First example of engineered ß-cyclodextrinylated MEMS devices for volatile pheromone sensing of olive fruit pests.

Olive oil is more preferred than other vegetable oils because of the increasing health concern among people throughout the world. The major hindrance in large-scale production of olive oil is olive fruit pests which cause serious economic damage to the olive orchards. This requires careful monitoring and timely application of suitable remedies before pest infestation. Herein we demonstrate efficacious utilization of covalently functionalized ß-cyclodextrinylated MEMS devices for selective and sensitive detection of female sex pheromone of olive fruit pest, Bactocera oleae. Two of the MEMS devices, silicon dioxide surface-micromachined cantilever arrays and zinc oxide surface-microfabricated interdigitated circuits, have been used to selectively capture the major pheromone component, 1,7-dioxaspiro[5,5]undecane. The non-covalent capture of olive pheromones inside the ß-cyclodextrin cavity leads to the reduction of resonant frequency of the cantilevers, whereas an increase in resistance has been found in case of zinc oxide derived MEMS devices. Sensitivity of the MEMS devices towards the olive pheromone was found to be directly correlated with the increasing availability of ß-cyclodextrin moieties over the surface of the devices and thus the detection limit of the devices has been achieved to a value as low as 0.297 ppq of the olive pheromone when the devices were functionalized with one of the standardized protocols. Overall, the reversible usability and potential capability of the suitably functionalized MEMS devices to selectively detect the presence of female sex pheromone of olive fruit fly before the onset of pest infestation in an orchard makes the technology quite attractive for viable commercial application.

Low-cost VO2(M1) thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture for IR photodetection.

We report detailed structural, electrical transport and IR photoresponse properties of large area VO2(M1) thin films deposited by a simple cost-effective two-step technique. Phase purity was confirmed by XRD and Raman spectroscopy studies. The high quality of the films was further established by a phase change from low temperature monoclinic phase to high temperature tetragonal rutile phase at 68 °C from temperature dependent Raman studies. An optical band gap of 0.75 eV was estimated from UV-visible spectroscopy. FTIR studies showed 60% reflectance change at λ = 7.7 µm from low reflectivity at low temperature to high reflectivity at high temperature in a transition temperature of 68 °C. Electrical characterization showed a first order transition of the films with a resistance change of four orders of magnitude and TCR of -3.3% K-1 at 30 °C. Hall-effect measurements revealed the n-type nature of VO2 thin films with room temperature Hall mobility, µ e of 0.097 cm2 V-1 s-1, conductivity, σ of 0.102 Ω-1 cm-1 and carrier concentration, n e = 5.36 × 1017 cm-3. In addition, we fabricated a high photoresponsive IR photodetector based on VO2(M1) thin films with excellent stability and reproducibility in ambient conditions using a low-cost method. The VO2(M1) photodetector exhibited high sensitivity, responsivity, quantum efficiency, detectivity and photoconductive gain of 5.18%, 1.54 mA W-1, 0.18%, 3.53 × 1010 jones and 9.99 × 103 respectively upon illumination with a 1064 nm laser at a power density of 200 mW cm-2 and 10 V bias voltage at room temperature.

High contrast switchability of VO2 based metamaterial absorbers with ITO ground plane.

A metamaterial consisting of an array of gold micro-disks, separated from a ground plane of indium tin oxide (ITO) by a thin film of vanadium dioxide (VO2), behaves as a perfect absorber at infrared (IR) frequencies at room temperature. This metamaterial, which is transparent to visible light, can be switched to a highly reflecting state for IR light by heating the metamaterial to temperatures larger than the metal-insulator phase transition temperature 68°C of VO2. For a disk diameter of 1.5 µm and VO2 film thickness of 320 nm, two absorption bands are obtained: one, that arises from the metamaterial resonance; and a second peak that arises principally from a Fabry-Pérot resonance. A large change (>78%) occurs in the reflectivity between the low and high temperature phases. IR emittance of the metamaterial was measured with IR cameras and shown to be switchable to result in low emittance at high temperature. Optical readout of the state of VO2 within the metamaterial is demonstrated.