Two-Dimensional Electron-Hole Plasma in Colloidal Quantum Shells Enables Integrated Lasing Continuously Tunable in the Red Spectrum.

Combining integrated optical platforms with solution-processable materials offers a clear path toward miniaturized and robust light sources, including lasers. A limiting aspect for red-emitting materials remains the drop in efficiency at high excitation density due to non-radiative quenching pathways, such as Auger recombination. Next to this, lasers based on such materials remain ill characterized, leaving questions about their ultimate performance. Here, we show that colloidal quantum shells (QSs) offer a viable solution for a processable material platform to circumvent these issues. We first show that optical gain in QSs is mediated by a 2D plasma state of unbound electron-hole pairs, opposed to bound excitons, which gives rise to broad-band and sizable gain across the full red spectrum with record gain lifetimes and a low threshold. Moreover, at high excitation density, the emission efficiency of the plasma state does not quench, a feat we can attribute to an increased radiative recombination rate. Finally, QSs are integrated on a silicon nitride platform, enabling high spectral contrast, surface emitting, and TE-polarized lasers with ultranarrow beam divergence across the entire red spectrum from a small surface area. Our results indicate QS materials are an excellent materials platform to realize highly performant and compact on-chip light sources.

Decoding Excimer Formation in Covalent-Organic Frameworks Induced by Morphology and Ring Torsion.

A thorough and quantitative understanding of the fate of excitons in covalent-organic frameworks (COFs) after photoexcitation is essential for their augmented optoelectronic and photocatalytic applications via precise structure tuning. The synthesis of a library of COFs having identical chemical backbone with impeded conjugation, but varied morphology and surface topography to study the effect of these physical properties on the photophysics of the materials is herein reported. The variation of crystallite size and surface topography substantified different aggregation pattern in the COFs, which leads to disparities in their photoexcitation and relaxation properties. Depending on aggregation, an inverse correlation between bulk luminescence decay time and exciton binding energy of the materials is perceived. Further transient absorption spectroscopic analysis confirms the presence of highly localized, immobile, Frenkel excitons (of diameter 0.3-0.5 nm) via an absence of annihilation at high density, most likely induced by structural torsion of the COF skeletons, which in turn preferentially relaxes via long-lived (nanosecond to microsecond) excimer formation (in femtosecond scale) over direct emission. These insights underpin the importance of structural and topological design of COFs for their targeted use in photocatalysis.

Short-Wave Infrared Colloidal QD Photodetector with Nanosecond Response Times Enabled by Ultrathin Absorber Layers.

Ultrafast short-wavelength infrared (SWIR) photodetection is of great interest for emerging automated vision and spatial mapping technologies. Colloidal quantum dots (QDs) stand out for SWIR photodetection compared to epitaxial (In,Ga)As or (Hg,Cd)Te semiconductors by their combining a size-tunable bandgap and a suitability for cost-effective, solution-based processing. However, achieving ultrafast, nanosecond-level response time has remained an outstanding challenge for QD-based SWIR photodiodes (QDPDs). Here, record 4 ns response time in PbS-based QDPDs that operate at SWIR wavelengths is reported, a result reaching the requirement of SWIR light detection and ranging based on colloidal QDs. These ultrafast QDPDs combine a thin active layer to reduce the carrier transport time and a small area to inhibit slow capacitive discharging. By implementing a concentration gradient ligand exchange method, high-quality p-n junctions are fabricated in these ultrathin QDPDs. Moreover, these ultrathin QDPDs attain an external quantum efficiency of 42% at 1330 nm, due to a 2.5-fold enhanced light absorption through the formation of a Fabry-Perot cavity within the QDPD and the highly efficient extraction (98%) of photogenerated charge carriers. Based on these results, it is estimated that a further increase of the charge-carrier mobility can lead to PbS QDPDs with sub-nanosecond response time.

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides.

Colloidal quantum dots (QDs) have become a versatile optoelectronic material for emitting and detecting light that can overcome the limitations of a range of electronic and photonic technology platforms. Photonic integrated circuits (PICs), for example, face the persistent challenge of combining active materials with passive circuitry ideally suited for guiding light. Here, we demonstrate the integration of photodiodes (PDs) based on PbS QDs on silicon nitride waveguides (WG). Analyzing planar QDPDs first, we argue that the main limitation WG-coupled QDPDs face is detector saturation induced by the high optical power density of the guided light. Using the cladding thickness and waveguide width as design parameters, we mitigate this issue, and we demonstrate WG-QDPDs with an external quantum efficiency of 67.5% at 1275 nm that exhibit a linear photoresponse for input powers up to 400 nW. In the next step, we demonstrate a compact infrared spectrometer by integrating these WG-QDPDs on the output channels of an arrayed waveguide grating demultiplexer. This work provides a path toward a low-cost PD solution for PICs, which are attractive for large-scale production.

