PdCoO2.

Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO2, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 ± 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nanospintronics and spin-orbitronics, beyond perovskite materials.

Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator.

Electrical manipulation of magnetization could be an essential function for energy-efficient spintronics technology. A magnetic topological insulator, possessing a magnetically gapped surface state with spin-polarized electrons, not only exhibits exotic topological phases relevant to the quantum anomalous Hall state but also enables the electrical control of its magnetic state at the surface. Here, we demonstrate efficient current-induced switching of the surface ferromagnetism in hetero-bilayers consisting of the topological insulator (Bi1-xSbx)2Te3 and the ferromagnetic insulator Cr2Ge2Te6, where the proximity-induced ferromagnetic surface states play two roles: efficient charge-to-spin current conversion and emergence of large anomalous Hall effect. The sign reversal of the surface ferromagnetic states with current injection is clearly observed, accompanying the nearly full magnetization reversal in the adjacent insulating Cr2Ge2Te6 layer of an optimal thickness range. The present results may facilitate an electrical control of dissipationless topological-current circuits.

Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet.

The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle, respectively, reach [Formula: see text] Ω-1 cm-1 and [Formula: see text]% in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally excited spin-clusters with scalar spin chirality, which is corroborated by the temperature-magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures.

Large non-reciprocal charge transport mediated by quantum anomalous Hall edge states.

The topological nature of the quantum anomalous Hall effect (QAHE) causes a dissipationless chiral edge current at the sample boundary1,2. Of fundamental interest is whether the chirality of the band structure manifests itself in charge transport properties. Here we report the observation of large non-reciprocal charge transport3 in a magnetic topological insulator, Cr-doped (Bi,Sb)2Te3. When the surface massive Dirac band is slightly carrier doped by a gate voltage, the edge state starts to dissipate and exhibits a current-direction-dependent resistance with a directional difference as large as 26%. The polarity of this diode effect depends on the magnetization direction as well as on the carrier type, electrons or holes. The correlation between the non-reciprocal resistance and the Hall resistance indicates that the non-reciprocity originates from the interplay between the chiral edge state and the Dirac surface state.

Large Anomalous Hall Effect in Topological Insulators with Proximitized Ferromagnetic Insulators.

We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of the ferromagnetic insulator Cr_{2}Ge_{2}Te_{6} and topological insulator (Bi,Sb)_{2}Te_{3}. Despite small magnetization in the (Bi,Sb)_{2}Te_{3} layer, the anomalous Hall conductivity reaches a large value of 0.2e^{2}/h in accord with a ferromagnetic response of the Cr_{2}Ge_{2}Te_{6}. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr_{2}Ge_{2}Te_{6} layer is effective and strong enough to open the sizable exchange gap in the surface state.

Nonreciprocal charge transport at topological insulator/superconductor interface.

Topological superconductor is attracting growing interest for its potential application to topological quantum computation. The superconducting proximity effect on the topological insulator surface state is one promising way to yield topological superconductivity. The superconductivity realized at the interface between Bi2Te3 and non-superconductor FeTe is one such candidate. Here, to detect the mutual interaction between superconductivity and topological surface state, we investigate nonreciprocal transport; i.e., current-direction dependent resistance, which is sensitive to the broken inversion symmetry of the electronic state. The largely enhanced nonreciprocal phenomenon is detected in the Bi2Te3/FeTe heterostructure associated with the superconducting transition. The emergent nonreciprocal signal at low magnetic fields is attributed to the current-induced modulation of supercurrent density under the in-plane magnetic fields due to the spin-momentum locking. The angular dependence of the signal reveals the symmetry of superconductivity and indicates the existence of another mechanism of nonreciprocal transport at high fields.

Giant thermoelectric power factor in ultrathin FeSe superconductor.

The thermoelectric effect is attracting a renewed interest as a concept for energy harvesting technologies. Nanomaterials have been considered a key to realize efficient thermoelectric conversions owing to the low dimensional charge and phonon transports. In this regard, recently emerging two-dimensional materials could be promising candidates with novel thermoelectric functionalities. Here we report that FeSe ultrathin films, a high-Tc superconductor (Tc; superconducting transition temperature), exhibit superior thermoelectric responses. With decreasing thickness d, the electrical conductivity increases accompanying the emergence of high-Tc superconductivity; unexpectedly, the Seebeck coefficient α shows a concomitant increase as a result of the appearance of two-dimensional natures. When d is reduced down to ~1 nm, the thermoelectric power factor at 50 K and room temperature reach unprecedented values as high as 13,000 and 260 µW cm-1 K-2, respectively. The large thermoelectric effect in high Tc superconductors indicates the high potential of two-dimensional layered materials towards multi-functionalization.

A cascade of phase transitions in an orbitally mixed half-filled Landau level.

Half-filled Landau levels host an emergent Fermi liquid that displays instability toward pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. We explore the ground states at filling factor ν = 5/2 in ZnO-based two-dimensional electron systems through a forced intersection of opposing spin branches of Landau levels taking quantum numbers N = 1 and 0. We reveal a cascade of phases with distinct magnetotransport features including a gapped phase polarized in the N = 1 level and a compressible phase in N = 0, along with an unexpected Fermi liquid, a second gapped, and a strongly anisotropic nematic-like phase at intermediate polarizations when the levels are near degeneracy. The phase diagram is produced by analyzing the proximity of the intersecting levels and highlights the excellent reproducibility and controllability that ZnO offers for exploring exotic fractionalized electronic phases.

