Intriguing type-II g-GeC/AlN bilayer heterostructure for photocatalytic water decomposition and hydrogen production.

Adapting two-dimensional (2D) van der Walls bilayer heterostructure is an efficient technique for realizing fascinating properties and playing a key role in solar energy-driven water decomposition schemes. By means of first-principles calculations, this study reveals the intriguing potential of a novel 2D van der Walls hetero-bilayer consisting of GeC and AlN layer in the photocatalytic water splitting method to generate hydrogen. The GeC/AlN heterostructure has an appropriate band gap of 2.05 eV, wherein the band edges are in proper energetic positions to provoke the water redox reaction to generate hydrogen and oxygen. The type-II band alignment of the bilayer facilitates the real-space spontaneous separation of the photogenerated electrons and holes in the different layers, improving the photocatalytic activity significantly. Analysis of the electrostatic potential and the charge density difference unravels the build-up of an inherent electric field at the interface, preventing electron-hole recombination. The ample absorption spectrum of the bilayer from the ultra-violet to the near-infrared region, reaching up to 8.71 × 105/cm, combined with the resiliency to the biaxial strain, points out the excellent photocatalytic performance of the bilayer heterostructure. On top of rendering useful information on the key features of the GeC/AlN hetero-bilayer, the study offers informative details on the experimental design of the van der Walls bilayer heterostructure for solar-to-hydrogen conversion applications.

All-optical AZO-based modulator topped with Si metasurfaces.

All-optical communication systems are under continuous development to address different core elements of inconvenience. Here, we numerically investigate an all-optical modulator, realizing a highly efficient modulation depth of 22 dB and a low insertion loss of 0.32 dB. The tunable optical element of the proposed modulator is a layer of Al-doped Zinc Oxide (AZO), also known as an epsilon-near-zero transparent conductive oxide. Sandwiching the AZO layer between a carefully designed distributed Bragg reflector and a dielectric metasurface-i.e., composed of a two-dimensional periodic array of cubic Si-provides a guided-mode resonance at the OFF state of the modulator, preventing the incident signal reflection at λ = 1310 nm. We demonstrate the required pump fluence for switching between the ON/OFF states of the designed modulator is about a few milli-Joules per cm2. The unique properties of the AZO layer, along with the engineered dielectric metasurface above it, change the reflection from 1 to 93%, helping design better experimental configurations for the next-generation all-optical communication systems.