Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature.

Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F- ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10-2 Ω·cm to (4.64 ± 0.01) × 10-3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm-3 (SnO2) and (1.63 ± 0.03) × 1020 cm-3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of -234 ± 3 µV/K (SnO2) and -204 ± 3 µV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (µW/m·K2) to ~900 (µW/m·K2) for the SnO2 and FTO film, respectively.

Improved Memory Effect of ZnO Nanorods Embedded in an Insulating Polymethylmethacrylate Layer.

Fabrication and characterization of memory devices using ZnO nanorod layer grown by chemical-bath method is reported. The fabricated memory device was found exhibit electrical bistability and nonvolatile memory phenomenon. An additional Polymethylmethacrylate (PMMA) polymer layer coated on ITO substrate prior to nanorod deposition has been found improve the LRS/HRS ratio of the device. The current-voltage characteristics of the memory devices are discussed in terms of formation and rupture of conductive filaments. The devices have shown consistent electrical bistable behavior even for 10(5) resistance-switching cycles. This hybrid ITO/PMMA-ZnO NRs/Al device has potential applications in the field of bistable random access memories.

Role of solution pH on the microstructural properties of spin coated cobalt oxide thin films.

Cobalt Oxide (Co3o4) thin films have been successfully coated onto glass substrates at various solution pH by sol-gel spin coating technique. The film thickness was estimated using weight gain method and it revealed that the film thickness increased with solution pH values. The prepared film structural, morphological, optical and electrical properties were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis-NIR spectrophotometer and Vander Pau method, respectively. The structure of the films were found to be face centered cubic with preferential orientation along (311) plane. X-ray line profile analysis was used to evaluate the micro structural parameters such as crystallite size, micro strain, dislocation density and stacking fault probability. The crystallite size values are increased with increase of solution pH values and maximum value of crystallite is estimated at 40.8 nm at solution pH 8 +/- 0.1. Morphological results showed that the pH of the solution has a marked effect on morphology of the Co3O4 thin films. The optical studies revealed that the band gap can be tailored between 2.16 to 2.31 eV by altering pH. The thin film formed at a solution pH 7 is found to have a low resistivity and high mobility. The electrical resistivity (p), carrier concentration (n) and mobility (micro) values are 0.1 x 10(3) omega x cm, 8.9 cm2 gammas(-1) and 6.6 x 10(14) cm(-3), respectively for Co3O4 thin film prepared at solution pH 7 +/- 0.1. EDAX studies showed that the cobalt content increased and the oxygen content decreased with increase of pH.

High-performance memory device using graphene oxide flakes sandwiched polymethylmethacrylate layers.

Organic bistable devices (OBDs) using graphene oxide (GO) flakes sandwiched polymethylmethacrylate (PMMA) films were fabricated. These devices exhibited two accessible conducting states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state. The devices can be switched to ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. Detailed I-V measurements have shown that in ITO/PMMA/GO/PMMA/Al sandwiches the resistive switching originates from the formation and rupture of conducting filaments. The ON/OFF ratio of the OBDs was approximately 5 x 10(3), reproducibility of more than 10(5) cycles, and retention time of 10(4) s. These properties show that the device is promising for high-density, low-cost memory application.

Variation of microstructural and optical properties in SILAR grown ZnO thin films by thermal treatment.

The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD. The studies revealed that films were exhibiting preferential orientation along (002) plane. The other structural parameters like the crystallite size (D), micro strain (epsilon), dislocation density (delta) and stacking fault (alpha) of as-deposited and annealed ZnO films were evaluated and reported. The optical properties were also studied and the band gap of the ZnO thins films varied from 3.27 to 3.04 eV with the annealing temperature. SEM studies revealed that the hexagonal shaped grains with uniformly distributed morphology in annealed ZnO thin films. It has been envisaged using EDX analysis that the near stoichiometric composition of the film can be attained by thermal treatment during which microstructural changes do occur.