High-efficiency dual single layer graphene modulator integrated on slot waveguides.

This paper presents an experimental and theoretical investigation of a graphene-integrated electro-absorption modulator (EAM) based on a slot waveguide. Due to the enhanced light-matter interaction of graphene, the device exhibits an impressive modulation efficiency (0.038 dBµm-1V-1) and bandwidth (≈ 16 GHz). Starting from these results, we carried out an extensive design study, focusing on three crucial design parameters and exploring the associated trade-offs in insertion loss, extinction ratio and bandwidth. The simulation results offer valuable insights into the influence of each design parameter, reaffirming that our slot waveguide platform holds great promise for realizing a high-performance EAM balancing optical and electrical performance. It is important to note that the slot waveguide was defined through standard deep ultraviolet (DUV) lithography, allowing seamless integration into high-density systems.

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters.

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves.

Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a V π L ∼ 3.35 V·cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V π L ∼ 3.60 V·cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration.

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity.

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous, the dark current is lower than 7 nA, which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA W-1 is obtained. Remarkably, the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection, enabling an increased responsivity of 709 mA W-1. Besides, the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a wide spectral range, as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current, high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon, lithium niobate, polymer, etc.

Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection.

Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused on telecommunication wavelengths. Yet, to unlock the full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential to serve applications such as biosensing, imaging, and quantum photonics. Here, we report the first, to the best of our knowledge, microtransfer printed Si p-i-n photodiodes on a commercially available SiN platform to target wavelengths <850 nm. A novel heterogeneous integration process flow was developed to offer a high microtransfer printing yield. Moreover, these devices are fabricated with CMOS compatible and wafer-scale technology.

Broadband Optical Phase Modulation by Colloidal CdSe Quantum Wells.

Two-dimensional (2D) semiconductors are primed to realize a variety of photonic devices that rely on the transient properties of photogenerated charges, yet little is known on the change of the refractive index. The associated optical phase changes can be beneficial or undesired depending on the application, but require proper quantification. Measuring optical phase modulation of dilute 2D materials is, however, not trivial with common methods. Here, we demonstrate that 2D colloidal CdSe quantum wells, a useful model system, can modulate the phase of light across a broad spectrum using a femtosecond interferometry method. Next, we develop a toolbox to calculate the time-dependent refractive index of colloidal 2D materials from widely available transient absorption experiments using a modified effective medium algorithm. Our results show that the excitonic features of 2D materials result in broadband, ultrafast, and sizable phase modulation, even extending to the near infrared because of intraband transitions.

Localization-limited exciton oscillator strength in colloidal CdSe nanoplatelets revealed by the optically induced stark effect.

2D materials are considered for applications that require strong light-matter interaction because of the apparently giant oscillator strength of the exciton transitions in the absorbance spectrum. Nevertheless, the effective oscillator strengths of these transitions have been scarcely reported, nor is there a consistent interpretation of the obtained values. Here, we analyse the transition dipole moment and the ensuing oscillator strength of the exciton transition in 2D CdSe nanoplatelets by means of the optically induced Stark effect (OSE). Intriguingly, we find that the exciton absorption line reacts to a high intensity optical field as a transition with an oscillator strength FStark that is 50 times smaller than expected based on the linear absorption coefficient. We propose that the pronounced exciton absorption line should be seen as the sum of multiple, low oscillator strength transitions, rather than a single high oscillator strength one, a feat we assign to strong exciton center-of-mass localization. Within the quantum mechanical description of excitons, this 50-fold difference between both oscillator strengths corresponds to the ratio between the coherence area of the exciton's center of mass and the total area, which yields a coherence area of a mere 6.1 nm2. Since we find that the coherence area increases with reducing temperature, we conclude that thermal effects, related to lattice vibrations, contribute to exciton localization. In further support of this localization model, we show that FStark is independent of the nanoplatelet area, correctly predicts the radiative lifetime, and lines up for strongly confined quantum dot systems.

Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer.

We present a loss-coupled distributed feedback microlaser, monolithically grown on a standard 300-mm Si wafer using nano-ridge engineering. The cavity is formed by integrating a metallic grating on top of the nano-ridge. This allows forming a laser cavity without etching the III-V material, avoiding damaged interfaces and the associated carrier loss. Simulations, supported by experimental characterisation of the modal gain of the nano-ridge devices, predict an optimal duty cycle for the grating of ~0.4, providing a good trade-off between coupling strength and cavity loss for the lasing mode. The model was experimentally verified by characterising the lasing threshold and external efficiency of devices exhibiting gratings with varying duty cycle. The high modal gain and low threshold obtained prove the excellent quality of the epitaxial material. Furthermore, the low loss metal grating might provide a future route to electrical injection and efficient heat dissipation of these nanoscale devices.

