Cherenkov-phase-matched nonlinear optical detection and generation of terahertz radiation via GaAs with metal-coating.

Terahertz (THz) wave detection and emission via Cherenkov-phase-matched nonlinear optical effects at 1.55-µm optical wavelength were demonstrated using a GaAs with metal-coating (M-G-M) and bare GaAs as a reference sample in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). The metal-coated GaAs is superior to the bare wafer both as a THz electro-optic detector and as an emitter. Significant improvements in the detection and emission efficiency were obtained by utilizing a metal-coating due to better confinement and lower loss of the THz waves propagating in the M-G-M compared with bare GaAs.

Development of Resistance-Based pH Sensor Using Zinc Oxide Nanorods.

The resistance-based pH sensing capability of ZnO nanorods was presented in this study. Interdigitated finger structures of nickel/gold (Ni/Au) electrodes were fabricated on the substrates prior to the sensing material. The effect of varying electrode widths was also considered. Zinc oxide (ZnO) film, as seed layer, was deposited via spray pyrolysis, and zinc oxide nanorods (ZnO-NRs) were grown via low temperature chemical bath deposition. Resistance measurements have shown plausible difference in varying pH of a test solution. The sensor was found reasonably more appreciable in sensing acidic solutions. The electrode widths were also found to relay substantial consequence in the resistance-based sensor. The least electrode-width design has shown a significant increase in the sensitivity of the sensor, with higher initial resistance and greater range of response.

Near-Infrared and Ultraviolet Photodetector Based on p-n Homojunction of Undoped and Phosphorus-Doped Zinc Oxide Nanorods.

The application of a p-n homojunction based on zinc oxide (ZnO) nanorods as photodetector is presented in this study. The homojunctions were grown via chemical bath deposition for 6, 9, and 12 hours per layer of the junction. X-ray diffraction and scanning electron micrographs confirmed the material composition, structure, and morphology of the grown device. Current-voltage (I-V) measurements were done to verify the diode-like behavior of the ZnO p-n homojunction. Upon illumination, it is observed through I-V curves and through photocurrent measurements that the fabricated device is sensitive to ultraviolet and near-infrared light, respectively. The peak sensitivities in the photocurrent spectrum were found tunable based on the observed red shift as the length of the nanorods is increased. In addition to this, upon applying a positive voltage bias, the response of the device was observed to enhance by 5 orders of magnitude. In general, the device was successfully proven to have a great potential for applications in photodetection.