Fermi-level tuning of the Dirac surface state in (Bi1-x Sb x )2Se3 thin films.

We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-x Sb x )2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-x Sb x )2Se3 film with x = 0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x = 0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63 ⩽ x ⩽ 0.75. These features suggest that Fermi-level tunable (Bi1-x Sb x )2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.

Tailoring tricolor structure of magnetic topological insulator for robust axion insulator.

Exploration of novel electromagnetic phenomena is a subject of great interest in topological quantum materials. One of the unprecedented effects to be experimentally verified is the topological magnetoelectric (TME) effect originating from an unusual coupling of electric and magnetic fields in materials. A magnetic heterostructure of topological insulator (TI) hosts such exotic magnetoelectric coupling and can be expected to realize the TME effect as an axion insulator. We designed a magnetic TI with a tricolor structure where a nonmagnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagnetic Cr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3. Accompanied by the quantum anomalous Hall (QAH) effect, we observe zero Hall conductivity plateaus, which are a hallmark of the axion insulator state, in a wide range of magnetic fields between the coercive fields of Cr- and V-doped layers. The resistance of the axion insulator state reaches as high as 109 ohms, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% upon the transition from the QAH state. The tricolor structure of the TI may not only be an ideal arena for the topologically distinct phenomena but can also provide magnetoresistive applications for advancing dissipation-less topological electronics.

Current-Driven Instability of the Quantum Anomalous Hall Effect in Ferromagnetic Topological Insulators.

The instability of the quantum anomalous Hall (QAH) effect has been studied as a function of the electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect is roughly proportional to the Hall-bar width, indicating that the Hall electric field is relevant to the breakdown. We also find that electron transport is dominated by variable range hopping (VRH) at low temperatures. Combining the current and temperature dependences of the conductivity in the VRH regime, the localization length of the QAH state is evaluated to be about 5 µm. The long localization length suggests a marginally insulating nature of the QAH state due to a large number of in-gap states.

Co thin films deposited directly on ZnO polar surfaces.

A ferromagnetic (FM)-metal/oxide stack is the key structure determining the performance of spintronic devices. However, the effect of the electronic polarity of the oxide on the magnetic properties of the adjacent FM-metal has not been investigated previously. Here, we report the magnetic and structural properties of Co ultra-thin films sputter deposited directly on the Zn- and O-polar surfaces of ZnO substrates. The magnetic anisotropy and Curie temperature exhibit dramatic polarity-dependent differences for films on these surfaces. Structural analyses reveal that the heterointerface of the Co/O-polar surface is rather diffusive, whereas that of the Co/Zn-polar surface is atomically flat. These results suggest that the surface polarity plays a key role in determining the properties of the film. This novel FM-metal/polar-oxide system is expected to add new functionality to spintronic devices and provide an ideal basis for investigating the effect of a built-in electric field on the magnetism in a metallic monolayer.

Terahertz spectroscopy on Faraday and Kerr rotations in a quantum anomalous Hall state.

Electrodynamic responses from three-dimensional topological insulators are characterized by the universal magnetoelectric term constituent of the Lagrangian formalism. The quantized magnetoelectric coupling, which is generally referred to as topological magnetoelectric effect, has been predicted to induce exotic phenomena including the universal low-energy magneto-optical effects. Here we report the experimental indication of the topological magnetoelectric effect, which is exemplified by magneto-optical Faraday and Kerr rotations in the quantum anomalous Hall states of magnetic topological insulator surfaces by terahertz magneto-optics. The universal relation composed of the observed Faraday and Kerr rotation angles but not of any material parameters (for example, dielectric constant and magnetic susceptibility) well exhibits the trajectory towards the fine structure constant in the quantized limit.

Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions.

For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm(2)/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.

MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 10(6) cm(2)/Vs.

The inherently complex chemical and crystallographic nature of oxide materials has suppressed the purities achievable in laboratory environments, obscuring the rich physical degrees of freedom these systems host. In this manuscript we provide a systematic approach to defect identification and management in oxide molecular beam epitaxy grown MgZnO/ZnO heterostructures which host two-dimensional electron systems. We achieve samples displaying electron mobilities in excess of 1 × 10(6) cm(2)/Vs. This data set for the MgZnO/ZnO system firmly establishes that the crystalline quality has become comparable to traditional semiconductor materials.

Electrostatic and electrochemical nature of liquid-gated electric-double-layer transistors based on oxide semiconductors.

The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics because of the large interfacial capacitance coupling and its ability for high-density charge accumulation. Much effort has recently been devoted to the fundamental understanding and practical applications of such highly charged EDL interfaces. However, the intrinsic nature of the EDL charging, whether it is electrostatics or electrochemistry, and how to distinguish them are far from clear. Here, by combining electrical transport measurements with electrochemical impedance spectroscopy (EIS), we studied the charging mechanisms of highly charged EDL interfaces between an ionic liquid and oxide semiconductor, ZnO. The direct measure for mobile carriers from the Hall effect agreed well with that from the capacitance-voltage integration at 1 Hz, implying that the pseudocapacitance does not contribute to carrier transport at EDL interfaces. The temperature-frequency mapping of EIS was further demonstrated as a "phase diagram" to distinguish the electrostatic or electrochemical nature of such highly charged EDL interfaces with densities of up to 8 × 10(14) cm(-2), providing a guideline for electric-field-induced electronic phenomena and a simple method for distinguishing electrostatic and electrochemical charging in EDLTs not only based on a specific oxide semiconductor, ZnO, but also commonly applicable to all types of EDL interfaces with extremely high-density carrier accumulation.