5 × 25 Gbit/s WDM transmitters based on passivated graphene-silicon electro-absorption modulators.

Today, one of the key challenges of graphene devices is establishing fabrication processes that can ensure performance stability and repeatability and that can eventually enable production in high volumes. In this paper, we use up-scalable fabrication processes to demonstrate three five-channel wavelength-division multiplexing (WDM) transmitters, each based on five graphene-silicon electro-absorption modulators. A passivation-first approach is used to encapsulate graphene, which results in hysteresis-free and uniform performance across the five channels of each WDM transmitter, for a total of 15 modulators. Open-eye diagrams are obtained at 25 Gb/s using $ 2.5\;{{\rm V}_{{\rm pp}}} $2.5Vpp, thus demonstrating potential for multi-channel data transmission at ${5}\times {25}\;{\rm Gb/s}$5×25Gb/s on each of the three WDM transmitters.

Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform.

While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interfacing nanometer-scale III-V lasers grown on SOI with other silicon photonics components. The starting point is a directional coupler, which achieves 100% coupling efficiency from the III-V lasing mode to the Si waveguide TE-like ground mode. To improve the robustness and manufacturability of the coupler, a linear-tapered adiabatic coupler is designed, which is less sensitive to variations and still reaches a coupling efficiency of around 98%. Nevertheless, it has a relatively large footprint and exhibits some undesired residual coupling to TM-like modes. To improve this, a more advanced adiabatic coupler whose geometry is varied along its propagation length is designed and manages to reach ∼100% coupling and decoupling within a length of 200 µm. The proposed couplers are designed for the particular case of III-V nano-ridge lasers monolithically grown using aspect-ratio-trapping (ART) together with nano-ridge engineering (NRE) but are believed to be compatible with other epitaxial III-V/Si integration platforms recently proposed. In this way, the presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform.

Ultrafast carrier dynamics in colloidal WS2 nanosheets obtained through a hot injection synthesis.

In recent years, hot injection synthesis has emerged as a promising route for the production of nanostructured transition metal dichalcogenides, in large due to its better control over the crystallinity and monodispersity compared to other solution based methods. Understanding the photophysics of excitons in the thus obtained colloidal nanosheets is of great importance to explore their potential for applications in optoelectronics. Here, we study the carrier dynamics in these few-layer colloidal WS2 nanosheets by use of broadband transient absorption spectroscopy. The dynamics of both the bleach, linewidth broadening and energy shift across the entire visible and near-infrared spectrum, allows us to identify subpicosecond electron trapping as the main carrier loss channel. A more quantitative analysis shows that the intrinsic properties of colloidally synthesized nanosheets are on par with other synthesis methods, paving the way for this method to produce high quality nanosheets.

Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip.

Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.

Integration of Colloidal PbS/CdS Quantum Dots with Plasmonic Antennas and Superconducting Detectors on a Silicon Nitride Photonic Platform.

Single-photon sources and detectors are indispensable building blocks for integrated quantum photonics, a research field that is seeing ever increasing interest for numerous applications. In this work, we implemented essential components for a quantum key distribution transceiver on a single photonic chip. Plasmonic antennas on top of silicon nitride waveguides provide Purcell enhancement with a concurrent increase of the count rate, speeding up the microsecond radiative lifetime of IR-emitting colloidal PbS/CdS quantum dots (QDs). The use of low-fluorescence silicon nitride, with a waveguide loss smaller than 1 dB/cm, made it possible to implement high extinction ratio optical filters and low insertion loss spectrometers. Waveguide-coupled superconducting nanowire single-photon detectors allow for low time-jitter single-photon detection. To showcase the performance of the components, we demonstrate on-chip lifetime spectroscopy of PbS/CdS QDs. The method developed in this paper is predicted to scale down to single QDs, and newly developed emitters can be readily integrated on the chip-based platform.

1.3 µm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding.

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 µm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100°C is obtained. Threshold current densities as low as 205 A/cm2 were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.

Nanophotonic Pockels modulators on a silicon nitride platform.

Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (α ≈ 1 dB cm-1). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.

Integration of etched facet, electrically pumped, C-band Fabry-Pérot lasers on a silicon photonic integrated circuit by transfer printing.

We report on the heterogeneous integration of electrically pumped InP Fabry-Pérot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the heterogeneous integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Pérot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate. The laser facet is successfully butt-coupled to the photonic circuit using a silicon inverse taper based spot size converter. Milliwatt optical output power coupled to the Si waveguide circuit at 100 mA is demonstrated.